177 - 184 |
Surface reaction probabilities of radicals correlated from film thickness contours in silane chemical vapor deposition Tsai DS, Chang TC, Hsin WC, Hamamura H, Shimogaki Y |
185 - 191 |
Titanium(IV) oxide thin films obtained by a two-step soft-solution method Peiro AM, Vigil E, Peral J, Domingo C, Domenech X, Ayllon JA |
192 - 197 |
Sol-gel deposition and characterization of In6WO12 thin films Dabney WS, Antolino NE, Luisi BS, Richard AP, Edwards DD |
198 - 202 |
Characteristics of transparent and conductive undoped ZnO thin films obtained by chemical spray using zinc pentanedionate Olvera AD, Maldonado A, Asomoza R, Tirado-Guerra S |
203 - 210 |
Influence of oxygen plasma treatment on the microstructure of SnOx thin films Jiang JC, Lian K, Meletis EI |
211 - 218 |
Spontaneous desorption time of flight mass spectrometry for the analysis of chemical reactions in thin solid films of a few monolayers and up to the micrometer regime Kramer S, Wohlfart P, Sterthaus R, Einsiedel H, Vydra J, Mittler S |
219 - 224 |
Patterning of nanometer-scale silicide structures on silicon by'direct writing focus ion-beam implantation' Mitan MM, Pivin DP, Alford TL, Mayer JW |
225 - 228 |
Microstructural characterization of Fe-N thin films Zhan Q, Yu R, He LL, Li DX |
229 - 233 |
Thermal evolution of alpha- and beta-phases in the thin GaN on (001) GaAs Park YJ, Koh EK, Park CS, Park IW, Kim EK |
234 - 239 |
X-ray diffraction investigations of structural changes in Co/Cu multilayers at elevated temperatures Hecker M, Pitschke W, Tietjen D, Schneider CM |
240 - 246 |
SIMS characterization of GaAs MIS devices at the interface Chakraborty BR, Dilawar N, Pal S, Bose DN |
247 - 255 |
Evaluation of interfacial toughness and bond strength of sandwiched silicon structures Latella BA, Nicholls TW, Cassidy DJ, Barbe CJ, Triani G |
256 - 261 |
Ion irradiation effects on hardness and elastic modulus in AZ 1350Jphotoresist film Foerster CE, Garcia ITS, Zawislak FC, Serbena FC, Lepienski CM, Schreiner WH, Abbate M |
262 - 267 |
Optical constants of indium tin oxide films as determined by a surface plasmon phase method Vaicikauskas V, Bremer J, Hunderi O, Antanavicius R, Januskevicius R |
268 - 273 |
RF-magnetron-sputtered heteroepitaxial YSZ and CeO2/YSZ/Si(001) thin films with improved capacitance-voltage characteristics Wakiya N, Yoshida M, Kiguchi T, Shinozaki K, Mizutani N |
274 - 279 |
Sensitivity of SrBi2Ta2O9 capacitors to materials and annealing processes in upper electrode formation Ohfuji S, Itsumi M, Ogawa S, Shinojima H |
280 - 288 |
Interfacial polymerization of a 3,4-ethylenedioxythiophene derivative using Langmuir-Blodgett technique. Spectroscopic and electrochemical characterizations Fichet O, Tran-Van F, Teyssie D, Chevrot C |
289 - 297 |
Nano structure analysis of sputtered thin films consisting of cobalt oxide and soda-lime glass composite Yamamoto H, Naito T, Terao M, Shintani T |
298 - 302 |
Crystallization process of amorphous silicon-carbon alloys Calcagno L, Musumeci P, Roccaforte F, Bongiorno C, Foti G |