Journal of Crystal Growth

Journal of Crystal Growth, Vol.393 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (38 articles)

1 - 1	The 19th American Conference on Crystal Growth and Epitaxy in conjunction with The 16th US Biennial Workshop on Organometallic Vapor Phase Epitaxy Preface Bliss D, Dupuis R, Wang C, Paskova T, Qiu R, Bhat R, Caneau C
2 - 6	Photovoltaic materials and crystal growth research and development in the Gigawatt era Ciszek TF
7 - 12	Studies on growth and characterization of a novel nonlinear optical and ferroelectric material - N,N-dimethylurea picrate single crystal Shanthi A, Krishnan C, Selvarajan P
13 - 17	The LUCIFER project and production issues for crystals needed in rare events physics experiments Dafinei I
18 - 22	Coilable single crystals fibers of doped-YAG for high power laser applications Soleimani N, Ponting B, Gebremichael E, Ribuot A, Maxwell G
23 - 27	Lithium containing chalcogenide single crystals for neutron detection Tupitsyn E, Bhattacharya P, Rowe E, Matei L, Cui Y, Buliga V, Groza M, Wiggins B, Burger A, Stowe A
28 - 31	Growth and testing of vertical external cavity surface emitting lasers (VECSELs) for intracavity cooling of Yb:YLF Cederberg JG, Albrecht AR, Ghasemkhani M, Melgaard SD, Sheik-Bahae M
32 - 34	Control of vapor feed from liquid precursors to the OMVPE process Woelk E, DiCarlo R
35 - 41	Impurity effects in crystal growth from solutions: Steady states, transients and step bunch motion Ranganathan M, Weeks JD
42 - 44	Constitutional supercooling in heavily As-doped Czochralski Si crystal growth Taishi T, Ohno Y, Yonenaga I
45 - 48	Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements Inoue K, Taishi T, Tokumoto Y, Kutsukake K, Ohno Y, Ohsawa T, Gotoh R, Yonenaga I
49 - 53	Efficient computation of population distribution of microdefects at any location in growing Czochralski silicon single crystals Samanta G, Kulkarni M
54 - 58	Dislocation density control in high-purity germanium crystal growth Wang GJ, Guan YT, Mei H, Mei DM, Yang G, Govani J, Khizar M
59 - 63	Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures Jo B, Lee CR, Kim JS, Han WS, Song JH, Leem JY, Noh SK, Ryou JH, Dupuis RD
64 - 69	Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III-V solar cell applications Garcia I, France RM, Geisz JF, Simon J
70 - 74	Properties of'bulk' GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration Kim TW, Forghani K, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, Lotshaw WT, Moss SC
75 - 80	GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy . Chen XY, Zhang YG, Gu Y, Zhou L, Cao YY, Fang X, Li H
81 - 84	Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP Pitts OJ, Benyon W, SpringThorpe AJ
85 - 88	Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes Pitts OJ, Hisko M, Benyon W, Raymond S, SpringThorpe AJ
89 - 92	In-situ decomposition and etching of AIN and GaN in the presence of HCI Fahle D, Kruecken T, Dauelsberg M, Kalisch H, Heuken M, Vescan A
93 - 97	High-temperature acidic ammonothermal method for GaN crystal growth Yoshida K, Aoki K, Fukuda T
98 - 102	The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AIN/Si(111) substrates Gagnon JC, Leathersich JM, Shahedipour-Sandvik F, Redwing JM
103 - 107	On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors Dauelsberg M, Brien D, Rauf H, Reiher F, Baumgartl J, Haberlen O, Segal AS, Lobanova AV, Yakovlev EV, Talalaev RA
108 - 113	In situ X-ray diffraction monitoring of GalnN/GaN superlattice during organometalic vapor phase epitaxy growth Yamamoto T, Iida D, Kondo Y, Sowa M, Umeda S, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I
114 - 118	Optimization of Ni-Cr flux growth for hexagonal boron nitride single crystals Hoffman TB, Clubine B, Zhang Y, Snow K, Edgar JH
119 - 122	Slip systems in wurtzite ZnO activated by Vickers indentation on {2(1)over-bar (1)over-bar0} and {10(1)over-bar0} surfaces at elevated temperatures Ohno Y, Koizumi H, Tokumoto Y, Kutsukake K, Taneichi H, Yonenaga I
123 - 128	Latest developments of large-diameter c-axis sapphire grown by CHES method Schwerdtfeger CR, Ullal S, Shetty R, Filgate J, Dhanaraj G
129 - 133	Dielectric properties in lead-free piezoelectric (Bi0.5Na0.5)TiO3-BaTiO3 single crystals and ceramics Chen CS, Tu CS, Chen PY, Ting Y, Chiu SJ, Hung CM, Lee HY, Wang SF, Anthoninappen J, Schmidt VH, Chien RR
134 - 137	Czochralski growth of Gd-3(Al5-x,Ga-x)O-12 (GAGG) single crystals and their scintillation properties Kurosawa S, Shoji Y, Yokota Y, Kamada K, Chani VI, Yoshikawa A
138 - 141	Crystal growth of CaYAlO4 single crystals grown by the micro-pulling down method and their luminescent properties Yamaji A, Suzuki A, Shoji Y, Kurosawa S, Pejchal J, Kamada K, Yokota Y, Yoshikawa A
142 - 144	Crystal growth and optical properties of Ce:(La,Gd)(2)Ge2O7 grown by the floating zone method Kurosawa S, Shishido T, Sugawara T, Yubuta K, Jan P, Suzuki A, Yokota Y, Shoji Y, Kamada K, Yoshikawa A
145 - 149	Ge cages at the SiC/graphene interface: A first principles calculation Sirikumara HI, Bohorquez-Ballen J, Jayasekera T
150 - 155	High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H-SiC (0001) Giannazzo F, Deretzis I, Nicotra G, Fisichella G, Ramasse QM, Spinella C, Roccaforte F, La Magna A
156 - 158	Growth of KPb2Cl5 and K2CeCl5 for gamma ray detection using vertical Bridgman method Rowe E, Tupitsyn E, Bhattacharya P, Matei L, Groza M, Buliga V, Atkinson G, Burger A
159 - 162	Material purification, crystal growth, and spectroscopy of Tm-doped KPb2Cl5 and KPb2Br5 for 2 mu m photonic applications Brown E, Kumi-Barimah E, Hommerich U, Bluiett AG, Trivedi SB
163 - 166	Optical properties of a Nd-doped SrBr2 crystal grown by the Bridgman technique Kurosawa S, Yokota Y, Yanagida Y, Pejchal J, Yamaji A, Shoji Y, Kamada K, Yoshikawa A
167 - 170	Thermo-physical properties of Cu2ZnSnS4 single crystal Nagaoka A, Yoshino K, Aoyagi K, Minemoto T, Nose Y, Taniyama T, Kakimoto K, Miyake H
171 - 174	Microstructure of striae in < 0(4)over-bar41 >-oriented lithium niobate single crystal grown by Czochralski method Ohno Y, Taishi T, Bamba N, Yonenaga I