1 - 8 |
Measurements of surface attachment kinetics for faceted ice crystal growth Libbrecht KG, Rickerby ME |
9 - 16 |
Crystal shape 2D modeling for transient CZ silicon crystal growth Sabanskis A, Bergfelds K, Muiznieks A, Schrock T, Krauze A |
17 - 21 |
Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN Kuyyalil J, Thanh TN, Quinci T, Almosni S, Letoublon A, Rohel T, Bertru N, Le Corre A, Durand O, Cornet C |
22 - 27 |
HPHT synthesis of boron and nitrogen co-doped strip-shaped diamond using powder catalyst with additive h-BN Sun SS, Jia XP, Zhang ZF, Li Y, Yan BM, Liu XB, Ma HA |
28 - 31 |
Investigation of scintillation and luminescence properties of cerium doped Rb2LiGdCl6 single crystals Rooh G, Kim HJ, Park H, Kim S |
32 - 36 |
High quality AlGaN grown on ELO AlN/sapphire templates Zeimer U, Kueller V, Knauer A, Mogilatenko A, Weyers M, Kneissl M |
37 - 42 |
Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells Li JY, Prakash RR, Jiptner K, Chen J, Miyamura Y, Harada H, Kakimoto K, Ogura A, Sekiguchi T |
43 - 50 |
Crystal Growth of Hen Egg-White Lysozyme (HEWL) under Various Gravity Conditions Pan WC, Xu J, Tsukamoto K, Koizumi M, Yamazaki T, Zhou R, Li A, Fu YY |
51 - 58 |
Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates Won D, Redwing JM |
59 - 63 |
Theory of controllable shape of quantum structures upon droplet epitaxy Li XL |
64 - 65 |
Validity of commonly used formula of nucleation work for bubble nucleation Mori A |
66 - 71 |
Formation of Si grains from a NaSi melt prepared by reaction of SiO2 and Na Yamane H, Morito H, Uchikoshi M |
72 - 77 |
A three-dimensional cellular automata model coupled with finite element method and thermodynamic database for alloy solidification Zhao Y, Qin RS, Chen DF |
78 - 81 |
Epitaxial growth of cubic Mg0.45Zn0.55O thin films on SrTiO3 (001) substrate with MgO buffer layer Zhu DP, Cai L, He SM, Liu GL, Yan SS, Cao Q, Chen YX, Kang SS, Mei LM, Gao S, Lian J |
82 - 87 |
Epitaxial growth of nonpolar and polar ZnO on gamma-LiAlO2 (100) substrate by plasma-assisted molecular beam epitaxy Chen YM, Huang TH, Yan T, Chang L, Chou MMC, Ploog KH, Chiang CM |
88 - 95 |
Growth of SiC by PVT method in the presence of cerium dopant Racka K, Tymicki E, Grasza K, Kowalik IA, Arvanitis D, Pisarek M, Kosciewicz K, Jakiela R, Surma B, Diduszko R, Teklinska D, Mierczyk J, Krupka J |
96 - 100 |
Single crystal growth of the pyrochlores R2Ti2O7 (R=rare earth) by the optical floating-zone method Li QJ, Xu LM, Fan C, Zhang FB, Lv YY, Ni B, Zhao ZY, Sun XF |
101 - 106 |
Effects of cyclic structure inhibitors on the morphology and growth of tetrahydrofuran hydrate crystals Li SJ, Wang YH, Lang XM, Fan SS |
107 - 111 |
Calculation of solid-liquid interfacial free energy of Cu by two different methods Zhou HG, Lin X, Wang M, Huang WD |
112 - 117 |
Facile fabrication of CdS nanorod arrays on the transparent conducting substrates and their photoelectrochemical properties Sun ML, Fu WY, Li Q, Yin GC, Chi KL, Zhou XM, Ma JW, Yang LH, Mu YN, Chen YL, Yang HB |
118 - 122 |
Volume term of work of critical nucleus formation in terms of chemical potential difference relative to equilibrium one Mori A |
123 - 126 |
Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation Yamaguchi T, Uematsu N, Araki T, Honda T, Yoon E, Nanishi Y |
127 - 135 |
Influence of maleic acid copolymers on calcium orthophosphates crystallization at low temperature Pelin IM, Popescu I, Suflet DM, Aflori M, Bulacovschi V |
136 - 142 |
Crystallization and assembling behavior of calcium carbonate controlled by Ca-organic fibers Chen AL, Ma PY, Fu ZY, Wu Y, Kong W |
143 - 146 |
Crystallographic orientation dependence of dielectric response in lead strontium titanate thin films Li K, Remiens D, Costecalde J, Sama N, Du G, Li T, Dong XL, Wang GS |
147 - 152 |
Melt zone growth of Ge-rich Ge1-xSix bulk crystals Kostylev I, Woodacre JK, Lee YP, Klages P, Labrie D |
153 - 159 |
Recrystallization mechanism of grain refinement in hypercooled single phase alloys Xu XL, Chen YZ, Liu F |
160 - 163 |
A study on segregation layers of Bi4Si3O12 crystal grown by the Bridgman method Xiong W, Zhou Y, Guo F, Chen L, Luo C, Yuan H |
164 - 169 |
Dissolution of sodium chlorate crystals in supersaturated solutions Malivuk DA, Zekic AA, Mitrovic MM, Misailovic BM |
170 - 177 |
Crystal growth and thermoelectric properties of CaMn0.98Nb0.02O3-delta Alfaruq DS, Aguirre MH, Otal EH, Populoh S, Karvonen L, Yoon S, Lu Y, Deng G, Ebbinghaus SG, Weidenkaff A |
178 - 183 |
A study of phase stability in the Lu2O3-Al2O3 system Petrosyan AG, Popova VF, Ugolkov VL, Romanov DP, Ovanesyan KL |
184 - 191 |
Growth mechanisms in semipolar (2 0 (2)over-bar 1) and nonpolar m-plane (1 0 (1)over-bar 0) AlGaN/GaN structures grown by PAMBE under N-rich conditions Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C |
192 - 196 |
Si growth by directional solidification of Si-Sn alloys to produce solar-grade Si Ma XD, Yoshikawa T, Morita K |
197 - 202 |
Synthesis, growth, characterization and crystal structure of zinc cadmium thiourea complex Zn0.625Cd1.375(CS(NH2)(2))(9.)4(SO4) Ramasamy G, Meenakshisundaram S |
203 - 211 |
Investigation of grain boundary grooves at the solid-liquid interface during directional solidification of multi-crystalline silicon: in situ characterization by X-ray imaging Tandjaoui A, Mangelinck-Noel N, Reinhart G, Billia B, Lafford T, Baruchel J |
212 - 216 |
Phase formation in double oxide films of Hf-La-O system Smirnova TP, Yakovkina LV, Borisov VO |
217 - 220 |
Influence of temperature on the thermal transport properties of a TlGaSSe compound Al Garni SE |