1 - 5 |
Enhancement of epitaxial LaNiO3 electrode on the ferroelectric property of La-doped BiFeO3/SrTiO3 artificial superlattice structure by rf sputtering Chiu SJ, Liu YT, Yu GP, Lee HY, Huang JH |
6 - 10 |
Characterization of defect patterns in Cz silicon slabs by carrier density imaging Hu Y, Schon H, Arnberg L |
11 - 20 |
Third order nonlinear optical studies of 1-(4-chloro phenyl)-3-(4-dimethylarnino phenyl) prop-2-en-1-one Janardhana K, Ravindrachary V, Kumar PCR, Yogisha, Ismayil |
21 - 28 |
Determination of heteroepitaxial layer relaxation at growth temperature from room temperature X-ray reciprocal space maps Roesener T, Klinger V, Weuffen C, Lackner D, Dimroth F |
29 - 34 |
Effect of thermocouple position on temperature field in nitride MOCVD reactor Li ZM, Li JP, Jiang HY, Han YB, Yin JQ, Xia YJ, Chang YM, Zhang JC, Hao Y |
35 - 38 |
Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloy system Kim KM, Kim WB, Krishnamurthy D, Ryu JH, Hasegawa S, Asahi H |
39 - 46 |
Well aligned ZnO nanorods growth on the gold coated glass substrate by aqueous chemical growth method using seed layer of Fe3O4 and Co3O4 nanoparticles Ibupoto ZH, Khun K, Lu J, Liu XJ, AlSalhi MS, Atif M, Ansari AA, Willander M |
47 - 55 |
On growth rate hysteresis and catastrophic crystal growth Ferreira C, Rocha FA, Damas AM, Martins PM |
56 - 61 |
The effect of material purity on the optical and scintillation properties of solution-grown trans-stilbene crystals Carman L, Zaitseva N, Martinez HP, Rupert B, Pawelczak I, Glenn A, Mulcahy H, Leif R, Lewis K, Payne S |
62 - 66 |
Control of surface defects in zinc blende MgS grown by MBE Rajan A, Moug RT, Prior KA |
67 - 71 |
Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane Pimputkar S, Kawabata S, Speck JS, Nakamura S |
72 - 80 |
Combined global 2D-local 3D modeling of the industrial Czochralski silicon crystal growth process Jung T, Seebeck J, Friedrich J |
81 - 82 |
Syntheses and structural Characterizations of CrSi2 Nanostructures using Si Substrates under CrCl2 vapor (vol 365, pg 11, 2013) Li W, Meng EC, Matsushita T, Oda S, Ishikawa D, Nakane K, Hu JH, Guan SK, Ishida A, Tatsuoka H |
83 - 86 |
Controlled coalescence of MOVPE grown AlN during lateral overgrowth Kueller V, Knauer A, Zeimer U, Kneissl M, Weyers M |
87 - 91 |
Intrinsic growth of layered structure GaS microtubes from banana-leaf like structures Datta A, Sinha G, Panda SK |
92 - 96 |
Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD Liu YM, Qin FW, Zhang D, Bian JM, Zhao Y, Wang EP, Wang S, Zhong MM, Ju ZH |
97 - 100 |
Crystal growth and scintillation properties of LSO and LYSO crystals Mao RH, Wu C, Dai LE, Lu S |