Journal of Crystal Growth

Journal of Crystal Growth, Vol.370 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (76 articles)

1 - 1	16th International Conference on Metalorganic Vapor Phase Epitaxy Preface Kim JK, Kuech TF, Caneau C, Redwing JM, Dadgar A
2 - 6	MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers Tuna O, Hahn H, Kalisch H, Giesen C, Vescan A, Rzheutski MV, Pavlovskii VN, Lutsenko EV, Yablonskii GP, Heuken M
7 - 11	Fast AlGaN growth in a whole composition range in planetary reactor Lundin WV, Nikolaev AE, Rozhavskaya MM, Zavarin EE, Sakharov AV, Troshkov SI, Yagovkina MA, Tsatsulnikov AF
12 - 15	Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE Moudakir T, Gautier S, Suresh S, Abid M, El Gmili Y, Patriarche G, Pantzas K, Troadec D, Jacquet J, Genty F, Voss P, Ougazzaden A
16 - 21	AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN Mitsunari T, Tanikawa T, Honda Y, Yamaguchi M, Amano H
22 - 25	Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels Song KM, Kim JM, Shin CS, Ko CG, Cho HK, Yoon DH, Hwang SM, Kim H
26 - 29	Defect reduction in (11-22) semipolar GaN with embedded InN islands on m-plane sapphire Jung C, Jang J, Hwang J, Jeong J, Kim J, Lee K, Nam O
30 - 35	HCl-assisted growth of GaN and AlN Fahle D, Brien D, Dauelsberg M, Strauch G, Kalisch H, Heuken M, Vescan A
36 - 41	In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum wells Ju GX, Fuchi S, Tabuchi M, Takeda Y
42 - 45	Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates Svensk O, Ali M, Riuttanen L, Torma PT, Sintonen S, Suihkonen S, Sopanen M, Lipsanen H
46 - 50	Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates Uesugi K, Kuboya S, Sanorpim S, Onabe K
51 - 56	High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure Lazarev S, Bauer S, Forghani K, Barchuk M, Scholz F, Baumbach T
57 - 62	Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE Pantzas K, El Gmili Y, Dickerson J, Gautier S, Largeau L, Mauguin O, Patriarche G, Suresh S, Moudakir T, Bishop C, Ahaitouf A, Rivera T, Tanguy C, Voss PL, Ougazzaden A
63 - 67	Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire Gautier S, Moudakir T, Patriarche G, Rogers DJ, Sandana VE, Teherani FH, Bove P, El Gmili Y, Pantzas K, Sundaram S, Troadec D, Voss PL, Razeghi M, Ougazzaden A
68 - 73	Nitride based heterostructures with Ga- and N-polarity for sensing applications Fandrich M, Mehrtens T, Aschenbrenner T, Klein T, Gebbe M, Figge S, Kruse C, Rosenauer A, Hommel D
74 - 77	Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template Nishio G, Yang SB, Miyake H, Hiramatsu K
78 - 81	Defect states of a-plane GaN grown on r-plane sapphire by controlled integration of silica nano-spheres Pak SW, Lee DU, Kim EK, Park SH, Joo K, Yoon E
82 - 86	Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE Anazawa K, Hassanet S, Fujii K, Nakano Y, Sugiyama M
87 - 91	In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range Berger C, Dadgar A, Blasing J, Krost A
92 - 96	Growth of thick GaN layer on ZnAl2O4 spinel layer by HVPE Yoo J, Choi S, Jung S, Cho Y, Lee J, Lee S, Lee W, Lee H, Kim S, Chang J
97 - 100	InGaN-based solar cells with a tapered GaN structure Lin CF, Chen KT, Chen SH, Yang CC, Huang WC, Hsieh TH
101 - 104	GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures Leute RAR, Heinz D, Wang J, Lipski F, Meisch T, Thonke K, Thalmair J, Zweck J, Scholz F
105 - 108	Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region Rossow U, Kruse A, Jonen H, Hoffmann L, Ketzer F, Langer T, Buss R, Bremers H, Hangleiter A, Mehrtens T, Schowalter M, Rosenauer A
109 - 113	Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer Hwang J, Lee K, Kim JS, Lee CR, Lee IH, Lee K, Lee JH, Leem JY, Kim JS, Ryou JH, Dupuis RD
114 - 119	Improved performance of semi-polar (11-22) GaN-based light-emitting diodes grown on SiNx interlayer Jeong J, Jang J, Hwang J, Jung C, Kim J, Lee K, Lim H, Nam O
120 - 123	INGAN/GAN based semipolar green converters Wang J, Zhang D, Leute RAR, Meisch T, Heinz D, Tischer I, Hocker M, Thonke K, Scholz F
124 - 127	Enhanced emission efficiency of green InGaN/GaN multiple quantum wells by surface plasmon of Au nanoparticles Kwon MK, Kim JY, Park SJ
128 - 132	Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits Guillamet R, Lagay N, Mocuta C, Lagree PY, Carbone G, Decobert J
133 - 135	Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate Matsumoto K, Makino T, Kimura K, Shimomura K
136 - 140	Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect Uchida K, Satoh K, Asano K, Koizumi A, Nozaki S
141 - 145	From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE Sladek K, Haas F, Heidelmann M, Park D, Barthel J, Dorn F, Weirich TE, Grutzmacher D, Hardtdegen H
146 - 149	Site-controlled growth of InP/GaInP islands on periodic hole patterns in GaAs substrates produced by microsphere photolithography Koroknay E, Rengstl U, Bommer M, Jetter M, Michler P
150 - 153	MOVPE-grown AlxGa1-xAsyP1-y strain compensating layers on GaAs Maassdorf A, Zeimer U, Weyers M
154 - 156	Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer Decobert J, Guillamet R, Mocuta C, Carbone G, Guerault H
157 - 162	Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure Ma SJ, Wang YP, Sodabanlu H, Watanabe K, Sugiyama M, Nakano Y
163 - 167	Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE) Kim TW, Garrod TJ, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, Lotshaw WT, Moss SC
168 - 172	Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence Yang C, Lee S, Shin KW, Oh S, Moon D, Kim SD, Kim YW, Kim CZ, Park WK, Choi WJ, Park J, Yoon E
173 - 176	In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient Barrigon E, Bruckner S, Supplie O, Doscher H, Rey-Stolle I, Hannappel T
177 - 181	AP-MOVPE GaInSb: Influence of V/III ratio on quality and indium incorporation Miya SS, Wagener V, Botha JR
182 - 185	Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy Huang CT, Wu JD, Liu CF, Huang YS, Wan CT, Su YK, Tiong KK
186 - 190	MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures Ludewig P, Knaub N, Stolz W, Volz K
191 - 196	Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE Sommer N, Buss R, Ohlmann J, Wegele T, Jurecka C, Liebich S, Kunert B, Stolz W, Volz K
197 - 199	Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers Uchida K, Kanaya H, Imanishi H, Koizumi A, Nozaki S
200 - 203	Optical study of GaAsN/GaAs and InGaAsN/GaAs T-shaped quantum wires grown by MOVPE Klangtakai P, Sanorpim S, Onabe K
204 - 207	Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate Jin XG, Fuchi S, Takeda Y
208 - 211	Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs Schwarzback T, Kahle H, Jetter M, Michler P
212 - 216	High power ( > 5 W) lambda similar to 9.6 mu m tapered quantum cascade lasers grown by OMVPE Wang CA, Goyal AK, Menzel S, Calawa DR, Spencer M, Connors MK, McNulty D, Sanchez A, Turner GW, Capasso F
217 - 220	AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 mu m grown by MOVPE on InP substrate Grasse C, Mueller M, Gruendl T, Boehm G, Roenneberg E, Wiecha P, Rosskopf J, Ortsiefer M, Meyer R, Amann MC
221 - 225	MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808 nm Bugge F, Netzel C, Weyers M
226 - 229	In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers Maassdorf A, Schultz CM, Brox O, Wenzel H, Crump P, Bugge F, Mogilatenko A, Erbert G, Weyers M, Trankle G
230 - 235	InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 mu m-emitting quantum-cascade-laser active regions Mawst LJ, Kirch JD, Chang CC, Kim T, Garrod T, Botez D, Ruder S, Kuech TF, Earles T, Tatavarti R, Pan N, Wibowo A
236 - 239	1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE Wu TH, Su YK, Chuang RW, Huang CY, Wu HJ, Lin YC
240 - 243	GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 mu m light emission grown on InP substrate Grasse C, Gruendl T, Sprengel S, Wiecha P, Vizbaras K, Meyer R, Amann MC
244 - 248	Improved optical absorption and photocurrent of GaAs solar cells with hexagonal micro-hole array surface texturing Lam ND, Kim Y, Kim K, Jung K, Kang HK, Lee J
249 - 253	Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method Wang J, Ryu HB, Park MS, Lee WJ, Choi YJ, Lee HY
254 - 258	Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates Fang H, Takaya Y, Miyake H, Hiramatsu K, Asamura H, Kawamura K, Oku H
259 - 264	GaN growth on Si pillar arrays by metalorganic chemical vapor deposition Won D, Weng XJ, Yuwen YA, Ke Y, Kendrick C, Shen HT, Mayer TS, Redwing JM
265 - 268	Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers Ma J, Zhu XL, Wong KM, Zou XB, Lau KM
269 - 272	High-growth-rate AlGaN buffer layers and atmospheric-pressure growth of low-carbon GaN for AlGaN/GaN HEMT on the 6-in.-diameter Si substrate metal-organic vapor phase epitaxy system Ubukata A, Yano Y, Shimamura H, Yamaguchi A, Tabuchi T, Matsumoto K
273 - 277	The effect of a temperature-varying sandwich buffer layer structure on GaN epitaxial layer grown on Si substrate Lin JH, Huang SJ, Su YK, Hsu CW
278 - 281	Anisotropic bow and plastic deformation of GaN on silicon Dadgar A, Fritze S, Schulz O, Hennig J, Blasing J, Witte H, Diez A, Heinle U, Kunze M, Daumiller I, Haberland K, Krost A
282 - 287	Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC Gamarra P, Lacam C, Tordjman M, di Forte-Poisson MA
288 - 292	MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates Ravash R, Dadgar A, Bertram F, Dempewolf A, Metzner S, Hempel T, Christen J, Krost A
293 - 298	Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy Schulte KL, Garrod TJ, Kim TW, Kirch J, Ruder S, Mawst LJ, Kuech TF
299 - 302	Formation and optical properties of multi-stack InGaAs quantum dots embedded in GaAs nanowires by selective metalorganic chemical vapor deposition Tatebayashi J, Ota Y, Ishida S, Nishioka M, Iwamoto S, Arakawa Y
303 - 306	Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots Hospodkova A, Zikova M, Pangrac J, Oswald J, Kuldova K, Vyskocil J, Hulicius E
307 - 310	Carrier dynamics and activation energy of CdTe/ZnTe nanostructures with different CdTe thicknesses Han WI, Lee JH, Choi JC, Lee HS
311 - 313	MOCVD growth of vertically aligned InGaN nanowires Kuo HC, Oh TS, Ku PC
314 - 318	Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction Jung BO, Kwon YH, Seo DJ, Lee DS, Cho HK
319 - 322	Coaxial InGaN epitaxy around GaN micro-tubes: Tracing the signs Fikry M, Ren Z, Madel M, Tischer I, Thonke K, Scholz F
323 - 327	Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD Longo M, Stoycheva T, Fallica R, Wiemer C, Lazzarini L, Rotunno E
328 - 331	Site-controlled growth of single GaN quantum dots in nanowires by MOCVD Choi K, Arita M, Kako S, Arakawa Y
332 - 335	Fabrication and characterization of high efficiency green nanopillar LED Ju JW, Baek JH, Lee SJ, Jeon DW, Park JW, Choi JH, Jang LW, Lee IH
336 - 341	Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy Winden A, Mikulics M, Stoica T, von der Ahe M, Mussler G, Haab A, Grutzmacher D, Hardtdegen H
342 - 347	Effects of annealing treatment upon electrical and photoluminescence properties of phosphorus-doped ZnMgTe epilayers grown by metalorganic vapor phase epitaxy Nishio M, Kai KT, Fujiki R, Saito K, Tanaka T, Guo QX
348 - 352	Surface morphologies and photoluminescence properties of undoped and P-doped ZnTe layers grown by metalorganic vapor phase epitaxy Nishio M, Hayashida Y, Saito K, Tanaka T, Guo QX