Journal of Crystal Growth

Journal of Crystal Growth, Vol.390 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (22 articles)

1 - 4	Prismatic punching defects in CdTe compounds Kim KH, Bolotnikov AE, Camarda GS, Franc J, Fochuk P, James RB
5 - 11	Surface morphology and Si incorporation in GaSbBi(As)/GaSb films Duzik A, Millunchick JM
12 - 17	Growth and structural characterizations of chromium mixed molybdenum diselenides (CrxMo1-xSe2 (x=0.25, 0.50, 0.75)) single crystals Desai P, Patel DD, Jani AR
18 - 23	Investigation on the growth and characterization of 4-aminobenzophenone single crystal by the vertical dynamic gradient freeze technique Prabhakaran SP, Babu RR, Sukumar M, Bhagavannarayana G, Ramamurthi K
24 - 29	On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide Yazdanfar M, Pedersen H, Sukkaew P, Ivanov IG, Danielsson O, Kordina O, Janzen E
30 - 37	Rational polymorph screening based on slow cooling crystallization of poorly soluble mebendazole Karashima M, Kimoto K, Kojima T, Ikeda Y
38 - 45	Controlling indium incorporation in InGaN barriers with dilute hydrogen flows Koleske DD, Wierer JJ, Fischer AJ, Lee SR
46 - 50	Homoepitaxial growth of AIN layers on freestanding AIN substrate by metalorganic vapor phase epitaxy Morishita T, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I
51 - 55	Influence of the barrier composition in GaN/In chi Al1-chi N quantum wells properties Kriouche N, Watanabe A, Oda O, Egawa T
56 - 60	Piezoelectric, ferroelectric properties of multiferroic YMnO3 epitaxial film studied by piezoresponse force microscopy Zhang RL, Chen CL, Duan MM, Niu LW, Jin KX
61 - 66	Epitaxial growth of spinel cobalt ferrite films on MgAl2O4 substrates by direct liquid injection chemical vapor deposition Shen LM, Althammer M, Pachauri N, Loukya B, Datta R, Iliev M, Bao NZ, Gupta A
67 - 70	A new approach to the CZ crystal growth weighing control Kasimkin PV, Moskovskih VA, Vasiliev YV, Shlegel VN, Yufere VS, Vasiliev MG, Zhdankov VN
71 - 79	General aspects of the vapor growth of semiconductor crystals - A study based on DF1 simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient Kempisty P, Strak P, Sakowski K, Krukowski S
80 - 87	An analysis of segregation during horizontal ribbon growth of silicon Daggolu P, Yeckel A, Derby JJ
88 - 91	Single crystal growth and structure refinement of hollandite-type K1.98Fe1.98Sn6.02O16 Fujimoto K, Takamori K, Yamaguchi Y, Ito S
92 - 95	Solid solution strengthening and phase transformation in high-temperature annealed Si80Ge20 alloy Chiang TY, Wen HC, Chou WC, Tsai CH
96 - 100	Control of silicon solidification and the impurities from an Al-Si melt Wang PP, Lu HM, Lai YS
101 - 108	Temperature-dependent growth mechanism and microstructure of ZnO nanostructures grown from the thermal oxidation of zinc Yuan L, Wang C, Cai RS, Wang YQ, Zhou GW
109 - 113	Finite element simulation of the temperature field in the large volume cubic high pressure apparatus cavity Gu X, Li R, Tian Y
114 - 119	Ultrasound assisted reactive crystallization of strontium sulfate Sheikh AR, Patel SR
120 - 124	Molecular beam epitaxy growth of GaAsBi using As-2 and As-4 Richards RD, Bastiman F, Hunter CJ, Mendes DF, Mohmad AR, Roberts JS, David JPR
125 - 128	On the detachment of Si ingots from SiO2 crucibles Gallien B, Duffar T, Garandet JP