1 - 4 |
Morphology evolution and physical properties of Bi2Mn4O10 synthesized by hydrothermal method Zhang WJ, Chen J, Wang Y, Fan LL, Deng JX, Yu RB, Xing XR |
5 - 13 |
Implementation of an antitrapping current for a multicomponent multiphase-field ansatz Carre A, Bottger B, Apel M |
14 - 17 |
Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR, Smith DJ |
18 - 22 |
Liquid phase growth of bulk GaSe crystal implemented with the temperature difference method under controlled vapor pressure Onai T, Nagai Y, Dezaki H, Oyama Y |
23 - 27 |
Low temperature growth of GaAs1-yBiy epitaxial layers Forghani K, Anand A, Mawst LJ, Kuech TF |
28 - 33 |
Evolution of mesostructures in titania upon template loading and calcination Xiong BY, Mao WF, Fang PF, He CQ |
34 - 38 |
The role of solvation effects in the growth of TCNQ-based charge-transfer salts Rosner B, Spath A, Fink RH |
39 - 42 |
Growth of potassium tantalate (KTaO3) crystals by directional solidification Taishi T, Takenaka T, Hosokawa K, Bamba N, Hoshikawa K |
43 - 50 |
Combined-convection segregation coefficient and related Nusselt numbers Ostrogorsky AG |
51 - 54 |
Phosphorus diffusion gettering of substitutional metal contaminants at a small-angle grain boundary in n-type silicon: The case of gold Jiang TT, Yu XG, Fan RX, Gu X, Yang DR |
55 - 60 |
Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD Yazdanfar M, Stenberg P, Booker ID, Ivanov IG, Kordina O, Pedersen H, Janzen E |
61 - 67 |
Vapor phase surface preparation (etching) of 4H-SiC substrates using tetrafluorosilane (SiF4) in a hydrogen ambient for SiC epitaxy Rana T, Chandrashekhar MVS, Sudarshan TS |
68 - 71 |
Local nonequilibrium solute trapping model for non-planar interface Li S, Sobolev SL |
72 - 77 |
Optical and transport properties of GaGeTe single crystals Kucek V, Drasar C, Navratil J, Benes L, Lostak P |
78 - 84 |
Synthesis of Sr-doped LaP3O9 single crystals and dense polycrystalline membranes in condensed phosphoric acid solutions Onishi T, Hatada N, Kuramitsu A, Uda T |
85 - 92 |
The growth of low resistivity, heavily Al-doped 4H-SiC thick epilayers by hot-wall chemical vapor deposition Ji SY, Kojima K, Ishida Y, Saito S, Kato T, Tsuchida H, Yoshida S, Okumura H |
93 - 98 |
Record high-aspect-ratio GaAs nano-grating lines grown by Hydride Vapor Phase Epitaxy (HVPE) Gil E, Andre Y, Ramdani MR, Fontaine C, Trassoudaine A, Castelluci D |
99 - 105 |
Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask Amilusik M, Sochacki T, Lucznik B, Bockowski M, Sadovyi B, Presz A, Dziecielewski I, Grzegory I |
106 - 110 |
Epitaxial composition-graded perovskite films grown by a dual-beam pulsed laser deposition method Sakai J, Autret-Lambert C, Sauvage T, Courtois B, Wolfman J, Gervais F |
111 - 117 |
Growth, optical, thermal, mechanical and dielectric characterization of brucinium hydrogen maleate Gayathri K, Krishnan P, Sivakumar N, Sangeetha V, Anbalagan G |
118 - 122 |
Pseudo-hexagonal in-plane alignment of rutile (100)Nb:TiO2 on hexagonal (0001)Al2O3 plane Wang C, Dho J, Lee SG |
123 - 129 |
Static electric field enhanced recrystallization of copper phthalocyanine thin film during annealing Parhi AP, Iyer SSK |
130 - 137 |
Anglesite (PbSO4) epitactic overgrowths and substrate-induced twinning on anhydrite (CaSO4) cleavage surfaces Morales J, Astilleros JM, Fernandez-Diaz L, Alvarez-Lloret P, Jimenez A |
138 - 142 |
Surfactant effects on GaAs-Ge heterostructures Karlina LB, Vlasov AS, Ber BY, Kazanthev DY, Marukhina EP |
143 - 147 |
Luminescence properties of CsI crystals grown from the melt treated by metals-getters Cherginets VL, Rebrova TP, Datsko YN, Kosinov NN, Shevchenko EE, Pedash VY |
148 - 152 |
Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate Suzuki H, Ito D, Fukuyama A, Ikari T |
153 - 156 |
Spinodal decomposition ranges of wurtzite and zinc blende (ZnBxO1-x)-O-VI (B-VI = S, Se, Te) alloys Elyukhin VA |
157 - 162 |
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster Quinci T, Kuyyalil J, Thanh TN, Wang YP, Almosni S, Letoublon A, Rohel T, Tavernier K, Chevalier N, Dehaese O, Boudet N, Berar JF, Loualiche S, Even J, Bertru N, Le Corre A, Durand O, Cornet C |
163 - 168 |
Hydrothermally controlled growth and magnetic properties of multi-morphology manganese oxide (RMnO3, R = Ca, Sr, Ba) nano- and microcrystals Zhang JH, Yu DB, Du K, Wang F, Zhao DP, Wang Y, Chen LL, Kong MG, Zou JW |
169 - 175 |
The relationship between crystal morphology and XRD peak intensity on CaSO4 center dot 2H(2)O Inoue M, Hirasawa I |
176 - 181 |
Noncentrosymmetric mixed-cation borate: Crystal growth, structure and optical properties of Cs2Ca[B4O5(OH)(4)](2)center dot 8H(2)O Huang HW, He R, Yao WJ, Lin ZS, Chen CT, Zhang YH |
182 - 186 |
Highly crystalline porous magnetite and vacancy-ordered maghemite microcrystals of rhombohedral habit Ercuta A, Chirita M |
187 - 196 |
The constant composition method for crystallization of calcium carbonate at constant supersaturation Beck R, Seiersten M, Andreassen JP |
197 - 204 |
Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition Hoshi T, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Tateno K |
205 - 208 |
Modification of oxygen content in LiF crystals grown by skull method Taranyuk V, Gektin A, Shiran N, Shlyakhturov V, Gridin S, Boiaryntseva I, Sofronov D |
209 - 217 |
Solid-liquid interfacial energy of solid succinonitrile solution in equilibrium with succinonitrile-neopentylglycol eutectic liquid Karadag SB, Altintas Y, Ozturk E, Aksoz S, Keslioglu K, Marasli N |
218 - 223 |
Synthesis, growth and characterization of 4-methyl anilinium phenolsulfonate single crystal Jovita JV, Boopathi K, Ramasamy P, Ramanand A, Sagayaraj P |
224 - 227 |
Microstructure of the yttria doped Al2O3-ZrO2 eutectic fibers grown by the laser heated pedestal growth (LHPG) method Laidoune A, Lebbou K, Bahloul D |
228 - 235 |
Crystal growth, structural, crystalline perfection, optical and mechanical properties of Nd3+ doped sulfamic acid (SA) single crystals Shkir M, Riscob B, Ganesh V, Vijayan N, Gupta R, Plaza JL, Dieguez E, Bhagavannarayana G |
236 - 240 |
Structural and compositional properties of CZTS thin films formed by rapid thermal annealing of electrodeposited layers Lehner J, Ganchev M, Loorits M, Revathi N, Raadik T, Raudoja J, Grossberg M, Mellikov E, Volobujeva O |
241 - 246 |
Synthesis and studies of a novel [(Tetrathiafulvalene)-(2-Amino-6-nitrobenzothiazole)(2)] co-crystal Boyineni A, Jayanty S, Pallepogu R |
247 - 255 |
A Brownian model for crystal nucleation Duran-Olivencia MA, Otalora F |
256 - 260 |
Al-enhanced N incorporation in GaNAs alloys grown by chemical beam epitaxy Kolhatkar G, Boucherif A, Valdivia CE, Wallace SG, Fafard S, Aimez V, Ares R |
261 - 267 |
Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers Li KL, Sun YR, Dong JR, Zhao YM, Yu SZ, Zhao CY, Zeng XL, Yang H |