| 1 - 4 |
LPE growth and characterization of InAs1-xNx films
Lv YF, Hu SH, Yang XY, Wang Y, Sun CH, Qiu F, Cong R, Dong WJ, Zhang Y, Yu GL, Dai N |
| 5 - 12 |
Optimization via simulation of a seeded directional solidification process for quasi-single crystalline silicon ingots by insulation partition design
Qi XF, Zhao WH, Liu LJ, Yang Y, Zhong GX, Huang XM |
| 13 - 17 |
Fabrication of free-standing GaN by using thermal decomposition of GaN
Kim S, Lee H, Kim S, Choi S, Koo J, Chang JH |
| 18 - 22 |
Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD
Sarkijarvi S, Sintonen S, Tuomisto F, Bosund M, Suihkonen S, Lipsanen H |
| 23 - 32 |
Influence of 3C-SiC/Si (111) template properties on the strain relaxation in thick GaN films
Cordier Y, Frayssinet E, Portail M, Zielinski M, Chassagne T, Korytov M, Courville A, Roy S, Nemoz M, Chmielowska M, Vennegues P, Schenk HPD, Kennard M, Bavard A, Rondi D |
| 33 - 39 |
Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison
Ahl JP, Hertkorn J, Koch H, Galler B, Michel B, Binder M, Hollander B |
| 40 - 44 |
Growth initiation for buried-heterostructure quantum-cascade laser regrowth by gas-source molecular-beam epitaxy
Flores YV, Elagin M, Kurlov SS, Aleksandrova A, Monastyrskyi G, Kischkat J, Semtsiv MP, Masselink WT |
| 45 - 57 |
Synthesis, experimental and theoretical Studies of 8-hydroxyquinolinium 3,5-dinitrobenzoate single crystal
Sudharsana N, Krishnakumar V, Nagalakshmi R |
