| 1 - 3 |
An atomic ordering based AlInP unicompositional quantum well grown by MOVPE
Tang XH, Zhao JH, Teng JH, Yong AM |
| 4 - 9 |
Experimental and theoretical studies on physicochemical properties of L-leucine nitrate a probable nonlinear optical material
Adhikari S, Kar T |
| 10 - 16 |
Preparation, characterization and third order nonlinear optical properties of the bis(tetrabutylammonium)-[Cd(dmit)(2)] (dmit=2-thioxo-1, 3-dithio1-4,5-dithiolate) for all-optical switching applications at blue-green light band
Jin LT, Wang XQ, Ren Q, Cai NN, Chen JW, Li TB, Liu XT, Wang LN, Zhang GH, Zhu LY, Xu D |
| 17 - 21 |
Growth velocity and grain size of multicrystalline solar cell silicon
Brynjulfsen I, Fujiwara K, Usami N, Amberg L |
| 22 - 25 |
Surface morphology and optical property of thermally annealed GaN substrates
Oh DK, Bang SY, Choi BG, Maneeratanasarn P, Lee SK, Chung JH, Freitas JA, Shim KB |
| 26 - 32 |
The effect of the flow driven by a travelling magnetic field on solidification structure of Sn-Cd peritectic alloys
Wang L, Shen J, Qin L, Feng ZR, Wang LS, Fu HZ |
| 33 - 45 |
Stabilizing detached Bridgman melt crystal growth: Proportional-integral feedback control
Yeckel A, Daoutidis P, Derby JJ |
| 46 - 52 |
Smoothness and cleanliness of the GaAs (100) surface after thermal desorption of the native oxide for the synthesis of high mobility structures using molecular beam epitaxy
Lee JJD, West KW, Baldwin KW, Pfeiffer LN |
| 53 - 57 |
Order-disorder transition in wurtzite InxGa1-xN
Elyukhin VA |
| 58 - 64 |
Revisiting the Hydrothermal growth of YAG
McMillen CD, Mann M, Fan JH, Zhu L, Kolis JW |
| 65 - 69 |
Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness
Okada A, Toko K, Hara KO, Usami N, Suemasu T |
| 70 - 74 |
Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
Ploch S, Wernicke T, Thalmair J, Lohr M, Pristovsek M, Zweck J, Weyers M, Kneissl M |
| 75 - 80 |
Influence of Y2O3 and CeO2 additions on growth of YBCO bulk superconductors
Volochova D, Diko P, Antal V, Radusovska M, Piovarci S |
| 81 - 81 |
Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3 (vol 350, pg 56, 2012)
Imade M, Bu Y, Sumi T, Kitamoto A, Yoshimura M, Sasaki T, Isemura M, Mori Y |
