Journal of Crystal Growth

Journal of Crystal Growth, Vol.360 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (39 articles)

1 - 2	5th International Workshop on Crystal Growth Technology Preface Uecker R, Bliss DF, Ganschow S
3 - 11	Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter scheduling Neubert M, Winkler J
12 - 17	Numerical investigation of oxygen impurity distribution during multicrystalline silicon crystal growth using a gas flow guidance device Teng YY, Chen JC, Lu CW, Chen CY
18 - 24	Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growth Collet Y, Magotte O, Van den Bogaert N, Rolinsky R, Loix F, Jacot M, Regnier V, Marchal JM, Dupret F
25 - 29	Analysis of the practical stability of dewetted Bridgman growth of GaAs Epure S, Duffar T
30 - 34	Numerical and experimental modeling of VGF-type buoyant flow under the influence of traveling and rotating magnetic fields Galindo V, Niemietz K, Patzold O, Gerbeth G
35 - 37	Influence of solid-liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fields Kozhemyakin GN
38 - 42	Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth Liu X, Liu LJ, Li ZY, Wang Y
43 - 46	Float-Zone silicon crystal growth at reduced RF frequencies Rost HJ, Menzel R, Luedge A, Riemann H
47 - 51	Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3 Taishi T, Hashimoto Y, Ise H, Murao Y, Ohsawa T, Yonenaga I
52 - 55	Bulk PPKTP by crystal growth from high temperature solution Pena A, Menaert B, Boulanger B, Laurell F, Canalias C, Pasiskevicius V, Ortega L, Segonds P, Debray J, Felix C
56 - 60	State-of-the-art growth of silicon for PV applications Arnberg L, Di Sabatino M, Ovrelid EJ
61 - 67	Purification of silicon for photovoltaic applications Delannoy Y
68 - 75	Grain control in directional solidification of photovoltaic silicon Lan CW, Lan WC, Lee TF, Yu A, Yang YM, Hsu WC, Hsu B, Yang A
76 - 80	Numerical studies on a type of mechanical stirring in directional solidification method of multicrystalline silicon for photovoltaic applications Dumitrica S, Vizman D, Garandet JP, Popescu A
81 - 86	Characterization of mc-Si directionally solidified in travelling magnetic fields Kiessling FM, Bullesfeld F, Dropka N, Frank-Rotsch C, Muller M, Rudolph P
87 - 91	Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot Li ZY, Liu LJ, Liu X, Zhang YF, Xiong JF
92 - 94	Influence of SiC pedestal in the growth of 50 mm CZT by Vertical gradient freeze method Crocco J, Bensalah II, Zheng Q, Carcelen V, Dieguez E
95 - 98	Heat distribution during melting and solidification of NaI(Tl) using skull technique Taranyuk V, Gektin A, Kisil I, Kolesnikov A
99 - 104	Growth of eutectic ceramic structures by directional solidification methods Orera VM, Pena JI, Oliete PB, Merino RI, Larrea A
105 - 110	Crystal growth of rutile by tilting-mirror-type floating zone method Watauchi S, Sarker MAR, Nagao M, Tanaka I, Watanabe T, Shindo I
111 - 118	Three-dimensional simulation and analysis of heat transfer and flow field in micro-floating zone of LHPG with asymmetrical perturbation Chen PY, Huang EP, Lo CY
119 - 122	Microstructural stability at elevated temperatures of directionally solidified Al2O3/Er3Al5O12 eutectic ceramics Mesa MC, Oliete PB, Larrea A
123 - 126	Processing, microstructure and optical properties of the directionally solidified Al2O3-EuAlO3 eutectic rods Oliete PB, Mesa MC, Merino RI, Orera VM
127 - 130	Modifications of micro-pulling-down method for the growth of selected Li-containing crystals for neutron scintillator and VUV scintillation crystals Pejchal J, Fujimoto Y, Chani V, Yanagida T, Yokota Y, Yoshikawa A, Nikl M, Beitlerova A
131 - 133	Enhanced crystallization on porous silicon: Facts and models Stolyarova S, Baskin E, Nemirovsky Y
134 - 145	Modern trends in crystal growth and new applications of sapphire Akselrod MS, Bruni FJ
146 - 154	Problems and recent advances in melt crystal growth technology Zharikov EV
155 - 157	Single crystals of novel alkali metal intercalated iron chalcogenide superconductors Krzton-Maziopa A, Pomjakushina E, Conder K
158 - 161	Dynamic control over the heat field during LBO crystal growth by High temperature solution method Kokh A, Vlezko V, Kokh K, Kononova N, Villeval P, Lupinski D
162 - 166	Study on influence of growth conditions on position and shape of crystal/melt interface of alkali lead halide crystals at Bridgman growth Kral R
167 - 171	Perfection of NaNO3 single crystals grown by axial vibrational control technique in Czochralski configuration Avetissov IC, Sadovskiy AP, Sukhanova EA, Orlova GY, Belogorokhov IA, Zharikov EV
172 - 175	Thermodynamic modeling of the LiF-YF3 phase diagram dos Santos IA, Klimm D, Baldochi SL, Ranieri IM
176 - 180	Polytype-selective growth of SiC by supersaturation control in solution growth Seki K, Alexander, Kozawa S, Harada S, Ujihara T, Takeda Y
181 - 184	High temperature top seeded solution growth of stoichiometric lithium niobate LiNbO3 (sLN) with planar interface Szaller Z, Peter A, Polgar K, Szabo G
185 - 188	Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species Guguschev C, Dittmar A, Moukhina E, Hartmann C, Golka S, Wollweber J, Bickermann M, Fornari R
189 - 192	Role of surface effects on silicon carbide polytype stability Mercier F, Nishizawa S
193 - 196	Structural and surface topography analysis of AlN single crystals grown on 6H-SiC substrates Sumathi RR, Barz RU, Straubinger T, Gille P
197 - 200	Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates Togashi R, Nagashima T, Harada M, Murakami H, Kumagai Y, Yanagi H, Koukitu A