| 1 - 7 |
Improved control of silicon nanowire growth by the vapor-liquid-solid method using a diffusion barrier layer between catalyst and substrate
Koto M, Shimizu T, Shingubara S |
| 8 - 13 |
beta Growth kinetics from alpha peritectic melting of oxide films
Chen YY, Tang CY, Fang TF, Yan SB, Li H, Yao X, Xiong J, Tao BW |
| 14 - 20 |
Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
Bryant BN, Hirai A, Young EC, Nakamura S, Speck JS |
| 21 - 31 |
Influence of etidronic acid and tartaric acid on the growth of different calcite morphologies
Ukrainczyk M, Stelling J, Vucak M, Neumann T |
| 32 - 37 |
Highly efficient and stable implementation of the Alexander-Haasen model for numerical analysis of dislocation in crystal growth
Gao B, Nakano S, Kakimoto K |
| 38 - 42 |
Etch pit investigation of free electron concentration controlled 4H-SiC
Kim HY, Shin YJ, Kim JG, Harima H, Kim J, Bahng W |
| 43 - 46 |
Top-seeded solution growth and characterization of a novel nonlinear optical crystal MnTeMoO6
Jin CG, Li Z, Huang LX, He MZ |
| 47 - 54 |
Dynamic simulation of impurity transport and chemical reactions in a Bridgman furnace for directional solidification of multi-crystalline silicon
Bellmann MP, Panjwani B, Syvertsen M, Meese EA |
