Journal of Crystal Growth

Journal of Crystal Growth, Vol.391 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (19 articles)

1 - 6	Nucleation and solidification of laterally grown silicon micro-films on amorphous substrates using the VLS mechanism LeBoeuf JL, Quitoriano NJ
7 - 12	Nanoscopic investigations on the surface topography, defect-substructure, dislocations and micromorphology of surfaces of BaxSr1-x(NO3)(2) mixed crystals Hussain KA, Kumar PM, Saritha A, Murthy MRK, Ganesan V
13 - 17	Study of silicon crystal surface formation based on molecular dynamics simulation results Barinovs G, Sabanskis A, Muiznieks A
18 - 24	Effect of growth rate on the microstructure and mechanical behavior of directionally solidified Y3Al5O12/MgAl2O4 eutectics Abali S
25 - 32	Synthesis and crystallization mechanism of europium-titanate Eu2Ti2O7 Mrazek J, Surynek M, Bakardjieva S, Bursik J, Kasik I
33 - 40	Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates Reuters B, Strate J, Hahn H, Finken M, Wille A, Heuken M, Kalisch H, Vescan A
41 - 45	Characterization of {11-22} GaN grown using two-step growth technique on shallowly etched r-plane patterned sapphire substrates Furuya H, Hashimoto Y, Yamane K, Okada N, Tadatomo K
46 - 51	Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes Hoffmann V, Mogilatenko A, Netzel C, Zeimer U, Einfeldt S, Weyers M, Kneissl M
52 - 58	Dendritic microstructure formation in a directionally solidified Al-11.6Cu-0.85Mg alloy Zhang XF, Zhao JZ
59 - 63	Growth rate for the selective epitaxial growth of III-V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments Jiang S, Merckling C, Guo W, Waldron N, Caymax M, Vandervorst W, Seefeldt M, Heyns M
64 - 71	Crystallization behavior of NaCl droplet during repeated crystallization and dissolution cycles: An NMR study Gupta S, Pel L, Kopinga K
72 - 77	Growth mechanisms of vapor-liquid-solid grown nanowires: A detailed analysis of irregular nanowire formation Koto M
78 - 84	A skull-aided technique for directional solidification of Nb-41Ni-40Ti hydrogen permeable alloy Yan EH, Li XZ, Liu DM, Su YQ, Guo JJ, Fu HZ
85 - 96	Connection between GaN and InGaN growth mechanisms and surface morphology Koleske DD, Lee SR, Crawford MH, Cross KC, Coltrin ME, Kempisty JM
97 - 103	Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N-2/H-2 excited plasma - effect of TMG flow rate and VHF power Lu Y, Kondo H, Ishikawa K, Oda O, Takeda K, Sekine M, Amano H, Hori M
104 - 110	Synthesis, growth, crystal structure, EDX, UV-vis-NIR and DSC studies of L-proline lithium bromide monohydrate A new semiorganic compound Shkir M, Alfaify S, Khan MA, Dieguez E, Perles J
111 - 115	Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire Wang HT, Jia CH, Xu JK, Chen YH, Chen XW, Zhang WF
116 - 120	Photoluminescence at up to 2.4 mu m wavelengths from GalnAsBi/AllnAs quantum wells Butkute R, Pacebutas V, Cechavicius B, Nedzinskas R, Selskis A, Arlauskas A, Krotkus A
121 - 129	Epitaxial growth of Fe islands on LaAlO3 (001) substrates Zanouni M, Ben Azzouz C, Derivaz M, Dentel D, Denys E, Diani M, Aouni A, Morales FM, Manuel JM, Garcia R, Bischoff JL