Journal of Crystal Growth

Journal of Crystal Growth, Vol.221 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (136 articles)

1 - 11	Surface processes in OMVPE - the frontiers Stringfellow GB, Shurtleff JK, Lee RT, Fetzer CM, Jun SW
12 - 19	TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures Patriarche G, Glas F, Le Roux G, Largeau L, Mereuta A, Ougazzaden A, Benchimol JL
20 - 25	MOVPE strain layers - growth and application Strupinski W, Dillner L, Sass J, Kosiel K, Stake J, Ingvarson M, Jakiela R
26 - 30	Fabrication of a P-stabilized CaP(001)-(2 x 1) surface at very low pressure studied by LEED, STM, AES, and RHEED Fukuda Y, Sekizawa N, Mochizuki S, Sanada N
31 - 36	Sb-flow-rate dependence of triple-period (TP)-A-type atomic-ordering in Ga0.5In0.5P grown by metalorganic-vapor-phase epitaxy Suzuki T, Ichihashi T, Kurihara K, Nishi K
37 - 40	Perfect "fractal" behavior in XRD pattern of Ga(As,P) Fibonacci lattice grown by atomic layer epitaxy Isshiki H, Lee JS, Aoyagi Y, Sugano T
41 - 46	Impurity incorporation of unintentionally doped AlxGa1-xAs during MOVPE Fujii K, Kawamura K, Gotoh H
47 - 52	Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces Motohisa J, Tazaki C, Akabori M, Fukui T
53 - 58	Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor Brunner F, Bergunde T, Richter E, Kurpas P, Achouche M, Maassdorf A, Wurfl J, Weyers M
59 - 65	Heavily carbon-doped GaAsSb grown on InP for HBT applications Watkins SP, Pitts OJ, Dale C, Xu XG, Dvorak MW, Matine N, Bolognesi CR
66 - 69	Carbon doping of InAlAs in LP-MOVPE using CBr4 Ougazzaden A, Holavanahalli J, Geva M, Smith LE
70 - 74	Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H-2 and N-2 carrier gas Schroeter-Janssen H, Roehle H, Franke D, Bochnia R, Harde P, Grote N
75 - 80	Influence of Zn introduction on Al(x)Ga(1-x)AS crystal growth by MOVPE Fujii K, Kawamura K, Gotoh H
81 - 85	Synthesis of oxygen-free trimethylindium using second generation adduct purification techniques Coward KM, Jones AC, Bickley JF, Steiner A, Smith LM, Ravetz MS, Rushworth SA, Odedra R, Roberts JS, Pemble ME
86 - 90	Low oxygen content trimethylaluminium and trimethylindium for MOVPE of light emitting devices Smith LM, Rushworth SA, Ravetz MS, Odedra R, Kanjolia R, Agert C, Dimroth F, Schubert U, Bett AW
91 - 97	On the choice of precursors for the MOVPE-growth of high-quality Al(0.30)Gao(0.70)As/GaAs v-groove quantum wires with large subband spacing Kaluza A, Schwarz A, Gauer D, Hardtdegen H, Nastase N, Luth H, Schapers T, Meertens D, Maciel A, Ryan J, O'Sullivan E
98 - 105	In situ studies of the effect of silicon on GaN growth modes Munkholm A, Stephenson GB, Eastman JA, Auciello O, Murty MVR, Thompson C, Fini P, Speck JS, DenBaars SP
XI - XI	Proceedings of the Tenth International Conference on Metalorganic Vapor Phase Epitaxy Sapporo, Japan, 5-9 June 2000 - Preface Onabe K, Kawai H
106 - 110	In situ observation of superstructures on InP(001) surface under hydrogen atmospheric environment with using grazing incidence X-ray diffraction Kawamura T, Watanabe Y, Utsumi Y, Uwai K, Matsui J, Kagoshima Y, Tsusaka Y, Fujikawa S
111 - 116	Real-time monitoring of ellipsometry monolayer oscillations during metalorganic vapor-phase epitaxy Lee JS, Masumoto Y
117 - 123	In situ monitoring of the MOCVD growth of CdS/CdTe Irvine SJC, Hartley A, Stafford A
124 - 128	Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100) Hannappel T, Visbeck S, Zorn M, Zettler JT, Willig F
129 - 135	Kinetic study of P and As desorption from binary and ternary III-V semiconductors surface by in situ ellipsometry Feron O, Nakano Y, Shimogaki Y
136 - 141	Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE Nakano T, Nakano Y, Shimogaki Y
142 - 148	Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry Stafford A, Irvine SJC, Bougrioua Z, Jacobs K, Moerman I, Thrush EJ, Considine L
149 - 155	In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy Pristovsek M, Han B, Zettler JT, Richter W
156 - 159	In situ reflectance monitoring of overgrowth of InGaAs gratings in laser diode manufacture Ebert CW, Joyner CH, Rao GK, Venables RD
160 - 165	In situ characterisation of epiready III-V substrates for MOVPE Allwood DA, Grant IR, Mason NJ, Palmer RA, Walker PJ
166 - 171	Infrared single wavelength gas composition monitoring for metalorganic vapour-phase epitaxy Watkins SP, Pinnington T, Hu J, Yeo P, Kluth M, Mason NJ, Nicholas RJ, Walker PJ
172 - 176	Surface and bulk passivation of defects in GaAs/Si by RF plasma-assisted MOCVD Wang G, Ogawa T, Soga T, Jimbo T, Umeno M
177 - 182	MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride Wolfram P, Ebert W, Kreissl J, Grote N
183 - 188	Highly selective growth of AlGaInAs assisted by CBr4 during MOCVD growth Arakawa S, Itoh M, Kasukawa A
189 - 195	Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices Sudo S, Yokoyama Y, Nakazaki T, Mori K, Kudo K, Yamaguchi M, Sasaki T
196 - 200	Wavelength control of arrayed waveguide by MOVPE selective area growth Kihara T, Nitta Y, Suda H, Miki K, Shimomura K
201 - 207	Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices Son CS, Kim TG, Wang XL, Ogura M
208 - 211	Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE Fukuhisa T, Imafuji O, Mannoh M, Yuri M, Itoh K
212 - 219	GaAs buried growth over tungsten stripe using TEG and TMG Arai T, Tobita H, Miyamoto Y, Furuya K
220 - 224	Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth Soga T, Arokiaraj J, Taguchi H, Jimbo T, Umeno M
225 - 230	Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors Philippens M, Oligschlaeger R, Gerard B, Rushworth S, Gil-Lafon E, Napierala J, Jimenez J, Heime K
231 - 239	Progress in crystal growth of nitride semiconductors Akasaki I
240 - 245	Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition Kwon HK, Eiting CJ, Lambert DJH, Wong MM, Shelton BS, Zhu TG, Liliental-Weber Z, Benamura M, Dupuis RD
246 - 250	MOVPE of GaN on sapphire using the alternate precursor 1,1-dimethylhydrazine Bourret-Courchesne ED, Yu KM, Irvine SJC, Stafford A, Rushworth SA, Smith LM, Kanjolia R
251 - 257	Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model Krost A, Blasing J, Schulze F, Schon O, Alam A, Heuken M
258 - 261	Growth of AlN on sapphire substrates by using a thin AlN buffer layer grown two-dimensionally at a very low V/III ratio Ohba Y, Sato R
262 - 266	In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers Figge S, Bottcher T, Einfeldt S, Hommel D
267 - 270	High hole concentrations in Mg-doped InGaN grown by MOVPE Kumakura K, Makimoto T, Kobayashi N
271 - 275	AFM measurement of initially grown GaN layer on GaAs substrate Tanaka H, Nakadaira A
276 - 279	Metalorganic vapor-phase epitaxy of cubic GaN on GaAs (100) substrates by inserting an intermediate protection layer Wu J, Zhao FH, Onabe K, Shiraki Y
280 - 285	AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy Ishido T, Funato M, Hamaguchi A, Fujita S, Fujita S
286 - 292	Growth characteristics of GaN on (001)GaP substrates by MOVPE Wuu DS, Lin WT, Pan CC, Horng RH
293 - 296	Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer Strittmatter A, Bimberg D, Krost A, Blasing J, Veit P
297 - 300	Nucleation control in MOVPE of group III-nitrides on SiC substrate Nishida T, Kobayashi N
301 - 304	Growth and characterization of graded AlCaN conducting buffer layers on n(+) SiC substrates Moran B, Hansen M, Craven MD, Speck JS, DenBaars SP
305 - 310	Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy Wakahara A, Genba J, Yoshida A, Saiki H
311 - 315	Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD Sugianto, Sani RA, Arifin P, Budiman M, Barmawi M
316 - 326	Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) Hiramatsu K, Nishiyama K, Onishi M, Mizutani H, Narukawa M, Motogaito A, Miyake H, Iyechika Y, Maeda T
327 - 333	Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N-2 carrier gas Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H, Akasaki I
334 - 337	A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE Sakai S, Wang T, Morishima Y, Naoi Y
338 - 344	High-quality GaN films obtained by air-bridged lateral epitaxial growth Ishibashi A, Kidoguchi I, Sugahara G, Ban Y
345 - 349	Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure Ishida M, Ogawa M, Orita K, Imafuji O, Yuri M, Sugino T, Itoh K
350 - 355	Reduced damage of electron cyclotron resonance etching by In doping into p-GaN Makimoto T, Kumakura K, Kobayashi N
356 - 361	In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE Lu DC, Wang CX, Yuan HR, Liu XL, Wang XH
362 - 367	Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition Kwon HK, Eiting CJ, Lambert DJH, Shelton BS, Wong MM, Zhu TG, Dupuis RD
368 - 372	Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs Kim DJ, Moon YT, Song KM, Choi CJ, Ok YW, Seong TY, Park SJ
373 - 377	MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence Shee SK, Kwon YH, Lam JB, Gainer GH, Park GH, Hwang SJ, Little BD, Song JJ
378 - 381	Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy Kurimoto M, Takano T, Yamamoto J, Ishihara Y, Horie M, Tsubamoto M, Kawanishi H
382 - 387	The reaction mechanisms for precursors in photo-assisted metalorganic-vapor-phase epitaxy growth of ZnSe Fujita Y
388 - 392	Optical and structural properties of high-quality ZnS epitaxial layers grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition Nakamura S, Takagimoto S, Ando T, Kugimiya H, Yamada Y, Taguchi T
393 - 397	Compensation of nitrogen acceptor in ZnSe : N/ZnSe grown by MOCVD Wang J, Miki T, Omino A, Park KS, Isshiki M
398 - 403	Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy Kawahara T, Ohbuchi Y, Tabuchi N, Morimoto J, Goto H, Ido T
404 - 409	Effects of substrate temperature upon photoluminescence properties of ZnTe layers grown by photo-assisted MOVPE Hayashida K, Nishio M, Harada H, Furukawa S, Guo QX, Ogawa H
410 - 415	Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs Prete P, Lovergine N, Tapfer L, Berti M, Sinha SK, Mancini AM
416 - 420	ZnMgCdSe structures on InP grown by MOVPE Strassburg M, Strassburg M, Schulz O, Pohl UW, Bimberg D, Litvinov D, Gerthsen D, Schmidbauer M, Schafer P
421 - 424	Epitaxial growth of MgxZn1-xS heterostructures by low-pressure MOCVD Yoshimura K, Ishizaki S, Yamada Y, Taguchi T
425 - 430	Growth mechanism of selectively grown II-VI semiconductor photonic dots for short-wavelength light emitters Ueta A, Shimozawa T, Avramescu A, Suemune I, Machida H, Shimoyama N
431 - 434	Hetero-epitaxial growth of ZnO thin films by atmospheric pressure CVD method Kashiwaba Y, Katahira F, Haga K, Sekiguchi T, Watanabe H
435 - 439	Role of ZnS buffer layers in growth of zincblende ZnO on GaAs substrates by metalorganic molecular-beam epitaxy Ashrafi AA, Ueta A, Kumano H, Suemune I
440 - 443	Homoepitaxial YBa2Cu3Ox films grown on single-crystal YBa2Cu3Ox substrates by metalorganic chemical vapor deposition using beta-diketonates Zama H, Tanaka N, Morishita T
444 - 449	Novel Sb-based materials for uncooled infrared photodetector applications Lee JJ, Razeghi M
450 - 455	MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor Giesen C, Szymakowski A, Rushworth S, Heuken M, Heime K
456 - 460	High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy Toivonen J, Hakkarainen T, Sopanen M, Lipsanen H
461 - 466	Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy Takahashi M, Moto A, Tanaka S, Tanabe T, Takagishi S, Karatani K, Nakayama M, Matsuda K, Saiki T
467 - 474	Spatial distribution of deep level traps in GaNAs crystals Tanaka S, Moto A, Takahashi M, Tanabe T, Takagishi S
475 - 480	AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE Auvray L, Dumont H, Dazord J, Monteil Y, Bouix J, Bru-Chevalier C
481 - 484	Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs1-xNx alloys using spectroscopic ellipsometry Matsumoto S, Yaguchi H, Kashiwase S, Hashimoto T, Yoshida S, Aoki D, Onabe K
485 - 490	Hydrogen and carbon incorporation in GaInNAs Moto A, Takahashi M, Takagishi S
491 - 495	Effects of thermal annealing procedure and a strained intermediate layer on a highly-strained GaInNAs/GaAs double-quantum-well structure Kitatani T, Kondow M, Tanaka T
496 - 502	Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm Bugge F, Zeimer U, Gramlich S, Rechenberg I, Sebastian J, Erbert G, Weyers M
503 - 508	Critical layer thickness of 1.2-mu m highly strained GaInAs/GaAs quantum wells Schlenker D, Miyamoto T, Chen ZB, Kawaguchi M, Kondo T, Gouardes E, Koyama F, Iga K
509 - 514	Characterization of InGaP/GaAs heterointerfaces grown by metal organic vapour phase epitaxy Sharma TK, Arora BM, Gokhale MR, Rajgopalan S
515 - 519	Ordering-induced electron accumulation at GaInP/GaAs hetero-interfaces Tanaka T, Takano K, Tsuchiya T, Sakaguchi H
520 - 524	Rapid high-resolution X-ray diffraction measurement and analysis of MOVPE pHEMT structures using a high-brilliance X-ray source and automatic pattern fitting Lafford T, Taylor M, Wall J, Loxley N
525 - 529	MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates Kim J, Cho S, Sanz-Hervas A, Majerfeld A, Kim BW
530 - 534	Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD Nishiyama N, Arai M, Shinada S, Miyamoto T, Koyama F, Iga K
535 - 539	Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells Venkataraghavan R, Gokhale MR, Shah AP, Bhattacharya A, Chandrasekaran KS, Arora BM
540 - 545	OMVPE fabrication of continuous transitions between GaAs/AlGaAs quantum wells and V-groove quantum wires Lelarge F, Kaufman D, Dwir B, Mautino S, Rudra A, Kapon E
546 - 550	Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy Suemune I, Morooka N, Uesugi K, Ok YW, Seong TY
551 - 555	Origin of disorder in self-ordered GaAs/AlGaAs quantum wires grown by OMVPE on V-grooved substrate Lelarge F, Otterburg T, Oberli DY, Rudra A, Kapon E
556 - 560	Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source Wang XL, Ogura M
561 - 565	GaInNAs/GaAs quantum dots grown by chemical beam epitaxy Makino S, Miyamoto T, Kageyama T, Nishiyama N, Koyama F, Iga K
566 - 570	Size control of self-assembled quantum dots Johansson J, Seifert W
571 - 575	Growth of self-assembled GaxIn1-xP quantum islands on GaP Porsche J, Scholz F
576 - 580	Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images Tachibana K, Someya T, Ishida S, Arakawa Y
581 - 585	Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots Sellin R, Heinrichsdorff F, Ribbat C, Grundmann M, Pohl UW, Bimberg D
586 - 591	Low-index facet formation in InGaAs islands on GaAs (n11)B substrates Lee JS, Nishi K, Masumoto Y
592 - 598	Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques Steimetz E, Wehnert T, Kirmse H, Poser F, Zettler JT, Neumann W, Richter W
599 - 604	Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy Hahn CK, Motohisa J, Fukui T
605 - 610	Magnetic and optical properties of Mn-including InAs dots grown by metalorganic molecular beam epitaxy Zhou YK, Asahi H, Asakura J, Okumura S, Asami K, Gonda S
611 - 615	Thin GaSb insertions and quantum dot formation in GaAs by MOCVD Muller-Kirsch L, Pohl UW, Heitz R, Kirmse H, Neumann W, Bimberg D
616 - 621	Performance of multiwafer reactor GaN MOCVD system Tokunaga H, Tan H, Inaishi Y, Arai T, Yamaguchi A, Hidaka J
622 - 628	Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design Pawlowski RP, Theodoropoulos C, Salinger AG, Mountziaris TJ, Moffat HK, Shadid JN, Thrush EJ
629 - 634	Uniformity control of group-III nitrides grown on 5 x 3 inch Al2O3 substrates in Planetary Reactors((R)) Protzmann H, Luenenbuerger M, Bremser M, Heuken M, Juergensen H
635 - 639	A study of cylinder design for solid OMVPE sources Timmons M, Rangarajan P, Stennick R
640 - 645	Properties of GaN-based laser diodes with a buried-ridge structure Asatsuma T, Nakajima H, Hashimoto S, Yamaguchi T, Yoshida H, Tomiya S, Asano T, Hino T, Ozawa M, Miyajima T, Kobayashi T, Ikeda M
646 - 651	AlGaInN high-power lasers grown on an ELO-GaN layer Takeya M, Yanashima K, Asano T, Hino T, Ikeda S, Shibuya K, Kijima S, Tojyo T, Ansai S, Uchida S, Yabuki Y, Aoki T, Asatsuma T, Ozawa M, Kobayashi T, Morita E, Ikeda M
652 - 656	High-power ohmic-electrodes dispersive AlGaInP double-hetero structure yellowish-green light-emitting diodes Hosokawa Y, Nabekura W, Hoshina T, Takeuchi R, Sakaue K, Udagawa T
657 - 662	Low threshold current densities in red VCSELs Butendeich R, Graef D, Schwarz J, Ballmann T, Schweizer H, Scholz F
663 - 667	Optimization of MOVPE growth for 650 nm-emitting VCSELs Bhattacharya A, Zorn M, Oster A, Nasarek M, Wenzel H, Sebastian J, Weyers M, Trankle G
668 - 673	InAlGaP microcavity LEDs on Ge-substrates Modak P, Delbeke D, Moerman I, Baets R, Van Daele P, Demeester P
674 - 678	InP 1.3 mu m microcavity LEDs with high quantum efficiency Depreter B, Moerman I, Baets R, Van Daele P, Demeester P
679 - 682	High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD Lane B, Razeghi M
683 - 687	MOVPE growth of lattice-mismatched Al0.88In0.12As on GaAs (100) for space solar cell applications Sinharoy S, Stan MA, Pal AM, Weizer VG, Smith MA, Wilt DM, Reinhardt K
688 - 692	Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application Imaizumi M, Adachi M, Fujii Y, Hayashi Y, Soga T, Jimbo T, Umeno M
693 - 698	Polarization-insensitive InGaAsP/InP vertical coupler filter with deep grating by five-step MOVPE growth Horita M, Yazaki T, Tanaka S, Matsushima Y
699 - 703	Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE Tawara T, Yoshida H, Yogo T, Tanaka S, Suemune I
704 - 712	MOVPE overgrowth of metallic features for realisation of 3D metal-semiconductor quantum devices Wernersson LE, Borgstrom M, Gustafson B, Gustafsson A, Jarlskog L, Malm JO, Litwin A, Samuelson L, Seifert W
713 - 716	Metal-organic VPE growth of electron mobility enhanced GaInP/GaInAs pseudomorphic two-dimensional FET structure Kimura M, Okano T, Okuyama M, Udagawa T, Azuhata H, Sawada A, Takamasu T
717 - 721	Low tensile strain GaInAs : uid/GaAs : C superlattice heterostructures grown by LP MOCVD: application to GaInP/GaAs heterojunction bipolar transistor base layer di Forte-Poisson MA, Bernard S, Teisseire L, Brylinski C, Cassette S, di Persio J
722 - 729	InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources Velling P, Agethen M, Prost W, Tegude FJ
730 - 733	The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition Lambert DJH, Huang JJ, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Liliental-Weber Z, Benarama M, Feng M, Dupuis RD
734 - 738	Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD Cheong MG, Kim KS, Namgung NW, Han MS, Yang GM, Hong CH, Suh EK, Lim KY, Lee HJ, Yoshikawa A
739 - 742	Large electron field emission from high-quality heavily Si-doped AlN grown by MOVPE Kasu M, Kobayashi N
743 - 750	Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy Koukitu A, Kumagai Y, Seki H
751 - 757	Gas-phase chemistry of metalorganic and nitrogen-bearing compounds Watwe RM, Dumesic JA, Kuech TF
758 - 764	Detailed thermal boundary conditions in the 3D fluid-dynamic modelling of horizontal MOVPE reactors Mucciato R, Lovergine N
765 - 771	Regional density functional theory for crystal growth in GaN Nakamura K, Hayashi T, Tachibana A, Matsumoto K