Journal of Crystal Growth

Journal of Crystal Growth, Vol.367 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (21 articles)

1 - 7	Accelerated VGF-crystal growth of GaAs under traveling magnetic fields Dropka N, Frank-Rotsch C
8 - 17	Anisotropy function of kinetic coefficient for phase-field simulations: Reproduction of kinetic Wulff shape with arbitrary face angles Miura H
18 - 23	Electron microscopy study of CVT grown Fe-sulphides Zavasnik J, Recnik A
24 - 26	Highly (111)-oriented multiferroic BiFeO3 thin film on a glass substrate Maeng WJ, Son JY
27 - 34	Simulation of heat transfer and convection during sapphire crystal growth in a modified heat exchanger method Zhang N, Park HG, Derby JJ
35 - 41	Growth and characterisation of sulphur-rich TlIn(S1-xSex)(2) single crystals Gomonnai AV, Petryshynets I, Azhniuk YM, Gomonnai OO, Roman IY, Turok II, Solomon AM, Rosul RR, Zahn DRT
42 - 47	Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy Stellmach J, Mehnke F, Frentrup M, Reich C, Schlegel J, Pristovsek M, Wernicke T, Kneissl M
48 - 52	Comparison of morphology, structure and optical properties of GaN powders prepared by Ga2O3 nitridation and gallium nitridation Zeng XH, Han BX, Wang XD, Shi JP, Xu Y, Zhang JC, Wang JF, Zhang JP, Xu K
53 - 56	Observation of the orientation of membrane protein crystals grown in high magnetic force fields Numoto N, Shimizu K, Matsumoto K, Miki K, Kita A
57 - 61	Formation of gaseous cavity defect during growth of Nd:YAG single crystals Yadegari M, Asadian M, Saeedi H, Khodaei Y, Mirzaei N
62 - 67	Preferred orientation growth and size tuning of colloidal SnO2 nanocrystals through Gd3+ doping Yu SX, Yang LW, Li YC, Qi X, Wei XL, Zhong JX
68 - 72	Characterization of the OSF-band structure in n-type Cz-Si using photoluminescence-imaging and visual inspection Sondena R, Hu Y, Juel M, Wiig MS, Angelskar H
73 - 76	Scintillation properties of Bi-4(Ge1-xSix)(3)O-12 single crystals grown by Czochralski method Jiang H, Rooh G, Kim HJ, Park H, Kim S, Zhang WS, Fawad U
77 - 87	Unsteady coupled 3D calculations of melt flow, interface shape, and species transport for directional solidification of silicon in a traveling magnetic field Dadzis K, Vizman D, Friedrich J
88 - 93	Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy Frajtag P, Nepal N, Paskova T, Bedair SM, El-Masry NA
94 - 103	Influence of thermoelectric effects on the morphology of Al-Si eutectic during directional solidification under an axial strong magnetic field Li X, Gagnoud A, Fautrelle Y, Ren ZM, Moreau R
104 - 109	Growth and properties of m-plane GaN on m-plane sapphire by metal-organic chemical vapor deposition Paduano QS, Weyburne DW, Tomich DH
110 - 114	Crystallisation rates of calcite from an amorphous precursor in confinement Darkins R, Cote AS, Freeman CL, Duffy DM
115 - 121	Nonequivalent atomic step edges-Role of gallium and nitrogen atoms in the growth of InGaN layers Turski H, Siekacz M, Wasilewski ZR, Sawicka M, Porowski S, Skierbiszewski C
122 - 125	Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(10(1)over-bar3) crystal on GaAs(110) by MOVPE Cho HC, Togashi R, Murakami H, Kumagai Y, Koukitu A
126 - 130	Directional growth and crystallization of silicon thin films prepared by electron-beam evaporation on oblique and textured surfaces Merkel JJ, Sontheimer T, Rech B, Becker C