Journal of Crystal Growth

Journal of Crystal Growth, Vol.388 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (26 articles)

1 - 4	7-Cul crystal growth in ionic liquids by the oxygen-free cooling method Lou BQ, Zhang JF, Luo H, Pan JG, Pan JG
5 - 11	Growth and FIB-SEM analyses of C-60 microtubes vertically synthesized on porous alumina membranes Miyazawa K, Kuriyama R, Shimomura S, Wakahara T, Tachibana M
12 - 16	Growth of a Si0.50Ge0.50 crystal by the traveling liquidus-zone (TLZ) method in microgravity Kinoshita K, Arai Y, Inatomi Y, Tsukada T, Adachi S, Miyata H, Tanaka R, Yoshikawa J, Kihara T, Tomioka H, Shibayama H, Kubota Y, Warashina Y, Sasaki Y, Ishizuka Y, Harada Y, Wada S, Harada C, Ito T, Takayanagi M, Yoda S
17 - 21	Investigations on synthesis, growth, electrical and defect studies of lithium selenoindate single crystals Vijayakumar P, Magesh M, Arunkumar A, Babu GA, Ramasamy P, Abhaya S
22 - 28	An in situ AFM investigation on the morphology of the (100) growth interface of ZTS crystal Cao YC, Li MW, Cheng M, Song J, Hu ZT
29 - 34	Effect of crucible shape on heat transport and melt-crystal interface during the Kyropoulos sapphire crystal growth Chen C, Chen HJ, Yan WB, Min CH, Yu HQ, Wang YM, Cheng P, Liu CC
35 - 41	Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy Xia Y, Brault J, Vennegues P, Nemoz M, Teisseire M, Leroux M, Chauveau JM
42 - 47	Numerical and experimental studies on the Black Periphery Wafer in CZ Si growth Su WJ, Zuo R, Lu JG, Di CY, Cheng XN
48 - 53	Onset of plastic relaxation in semipolar (11(2)over-bar2) InxGa1-xN/GaN heterostructures Koslow IL, Hardy MT, Hsu PS, Wu F, Romanov AE, Young EC, Nakamura S, DenBaars SP, Speck JS
54 - 60	Single crystal growth of the hexagonal manganites R MnO3 (R = rare earth) by the optical floating-zone method Fan C, Zhao ZY, Song JD, Wu JC, Zhang FB, Sun XF
61 - 69	A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method Galazka Z, Uecker R, Fornari R
70 - 75	Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation Voelskow M, Endler R, Schumann T, Mucklich A, Ou X, Liepack EH, Gebel T, Peeva A, Skorupa W
76 - 82	Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates Allerman AA, Crawford MH, Lee SR, Clark BG
83 - 86	Crystal growth, characterization of NdTaO4: A new promising stoichiometric neodymium laser material Ning KJ, Zhang QL, Zhang DM, Fan JT, Sun DL, Wang XF, Hang Y
87 - 91	Structure and composition analysis of the Cu-Zn-Se ternary compounds by TEM/EDS Chen TM, Lan SM, Uen WY, Yang TN, Chang KJ
92 - 97	Strained InGaAs/InAlAs quantum wells for complementary III-V transistors Bennett BR, Chick TF, Boos JB, Champlain JG, Podpirka AA
98 - 102	Improvement of growth rate and optical performances of rapidly grown KDP crystal by adding cyclohexane diamine tetraacetic acid in growth solution Zhu SJ, Wang SL, Ding JX, Liu GX, Liu WJ, Liu L, Wang DL, Li WD, Gu QT, Xu XG
103 - 106	Single crystal flux growth of the Ising spin-chain system gamma-COV2O6 He ZZ, Itoh M
107 - 111	Undercooling growth and magnetic characterization of ferromagnetic shape memory alloy Ni2FeGa single crystals Qian JF, Zhang HG, Chen JL, Wang WH, Wu GH
112 - 115	Novel activation process for Mg-implanted GaN Hashimoto S, Nakamura T, Honda Y, Amano H
116 - 123	Unveiling transient GaAs/GaP nanowire growth behavior using group V oscillations Boulanger JP, LaPierre RR
124 - 131	Studies on the structure, growth and characterization of morpholinium perchlorate single crystals Arunkumar A, Ramasamy P
132 - 136	Highly uniform growth of 2-inch GaN wafers with a multi-wafer HVPE system Liu NL, Wu JJ, Li WH, Luo RH, Tong YZ, Zhang GY
137 - 142	Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating Choi S, Kim HJ, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH
143 - 149	Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions Kim J, Lochner Z, Ji MH, Choi S, Kim HJ, Kim JS, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH
150 - 150	Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template (vol 381, pg 37, 2013) Khan DT, Takeuchi S, Kikkawa J, Nakamura Y, Miyake H, Hiramatsu K, Imai Y, Kimura S, Sakata O, Sakai A