Journal of Crystal Growth

Journal of Crystal Growth, Vol.378 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (156 articles)

3 - 4	The 17th International Conference on Molecular Beam Epitaxy Preface Akimoto K, Suemasu T, Okumura H
5 - 7	Size-dependent contact angle of Ga droplets on GaAs Jo M, Mano T, Sakuma Y, Sakoda K
8 - 12	Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface Kanisawa K
13 - 16	Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001) Ito T, Hirai K, Akiyama T, Nakamura K
17 - 20	Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layers Novikov SV, Powell REL, Kent AJ, Foxon CT
21 - 24	Ab initio-based approach to initial incorporation of Bi on vertical bar GaAs(001)-c(4 x 4)alpha surface Murase I, Akiyama T, Nakamura K, Ito T
25 - 28	Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates Thanh TN, Robert C, Giudicelli E, Letoublon A, Cornet C, Ponchet A, Rohel T, Balocchi A, Micha JS, Perrin M, Loualiche S, Marie X, Bertru N, Durand O, Le Corre A
29 - 33	Ab initio-based approach to incorporation of N atoms on GaAs(001) surfaces Sugitani T, Akiyama T, Nakamura K, Ito T
34 - 36	In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001) Takahasi M, Nakata Y, Suzuki H, Ikeda K, Kozu M, Hu W, Ohshita Y
37 - 40	Direct stress measurement of Si(111) 7 x 7 reconstruction Asaoka H, Yamazaki T, Yokoyama Y, Yamaguchi K
41 - 43	As flux dependence on RHEED transients during InAs quantum dot growth Shimomura K, Shirasaka T, Tex DM, Kamiya I
44 - 46	In situ STM observations of step structures in a trench around an InAs QD at 300 degrees C Toujyou T, Otsu T, Wakamatsu D, Kurisaka M, Konishi T, Tsukamoto S
47 - 49	Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy Hasegawa S, Shimoi T, Asahi H
50 - 52	Incorporation of Mn atoms into the GaAs(110) surface Hirayama M, Tsukamoto S
53 - 56	Self-assembly of Ga droplets attached to GaAs quantum dots Elborg M, Noda T, Mano T, Jo M, Sakuma Y, Sakoda K
57 - 60	Photocapacitance study of MBE grown GaInNAsSb thin film solar cells Islam MM, Miyashita N, Ahsan N, Sakurai T, Akimoto K, Okada Y
61 - 64	Photoluminescence dynamics of excitons at the mini-Brillouin-zone edge in a GaAs/AlAs superlattice Nakayama M, Yamashita T, Hasegawa T
65 - 68	Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors Gu Y, Zhang YG, Wang K, Fang X, Li C, Zhou L, Li AZ, Li H
69 - 72	Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-mu m-wavelength region Shono T, Mizuta S, Kawamura Y
73 - 76	Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy Yoshimoto M, Itoh M, Tominaga Y, Oe K
77 - 80	Problems in low-temperature grown polycrystalline InAs layers on glass and their relief by inserting GaSbAs buffer layers Kajikawa Y, Okuzako T, Matsui Y
81 - 84	Crystalline and electrical characteristics of C-60 uniformly doped GaAs layers Nishinaga J, Horikoshi Y
85 - 87	Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates Jin RG, Yagi S, Hijikata Y, Kuboya S, Onabe K, Katayama R, Yaguchi H
88 - 91	MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures Mendez-Garcia VH, Gonzalez-Fernandez JV, Espinosa-Vega LI, Diaz T, Romano R, Rosendo E, Gallardo S, Vazquez-Cortes D, Shimomura S
92 - 95	Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance Law JJM, Carter AD, Lee S, Huang CY, Lu H, Rodwell MJW, Gossard AC
96 - 99	Growth of dilute BGaP alloys by molecular beam epitaxy Urakami N, Fukami F, Sekiguchi H, Okada H, Wakahara A
100 - 104	Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructures Zamora-Peredo L, Cortes-Mestizo IE, Garcia-Gonzalez L, Hernandez-Torres J, Vazquez-Cortes D, Shimomura S, Cisneros-de la Rosa A, Mendez-Garcia VH
105 - 108	Polarized Raman spectroscopy of corrugated MBE grown GaAs ((6)over-bar(3)over-bar(1)over-bar) homoepitaxial films Espinosa-Vega LI, Rodriguez AG, Cruz-Hernandez E, Martinez-Veliz I, Rojas-Ramirez J, Ramirez-Lopez M, Nieto-Navarro J, Lopez-Lopez M, Mendez-Garcia VH
109 - 112	Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars Richter M, Uccelli E, Taboada AG, Caimi D, Daix N, Sousa M, Marchiori C, Siegwart H, Falub CV, von Kanel H, Isa F, Isella G, Pezous A, Dommann A, Niedermann P, Fompeyrine J
113 - 116	Sb irradiation effect on growth of GaAs thin film on Si (111) substrate Morohara O, Geka H, Moriyasu Y, Kuze N
117 - 120	Growth of heterostructures on InAs for high mobility device applications Contreras-Guerrero R, Wang S, Edirisooriya M, Priyantha W, Rojas-Ramirez JS, Bhuwalka K, Doornbos G, Holland M, Oxland R, Vellianitis G, Van Dal M, Duriez B, Passlack M, Diaz CH, Droopad R
121 - 124	Type-II InAs/GaSb superlattice grown on InP substrate Miura K, Iguchi Y, Kawamura Y
125 - 128	Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy Semtsiv MP, Aleksandrova A, Elagin M, Monastyrskyi G, Kischkat JF, Flores YV, Masselink WT
129 - 133	Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111) substrate Toyota H, Okabe A, Endoh T, Jinbo Y, Uchitomi N
134 - 136	InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm Gozu S, Mozume T, Kuwatsuka H, Ishikawa H
137 - 140	Growth and characterization of GaDyN/GaN double barrier structures Sano M, Zhou YK, Emura S, Hasegawa S, Asahi H
141 - 144	Growth of metamorphic InGaP layers on GaAs substrates Yan JY, Gong Q, Yue L, Liu QB, Cheng RH, Cao CF, Wang Y, Wang SM
145 - 149	A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy Li H, Liu S, Cellek OO, Ding D, Shen XM, Steenbergen EH, Fan J, Lin ZY, He ZY, Zhang Q, Webster PT, Johnson SR, Ouyang L, Smith DJ, Zhang YH
150 - 153	Electroluminescence of GaNAs/GaAs MQWs p-i-n junctions grown by RF-MBE using modulated nitrogen radical beam source Ohta N, Arimoto K, Shiraga M, Ishii K, Inada M, Yanai S, Nakai Y, Akiyama H, Mochizuki T, Takahashi T, Takahashi N, Miyagawa H, Tsurumachi N, Nakanishi S, Koshiba S
154 - 157	Characteristics of CuGaSe2 layers grown on GaAs substrates Fujita M, Kawaharazuka A, Horikoshi Y
158 - 161	Growth mechanism of CuZnInSe2 thin films grown by molecular beam epitaxy Tseng YH, Yang CS, Wu CH, Chiu JW, De Yang M, Wu CH
162 - 164	Characterization of Cu(In,Ga)Se-2 grown by MBE by two-wavelength excited photoluminescence spectroscopy Gupta A, Hiraoka N, Sakurai T, Yamada A, Ishizuka S, Niki S, Akimoto K
165 - 167	Electronic and transport properties of Eu-substituted infinite-layer strontium ferrite thin films Chikamatsu A, Matsuyama T, Katayama T, Hirose Y, Kumigashira H, Oshima M, Fukumura T, Hasegawa T
168 - 171	Rock-salt Zn1-xMgxO epilayer having high Zn content grown on MgO (100) substrate by plasma-assisted molecular beam epitaxy Lu CYJ, Yan T, Chang L, Ploog KH, Chou MMC, Chiang CM
172 - 176	Epitaxial growth of nonpolar ZnO on MgO (100) substrate by molecular beam epitaxy Lu CYJ, Chang L, Ploog KH, Chou MMC
177 - 179	Growth and application of epitaxial heterostructures with polymorphous rare-earth oxides Dargis R, Clark A, Arkun E, Roucka R, Smith R, Demkov AA, Lebby M
180 - 183	Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy Chen CY, Yang CY, Chyi JI, Wu CH
184 - 188	Multi-source MBE with high-precision rate control system as a synthesis method sui generis for multi-cation metal oxides Yamamoto H, Krockenberger Y, Naito M
189 - 192	Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy Nakamura K, Toh K, Baba M, Khan MA, Du W, Toko K, Suemasu T
193 - 197	Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy Baba M, Toh K, Toko K, Hara KO, Usami N, Saito N, Yoshizawa N, Suemasu T
198 - 200	Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy Koike S, Toh K, Baba M, Toko K, Hara KO, Usami N, Saito N, Yoshizawa N, Suemasu T
201 - 204	Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells Khan MA, Hara KO, Nakamura K, Du WJ, Baba M, Toh K, Suzuno M, Toko K, Usami N, Suemasu T
205 - 207	Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layers Watanabe Y, Oshima R, Sakata I, Matsubara K, Sakarnoto I
208 - 211	Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy Chien KF, Hsu WL, Tzou AJ, Lin YC, Chou WC, Lee L, Chia CH, Yang CS
212 - 217	Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates Arimoto K, Sakai S, Furukawa H, Yamanaka J, Nakagawa K, Usami N, Hoshi Y, Sawano K, Shiraki Y
218 - 221	Optical properties of Zn1-xMnxO thin films grown by molecular beam epitaxy Chien KF, Yang YL, Tzou AJ, Chou WC
222 - 225	Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dots Lee L, Fan WC, Chien KF, Tzou AJ, Chou WC
226 - 229	High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications Oshima R, Watanabe Y, Yamanaka M, Kawanami H, Sakamoto I, Matsubara K, Sakata I
230 - 232	Change of Si(110) reconstructed structure by Ge nanocluster formation Yokoyama Y, Yamazaki T, Asaoka H
233 - 237	Growth of II-VI ZnSe/CdSe nanowires for quantum dot luminescence Bellet-Amalric E, Elouneg-Jamroz M, Rueda-Fonseca P, Bounouar S, Den Hertog M, Bougerol C, Andre R, Genuist Y, Poizat JP, Kheng K, Cibert J, Tatarenko S
238 - 242	Interface properties of MBE grown epitaxial oxides on GaAs Contreras-Guerrero R, Edirisooriya M, Noriega OC, Droopad R
243 - 245	Solid phase epitaxy of EuTiO3 thin films on SrTiO3 (100) substrates with different oxygen contents Shimamoto K, Hirose Y, Nakao S, Fukumura T, Hasegawa T
246 - 250	Effects of different substrate surface modifications on the epitaxial ZnO/Si Wang P, Jin CL, Zhan HH, Chen XH, Xu FC, Zhou YH, Wang HQ, Kang JY
251 - 253	On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique Sawano K, Hoshi Y, Nagakura S, Arimoto K, Nakagawa K, Usami N, Shiraki Y
254 - 258	Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy Tetzlaff D, Wietler TF, Bugiel E, Osten HJ
259 - 262	Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells Tanaka T, Nagao Y, Mochinaga T, Saito K, Guo QX, Nishio M, Yu KM, Walukiewicz W
263 - 265	Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devices Kobayashi T, Nomura I, Murakami K, Kishino K
266 - 269	MBE growth and characterization of a II-VI distributed Bragg reflector and microcavity lattice-matched to MgTe Rousset JG, Kobak J, Slupinski T, Jakubczyk T, Stawicki P, Janik E, Tokarczyk M, Kowalski G, Nawrocki M, Pacuski W
270 - 273	On the structural properties of MgS-rich II-VI-based microcavities Klembt S, Frank K, Qian G, Klein T, Rosenauer A, Hommel D, Kruse C
274 - 277	Ultra low density of CdTe quantum dots grown by MBE Kobak J, Rousset JG, Rudniewski R, Janik E, Slupinski T, Kossacki P, Golnik A, Pacuski W
278 - 282	MBE fabrication of III-N-based laser diodes and its development to industrial system Skierbiszewski C, Siekacz M, Turski H, Muziol G, Sawicka M, Perlin P, Wasilewski ZR, Porowski S
283 - 286	Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy Agrawal M, Dharmarasu N, Radhakrishnan K, Ravikiran L
287 - 290	Cubic GaN quantum dots embedded in zinc-blende AlN microdisks Burger M, Kemper RM, Bader CA, Ruth M, Declair S, Meier C, Forstner J, As DJ
291 - 294	Growth of cubic GaN on 3C-SiC/Si (001) nanostructures Kemper RM, Hiller L, Stauden T, Pezoldt J, Duschik K, Niendorf T, Maier HJ, Meertens D, Tillmann K, As DJ, Lindner JKN
295 - 298	Study of the pseudo-(1 x 1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE Cruz-Hernandez E, Ramirez-Lopez M, Perez-Caro M, Mani-Gonzalez PG, Herrera-Gomez A, Gorbatchev AY, Lopez-Lopez M, Mendez-Garcia VH
299 - 302	Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111) Peta KR, Lee ST, Kim MD, Oh JE, Kim SG, Kim TG
303 - 306	Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy Naritsuka S, Lin CH, Uchiyama S, Maruyama T
307 - 309	RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer Kakuda M, Morikawa S, Kuboya S, Katayama R, Yaguchi H, Onabe K
310 - 313	Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE Higashi K, Hasegawa S, Sano S, Zhou YK, Asahi H
314 - 318	Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001) Sano S, Hasegawa S, Mitsuno Y, Higashi K, Ishimaru M, Sakurai T, Ohta H, Asahi H
319 - 322	Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE Nechaev DV, Aseev PA, Jmerik VN, Brunkov PN, Kuznetsova YV, Sitnikova AA, Ratnikov VV, Ivanov SV
323 - 328	Molecular beam epitaxy growth of InSb1-xBix thin films Song YX, Wang SM, Roy IS, Shi PX, Hallen A, Lai ZH
329 - 332	Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers Mohamed MA, Lam PT, Otsuka N
333 - 336	Graphene films grown at low substrate temperature and the growth model by using MBE technique Lin MY, Guo WC, Wu MH, Wang PY, Lee SC, Lin SY
337 - 341	Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film Lee S, Lee H, Yoo T, Lee S, Liu X, Furdyna JK
342 - 346	Epitaxial growth of ferromagnetic CoxFe4-xN thin films on SrTiO3 (001) and magnetic properties Sanai T, Ito K, Toko K, Suemasu T
347 - 350	Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiophene-dimer films Sakai T, Matsumoto Y, Shibamoto K, Osuga H, Uno K, Tanaka I
351 - 355	Crystal growth of magnetic dihydride GdxY1-xH2 for generation of spin current Sakuraba T, Hirama H, Sakai M, Honda Z, Hayakawa M, Okoshi T, Kitajima A, Oshima A, Higuchi K, Hasegawa S
356 - 360	Enhancement of hydrogen uptake for Y and Gd films by thin Ni surface overlayers Hirama H, Hayakawa M, Okoshi T, Sakai M, Higuchi K, Kitajima A, Oshima A, Hasegawa S
361 - 364	Planar Hall effect in a single GaMnAs film grown on Si substrate Won J, Shin J, Lee S, Lee H, Yoo T, Lee S, Liu X, Furdyna JK
365 - 367	Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in beta-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy Funase Y, Suzuno M, Toko K, Suemasu T
368 - 371	Fabrication and characterization of DH-alpha 6T monolayer film on silicon dioxide Ye RB, Fujinaka Y, Ohata K, Baba M
372 - 375	Growth of high-quality CuCl thin films by a technique involving electron-beam irradiation Ichimiya M, Phuong LQ, Ashida M, Itoh T
376 - 380	Growth condition dependence of Ge-doped beta-FeSi2 epitaxial film by molecular beam epitaxy Noda K, Terai Y, Fujiwara Y
381 - 384	Control of magnetic anisotropy in (Ga,Mn)As with etching depth of specimen boundaries Hashimoto Y, Iye Y, Katsumoto S
385 - 387	Spin-injection into epitaxial graphene on silicon carbide Konishi K, Cui ZX, Hiraki T, Yoh KJ
388 - 392	Influence of hydrogen incorporation on texture and grain size in YH2 films Okoshi T, Hayakawa M, Hirama H, Sakai M, Higuchi K, Kitajima A, Oshima A, Hasegawa S
393 - 396	Dynamics of electron-spin injection in a heterovalent GaAs/AlGaAs/ZnMnSe structure with a coupled double quantum well of GaAs/AlGaAs Kuno Y, Sasaki T, Kiba T, Kaibyshev VK, Liaci F, Toropov AA, Ivanov SV, Murayama A
397 - 399	STM observation of MnAs initial growth surface on GaAs(001)-c(4 x 4)alpha and 6 x 6 reconstructions Hiraoka M, Kaku S, Yoshino J
400 - 403	Suppression of Andreev current due to transverse current flow in an InAs two-dimensional electrons Takahashi Y, Hashimoto Y, Iye Y, Katsumoto S
404 - 409	Molecular beam epitaxial growth of graphene using cracked ethylene Maeda F, Hibino H
410 - 414	Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRD Oomae H, Irizawa S, Jinbo Y, Toyota H, Kambayashi T, Uchitomi N
415 - 417	Effect of Ag-doped bathocuproine on the recombination properties of exciton in fullerene Wang SH, Sakurai T, Komatsu K, Akimoto K
418 - 421	Thickness dependence of magnetic anisotropy in MnSb epitaxial layers Nishizawa N, Munekata H
422 - 425	Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers Osaka Y, Tanabe H, Yamada K, Yamaguchi K
426 - 429	Temperature-dependent photoluminescence and carrier dynamics of standard and coupled type-II GaSb/GaAs quantum rings Lin WH, Wang KW, Lin SY, Wu MC
430 - 434	In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy Sugaya T, Oshima R, Matsubara K, Niki S
435 - 438	InGaAs quantum-dot-in-ring structure by droplet epitaxy Boonpeng P, Kiravittaya S, Thainoi S, Panyakeow S, Ratanathammaphan S
439 - 441	Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy Gotoh K, Oshima R, Sugaya T, Sakata I, Matsubara K, Kondo M
442 - 445	Structural properties of ultra-low density nanoholes for the generation of well-separated GaAs quantum dots Sonnenberg D, Graf A, Paulava V, Hansen W, Heyn C
446 - 449	GaAs nanopillars by self-assembled droplet etching Heyn C, Sonnenberg D, Bartsch T, Wetzel A, Kerbst J, Hansen W
450 - 453	Fabrication of low-density self-assembled InAs quantum dots on InP(311)B substrate by molecular beam epitaxy Akahane K, Yamamoto N
454 - 458	RF-MBE growth of cubic InN nano-scale dots on cubic GaN Suzuki J, Orihara M, Yagi S, Hijikata Y, Yaguchi H
459 - 462	Molecular beam epitaxial growths of high-optical-gain InAs quantum dots on GaAs for long-wavelength emission Nishi K, Kageyama T, Yamaguchi M, Maeda Y, Takemasa K, Yamamoto T, Sugawara M, Arakawa Y
463 - 465	Observation of optical anisotropy of highly uniform InAs quantum dots Uemura M, Ohta J, Yamaguchi R, Yamaguchi K, Tackeuchi A
466 - 469	The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxy Tzou AJ, Chien KF, Lai HY, Ku JT, Lee L, Fan WC, Chou WC
470 - 474	Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains Hakkarainen TV, Schramm A, Luna E, Tommila J, Guina M
475 - 479	Growth of GaSb quantum dots on GaAs (311)A Kawazu T, Noda T, Mano T, Sakuma Y, Sakaki H
480 - 484	Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy Zander M, Nishinaga J, Horikoshi Y
485 - 488	Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers Kitada T, Ueyama H, Morita K, Isu T
489 - 492	Self-organization and photoluminescence properties of Pb0.7Sn0.3Te quantum dots embedded in a CdTe matrix Koike K, Iwamoto A, Yano M
493 - 496	Surface/interface-related optical properties in Si nanodisks fabricated by neutral-beam etching using bio-templates Kiba T, Suzaki K, Li H, Igarashi M, Samukawa S, Murayama A
497 - 500	Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy Bietti S, Cavigli L, Minari S, Adorno S, Isella G, Vinattieri A, Gurioli M, Sanguinetti S
501 - 505	Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05 mu m using In-flush technique for broadband near-infrared light source Hino Y, Ozaki N, Ohkouchi S, Ikeda N, Sugimoto Y
506 - 510	Controlled wurtzite inclusions in self-catalyzed zinc blende III-V semiconductor nanowires Rieger T, Lepsa MI, Schapers T, Grutzmacher D
511 - 514	Fabrication and characterization of a delta-dope InAs/InP core shell nanowire transistor Cui ZX, Ishikura T, Jabeen F, Harmand JC, Yoh K
515 - 518	Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy Adorno S, Bietti S, Sanguinetti S
519 - 523	InP1-xAsx quantum dots in InP nanowires: A route for single photon emitters Harmand JC, Jabeen F, Liu LS, Patriarche G, Gauthron K, Senellart P, Elvira D, Beveratos A
524 - 528	Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns Chokamnuai T, Rattanadon P, Thainoi S, Panyakeow S, Kanjanachuchai S
529 - 531	Fabrication of InAs nanoscale rings by droplet epitaxy Noda T, Jo M, Mano T, Kawazu T, Sakaki H
532 - 536	Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy Dheeraj DL, Munshi AM, Christoffersen OM, Kim DC, Signorello G, Riel H, van Helvoort ATJ, Weman H, Fimland BO
537 - 541	Infrared emitting property and spherical symmetry of colloidal PbS quantum dots Nakashima S, Kikushima K, Mukai K
542 - 545	Thiol-stabilized PbS quantum dots with stable luminescence in the infrared spectral range Nakashima S, Hoshino A, Cai JJ, Mukai K
546 - 548	Phase coherent transport in GaAs/AlGaAs core-shell nanowires Lucot D, Jabeen F, Ramdani MR, Patriarche G, Faini G, Mailly D, Harmand JC
549 - 552	Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source Ohkouchi S, Kumagai N, Watanabe K, Iwamoto S, Arakawa Y
553 - 557	Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3 mu m by using quantum dot bi-layer for broadband light source Ozaki N, Nakatani Y, Ohkouchi S, Ikeda N, Sugimoto Y, Asakawa K, Clarke E, Hogg RA
558 - 561	Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperature Kumagai N, Ohkouchi S, Watanabe K, Iwamoto S, Arakawa Y
562 - 565	Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique Kwoen J, Watanabe K, Iwamoto S, Arakawa Y
566 - 570	InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy Banerjee A, Frost T, Jahangir S, Stark E, Bhattacharya P
571 - 575	Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature Lin WH, Wang KW, Lin SY, Wu MC
576 - 578	InGaP solar cells fabricated using solid-source molecular beam epitaxy Sugaya T, Takeda A, Oshima R, Matsubara K, Niki S, Okano Y
579 - 582	Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4 mu m Zhou L, Gu Y, Zhang YG, Wang K, Fang X, Cao YY, Li AZ, Li H
583 - 586	Broadband InGaAs quantum dot-in-a-well solar cells of p-type wells Tzeng TE, Chuang KY, Lay TS, Chang CH
587 - 590	The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 mu m Li YY, Li AZ, Gu Y, Zhang YG, Li HSBY, Wang K, Fang X
591 - 595	MBE grown Ga2O3 and its power device applications Sasaki K, Higashiwaki M, Kuramata A, Masui T, Yamakoshi S
596 - 599	InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy Chen JX, Zhou Y, Xu ZC, Xu JJ, Xu QQ, Chen HL, He L
600 - 603	High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing Ahn W, Seok O, Song SM, Han MK, Ha MW
604 - 606	The investigation of GaInP solar cell grown by all-solid MBE Dai P, Lu SL, Zhu YQ, Ji L, He W, Tan M, Yang H, Arimochi M, Yoshida H, Uchida S, Ikeda M
607 - 610	Highly strained photovoltaic dual-channel intersubband photodetectors grown by gas-source MBE Elagin M, Schulz P, Elagin M, Semtsiv MP, Kirmse H, Mogilatenko A, Masselink WT
611 - 613	Uncooled InGaSb photovoltaic infrared detectors for gas sensing Katsumata T, Nishimura R, Yamaoka K, Camargo EG, Morishita T, Ueno K, Tokuo S, Goto H, Kuze N
614 - 617	Correlation of the MBE growth temperature, material quality, and performance of quantum cascade lasers Monastyrskyi G, Aleksandrova A, Elagin M, Semtsiv MP, Masselink WT, Bryksa V
618 - 621	InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy Teng T, Xu AH, Ai LK, Sun H, Qi M
622 - 626	Microdisk cavity laser with InGaAs quantum dots on AlAs/GaAs distributed Bragg reflector Hsing JY, Tzeng TE, Kuo MY, Lay TS, Shih MH
627 - 630	Growth of high-density 1.06-mu m InGaAs/GaAs quantum dots for high gain lasers by molecular beam epitaxy Watanabe K, Akiyama T, Yokoyama Y, Takemasa K, Nishi K, Tanaka Y, Sugawara M, Arakawa Y
631 - 635	All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides Tokranov V, Madisetti S, Yakimov M, Nagaiah P, Faleev N, Oktyabrsky S
636 - 639	Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature Xu XJ, Usami N, Maruizumi T, Shiraki Y