1 - 1 |
The 5th Asia conference on Crystal Growth and Crystal Technologies Liu XY |
2 - 5 |
Ab initio-based approach to elemental growth process on the InAs wetting layer grown on GaAs substrate Ito T, Ogasawara K, Sugitani T, Akiyama T, Nakamura K |
6 - 12 |
Change in the branch period of the step pattern formed by a moving linear source-initial coarsening and effect of an abrupt change in the velocity Kondo S, Kawaguchi M, Sato M, Uwaha M |
13 - 15 |
Multiple-to-dominant path collapse of linked-flux model for diffusion-limited nucleation Lau YH, Wu DT |
16 - 19 |
On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange process Usami N, Jung MN, Suemasu T |
20 - 23 |
The effect of interfacial kinetics on the morphological stability of a spherical particle Chen MW, Wang XF, Wang F, Lin GB, Wang ZZ |
24 - 28 |
Influence of growth ambience and doping on the structural properties of multiferroic DyMnO3 Nair HS, Elizabeth S |
29 - 32 |
Ab initio-based approach to elemental nitridation process of alpha-Al2O3 Saito Y, Akiyama T, Nakamura K, Ito T |
33 - 37 |
Microstructure of diphase dendrite in Al-35%La alloy during solidification Zheng YH, Wang ZD, Zhang SM |
38 - 41 |
Optimization of silicon crystallization in a Bridgman growth furnace by numerical modeling Bellmann MP, Dalaker H, Syvertsen M, Gouttebroze S, M'Hamdi M |
42 - 44 |
Structural stability and electronic properties in Al2O3-Cr2O3 mixed crystal Kitaoka Y, Nakamura K, Akiyama T, Ito T |
45 - 51 |
Three-dimensional simulation and experiment on micro-floating zone of LHPG with asymmetrical perturbation Lo CY, Chen PY |
52 - 57 |
Crystallization kinetics and characterization of nanosized Nd:YAG by a modified sol-gel combustion process Gong H, Tang DY, Huang H, Han MD, Sun T, Zhang J, Qin XP, Ma J |
58 - 61 |
Microstructure evolution in Cu-1.54 wt% Cr alloy during directional solidification Que ZP, Lee JH, Jung HM, Shin JH, Han SZ, Euh KJ |
62 - 65 |
A simple anisotropic surface free energy function for three-dimensional phase field modeling of multi-crystalline crystal growth Lin HK, Chen CC, Lan CW |
66 - 70 |
Growth and dissolution kinetics of alpha and gamma polymorphs of DL-methionine Wantha L, Flood AE |
71 - 76 |
Ultrasonic crystallization monitoring technique for simultaneous in-line measurement of liquid and solid phase Stelzer T, Pertig D, Ulrich J |
77 - 82 |
Analysis of W-shape melt/crystal interface formation in Czochralski silicon crystal growth Noghabi OA, Jomaa M, M'hamdi M |
83 - 87 |
3D modelling of stresses and deformations during crystallisation of silicon accounting for ingot-crucible interactions M'Hamdi M, Gouttebroze S, Fjaer HG |
88 - 92 |
Crystal growth rates and optical resolution of DL-methionine hydrochloride by preferential crystallization from aqueous solution Srimahaprom W, Flood AE |
93 - 98 |
Effect of flow pattern on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon Bellmann MP, M'Hamdi M |
99 - 102 |
Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals Mercier F, Nishizawa S |
103 - 105 |
Nucleation of Si and Ge by rapid cooling using molecular-dynamics simulation Xiao YP, Motooka T, Teranishi R, Munetoh S |
106 - 110 |
Phase field modeling of crystal growth with nonlinear kinetics Liu SH, Chen CC, Lan CW |
111 - 115 |
Synthesis and growth mechanism of tubular YAl3(BO3)(4) crystals in millimeter diameter Cao ZL, Yu XS, Yue YC, Hu ZG |
116 - 120 |
Crystallization in Na2O-Nb2O5-Al2O3-SiO2 glass-ceramics system with partial replacement of SnO2 for Al2O3 Kongputhon P, Niyompan A, Tipakontitikul R |
121 - 124 |
Bridgman growth and characterization of Bi-4(GexSi1-x)(3)O-12 mixed crystals Zhang Y, Xu JY, He QB, Lu BL |
125 - 129 |
Synthesis and growth of ZnGeP2 crystals: Prevention of non-stoichiometry Cheng J, Zhu SF, Zhao BJ, Chen BJ, He ZY, Fan Q, Xu T |
130 - 134 |
Growth and physical properties of a new crystal for NLO applications: Bisguanidinium hydrogen phosphate monohydrate (G2HP) Raj KR, Murugakoothan P |
135 - 139 |
Control of polymorphism in the anti-solvent crystallization with a particular temperature profile Minamisono T, Takiyama H |
140 - 144 |
Germanium-doped crystalline silicon: A new substrate for photovoltaic application Yang DR, Wang P, Yu XG, Que DL |
145 - 148 |
Growth of Ce-doped Ba3Gd(BO3)(3) and Sr3Gd(BO3)(3) single crystals by micro-pulling-down method and analysis of luminescence properties Simura R, Yagi T, Sugiyama K, Yanagida T, Yoshikawa A |
149 - 152 |
Liquid-phase explosive crystallization of electron-beam-evaporated a-Si films induced by flash lamp annealing Ohdaira K, Matsumura H |
153 - 156 |
Synthesis and physical properties of Li7V0.5Mn0.5N4 Suzuki Y, Inoue Y, Kuriyama K, Kushida K |
157 - 161 |
Crystal growth and luminescence properties of Cr-doped YAlO3 single crystals Sugiyama M, Yanagida T, Totsuka D, Yokota Y, Futami Y, Fujimoto Y, Yoshikawa A |
162 - 166 |
Salts of amino acids with hexafluorosilicate anion Ghazaryan VV, Fleck M, Petrosyan AM |
167 - 169 |
Micro-pulling down method-grown Er3+:LiCaAlF6 as prospective vacuum ultraviolet laser material Cadatal-Raduban M, Shimizu T, Yamanoi K, Takeda K, Pham MH, Nakazato T, Sarukura N, Kawaguchi N, Fukuda K, Suyama T, Yanagida T, Yokota Y, Yoshikawa A |
170 - 173 |
Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates Leone S, Henry A, Janzen E, Nishizawa S |
174 - 177 |
Synthesis and characterisation of Copper Zinc Tin Sulphide (CZTS) compound for absorber material in solar-cells Kheraj V, Patel KK, Patel SJ, Shah DV |
178 - 181 |
Growth and scintillation properties of Nd-doped Lu3Al5O12 single crystals by Czochralski and micro-pulling-down methods Sugiyama M, Fujimoto Y, Yanagida T, Yamaji A, Yokota Y, Yoshikawa A |
182 - 188 |
Mixed salts of amino acids with different anions Ghazaryan VV, Fleck M, Petrosyan AM |
189 - 192 |
Growth of neodymium lanthanum calcium borate (NdLCB) single crystals by the Czochralski method and its characterisation Senthilkumar M, Kalidasan M, Sugan S, Dhanasekaran R |
193 - 196 |
The study of rapid thermal annealing on arsenic-doped ZnO for the p-type ZnO formation Chen YJJ, Jen HW, Wong MS, Ho CH, Liang JH, Liu JT, Pang JH |
197 - 201 |
Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys Chen XZ, Zhang DH, Jin YJ, Li JH, Teng JH, Yakovlev N |
202 - 206 |
Crystal growth of lanthanum calcium borate (LCB) single crystals from melt and its characterization Senthilkumar M, Kalidasan M, Sugan, Dhanasekaran R |
207 - 210 |
A simple approach to the polytypism in SiC Ito T, Akiyama T, Nakamura K |
211 - 215 |
Effect of N5+ ion implantation in CVT grown ZnSe single crystals Kannappan P, Krishna JBM, Taki GS, Dhanasekaran R |
216 - 219 |
Crystal growth and characterization of the rare earth orthoferrite PrFeO3 Wang XY, Cao SX, Wang YB, Yuan SJ, Kang BJ, Wu AH, Zhang JC |
220 - 226 |
Unidirectional growth, improved structural perfection and physical properties of a semi-organic nonlinear optical dichlorobis(L-proline)zinc(II) single crystal Charoen-In U, Ramasamy P, Manyum P |
227 - 230 |
Floating zone growth and anisotropic magnetic properties of Pr1/2+ySr1/2-yMnO3 single crystal Kang BJ, Cao SX, Wang XY, Yuan SJ, Qin XL, Zhang JC |
231 - 234 |
Epitaxial growth of self-ordered ZnO nanostructures on sapphire substrates by seed-assisted hydrothermal growth Chen HG, Lian HD, Hung SP, Wang CF |
235 - 237 |
Crystalline coats or hollow crystals as tools for product design in pharmaceutical industry Ulrich J, Schuster A, Stelzer T |
238 - 242 |
Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy Mouleeswaran D, Koyama T, Tanaka A, Hayakawa Y |
243 - 246 |
The control of mean ionic radius at Y site by Lu co-doping for Ce:LiYF4 single crystals Yokota Y, Yamaji A, Yanagida T, Kawaguchi N, Fukuda K, Yoshikawa A |
247 - 251 |
Fabrication and characterization of textured Bi2Te3 thermoelectric thin films prepared on glass substrates at room temperature using pulsed laser deposition Yu ZW, Wang XL, Du Y, Aminorroaya-Yamni S, Zhang C, Chuang K, Li S |
252 - 258 |
Crystal growth and physical characterization of picolinic acid cocrystallized with dicarboxylic acids Somphon W, Haller KJ |
259 - 263 |
Synthesis, growth and characterisation of tetrathiourea cadmium tetrathiocyanato zincate single crystals Pabitha G, Dhanasekaran R |
264 - 267 |
Optical properties of hydrothermal-method-grown ZnO crystal as EUV laser diagnostics material Yamanoi K, Shimizu T, Furukawa Y, Cadatal-Raduban M, Nakazato T, Sakai K, Tsuboi M, Nishi R, Sarukura N, Tanaka M, Nishikino M, Yamatani H, Nagashima K, Kimura T, Fukuda T, Nagasono M, Togashi T, Higashiya A, Yabashi M, Ishikawa T, Ohashi H, Kimura H |
268 - 270 |
Band gap energies of Li2xMg(1-x)O materials synthesized by the sol-gel method Chayed NF, Badar N, Rusdi R, Azahidi A, Kamarulzaman N |
271 - 275 |
Growth, properties and first-principles study of mid-IR nonlinear optical crystal LiInS2 Wang SP, Ruan HP, Liu GD, Zhang GD, Shi Q, Zhang X, Gao ZL, Dong CM, Tao XT |
276 - 281 |
Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy Arimoto K, Furukawa H, Yamanaka J, Yamamoto C, Nakagawa K, Usami N, Sawano K, Shiraki Y |
282 - 287 |
Formation of compressively strained SiGe/Si(110) heterostructures and their characterization Arimoto K, Obata T, Furukawa H, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y |
288 - 290 |
Pr or Ce-doped, fast-response and low-afterglow cross-section-enhanced scintillator with Li-6 for down-scattered neutron originated from laser fusion Watanabe K, Arikawa Y, Yamanoi K, Cadatal-Raduban M, Nagai T, Kouno M, Sakai K, Nazakato T, Shimizu T, Sarukura N, Nakai M, Norimatsu T, Azechi H, Yoshikawa A, Murata T, Fujino S, Yoshida H, Izumi N, Satoh N, Kan H |
291 - 295 |
Effect of thermal annealing on the optical properties of CdGeAs2 wafers Huang W, Zhao BJ, Zhu SF, He ZY, Chen BJ, Li JW, Yu Y, Tang JJ, Liu WJ |
296 - 299 |
Valence state of dopant and scintillation properties of Ce-doped Sr3Y(BO3)(3) crystal Simura R, Kawai S, Sugiyama K, Yanagida T, Sugawara T, Shishido T, Yoshikawa A |
300 - 303 |
The local generation and recombination lifetime based on forward diode characteristics diagnostics Pengchan W, Phetchakul T, Poyai A |
304 - 307 |
Studies on growth, spectral and mechanical properties of new organic NLO crystal: Guanidinium 4-nitrobenzoate (GuNB) Arumanayagam T, Murugakoothan P |
308 - 311 |
Crystal growth and piezoelectric, elastic and dielectric properties of novel LiInS2 crystal Wang SP, Gao ZL, Yin X, Liu GD, Ruan HP, Zhang GD, Shi Q, Dong CM, Tao XT |
312 - 318 |
Impact of diameter fluctuations on thermal stresses during Czochralski silicon growth Noghabi OA, M'Hamdi M, Jomaa M |
319 - 323 |
Growth, vibrational and luminescence analysis of monoclinic KGd(1-x)Prx(WO4)(2) (x=0.005, 0.02, 0.05) single crystals Thangaraju D, Babu SM, Durairajan A, Balaji D, Samuel P, Hayakawa Y |
324 - 326 |
Structural stability of Mn-doped GaInAs and GaInN alloys Miyake M, Nakamura K, Akiyama T, Ito T |
327 - 329 |
Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors Wang LH, Jie WQ |
330 - 337 |
In vitro crystallization, characterization and growth-inhibition study of urinary type struvite crystals Chauhan CK, Joshi MJ |
338 - 342 |
Growth of ADP-KDP mixed crystal and its optical, mechanical, dielectric, piezoelectric and laser damage threshold studies Rajesh P, Ramasamy P, Bhagavannarayana G |
343 - 348 |
Effect of rare earth ions on the properties of glycine phosphite single crystals Senthilkumar K, Babu SM, Kumar B, Bhagavannarayana G |
349 - 352 |
Melt growth, characterization and properties of bulk In2O3 single crystals Galazka Z, Uecker R, Irmscher K, Schulz D, Klimm D, Albrecht M, Pietsch M, Ganschow S, Kwasniewski A, Fornari R |
353 - 356 |
Optical and structural studies of InN/GaN dots with varying GaN cap thickness Ke WC, Kao CY, Houng WC, Wei CA |