1 - 8 |
Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process Teng YY, Chen JC, Huang BS, Chang CH |
9 - 15 |
Heat transfer in an industrial directional solidification furnace with multi-heaters for silicon ingots Li ZY, Liu LJ, Liu X, Zhang YF, Xiong JF |
16 - 21 |
Two-dimensional numerical modeling of grain structure in multi-crystalline silicon ingot Nadri A, Duterrail-Couvat Y, Duffar T |
22 - 27 |
The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system Hur MJ, Han XF, Song DS, Kim TH, Lee NJ, Jeong YJ, Yi KW |
28 - 33 |
System design and hot zone optimization of monocrystalline silicon directional solidification furnace for PV application Ma X, Zheng LL, Zhang H |
34 - 37 |
Improvement of the thermal design in the SiC PVT growth process Yan JY, Chen QS, Jiang YN, Zhang H |
38 - 43 |
Potential for growth of Si-Ge bulk crystals by modified FZ technique Gonik MA |
44 - 48 |
Adaptive phase field modeling of morphological instability and facet formation during directional solidification of SiGe alloys Lin HK, Chen HY, Lan CW |
49 - 54 |
3D numerical investigation and improvement to the design of the thermal field before seeding in a multi-die edge-defined film-fed growth system for sapphire ribbon crystals Yu QH, Liu LJ, Geng AA, Jiang BW, Li ZY, Xu YY, Xue KM |
55 - 60 |
Thermal and stress distributions in larger sapphire crystals during the cooling process in a Kyropoulos furnace Chen CH, Chen JC, Chiue YS, Chang CH, Liu CM, Chen CY |
61 - 65 |
The relative contributions of thermo-solutal Marangoni convections on flow patterns in a liquid bridge Minakuchi H, Takagi Y, Okano Y, Gima S, Dost S |
66 - 71 |
Numerical simulation of InGaSb crystal growth by temperature gradient method under normal- and micro-gravity fields Nobeoka M, Takagi Y, Okano Y, Hayakawa Y, Dost S |
72 - 76 |
Combined effect of crucible rotation and magnetic field on hydrothermal wave Takagi Y, Okano Y, Minakuchi H, Dost S |
77 - 81 |
The influence of vibrations on melt flows during detached Bridgman crystal growth Lyubimova TP, Lyubimov DV, Ivantsov AO |
82 - 87 |
Numerical investigation of heat and mass transfer during vertical Bridgman crystal growth under rotational vibrations Lyubimova TP, Parshakova YN |
88 - 94 |
Modeling of axial vibrational control technique for CdTe VGF crystal growth under controlled cadmium partial pressure Avetissov I, Kostikov V, Meshkov V, Sukhanova E, Grishechkin M, Belov S, Sadovskiy A |
95 - 99 |
Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory Shiramomo T, Gao B, Mercier F, Nishizawa S, Nakano S, Kakimoto K |
100 - 105 |
Combined 3D and 2.5D modeling of the floating zone process with Comsol Multiphysics Wunscher M, Menzel R, Riemann H, Ludge A |
106 - 110 |
Quasi-two-dimensional equilibrium solid/liquid interface of colloids at low osmotic pressure Wang ZJ, Wang JC, Wang LL, Li JJ, Zhou YH |
111 - 114 |
Lattice-matching of Si grown on 6H-SiC(000-1) C-face Li LB, Chen ZM, Xie LF, Yang C |
115 - 120 |
The effect of anisotropic surface tension on the interface evolution of a particle in the undercooled melt Chen MW, Wang ZD, Xu JJ |
121 - 126 |
Phase field modeling with large interface thickness and undercooling Chen CC, Lin HK, Lan CW |
127 - 133 |
Solidification of multicrystalline silicon-simulation of micro-structures Miller W, Popescu A, Cantu G |
134 - 139 |
Phase field modeling of facet formation during directional solidification of silicon film Lin HK, Chen HY, Lan CW |
140 - 147 |
Phase-field simulations and geometrical characterization of cellular solidification fronts Ma YW, Plapp M |
148 - 153 |
Free energy of the bcc-liquid interface and the Wulff shape as predicted by the phase-field crystal model Podmaniczky F, Toth GI, Pusztai T, Granasy L |
VIII - VIII |
The 7th International Workshop on Modeling in Crystal Growth Preface Lan CW, Chen JC, Zhang H |