Journal of Crystal Growth

Journal of Crystal Growth, Vol.411 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (18 articles)

1 - 3	AgBiS2 single crystal grown using slow cooling method and its characterization Nakamura M, Nakamura H, Ohsawa T, Imura M, Shimamura K, Ohashi N
4 - 11	Microstructure evaluation of nanocrystalline MgO powders using the advanced X-ray line profile analysis Soleimanian V, Abedi M, Aghdaee SR
12 - 18	Dislocation generation at near-coincidence site lattice grain boundaries during silicon directional solidification Autruffe A, Hagen VS, Arnberg L, Di Sabatino M
19 - 23	Growth and characterization of 2,6-Di-tert-butyl-4-(dimethylaminomethyl)phenol single crystal by the vertical Bridgman method Solanki SSB, Perumal RN, Ahamed MB
24 - 29	Nucleation of ammonium aluminum sulfate dodecahydrate from unseeded aqueous solution You SW, Zhang YF, Zhang Y
30 - 33	Measurement of the diffusivity of CdTe in liquid Te at crystal growth temperatures Roszmann J, Sekhon M, Dost S
34 - 37	Compositional homogeneity and X-ray topographic analyses of CdTexSe1-x grown by the vertical Bridgman technique Roy UN, Bolotnikov AE, Camarda GS, Cui Y, Hossain A, Lee K, Lee W, Tappero R, Yang G, Cui Y, Burger A, James RB
38 - 44	Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template Khan DT, Takeuchi S, Nakamura Y, Nakamura K, Arauchi T, Miyake H, Hiramatsu K, Imai Y, Kimura S, Sakai A
45 - 48	Effect of reaction mixture composition and silica source on size distribution of zeolite X crystals Tekin R, Bac N, Warzywoda J, Sacco A
49 - 55	Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon Gao B, Jiptner K, Nakano S, Harada H, Miyamura Y, Sekiguchi T, Kakimoto K
56 - 62	Stable vicinal step orientations in m-plane GaN Kelchner KM, Kuritzky LY, Nakamura S, DenBaars SP, Speck JS
63 - 70	Investigating the effect of carbon on oxygen behavior in n-type Czochralski silicon for PV application Zhang S, Juel M, Ovrelid EJ, Tranell G
71 - 75	Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE Ishizaka F, Hiraya Y, Tomioka K, Fukui T
76 - 80	Characterization of semi-polar GaN on GaAs substrates Saengkaew P, Sanorpim S, Yordsri V, Thanachayanont C, Onabe K
81 - 87	Physical properties of vapour grown indium monotelluride platelets Kunjomana AG, Chandrasekharan KA, Teena M
88 - 95	Quantitative analysis by in situ synchrotron X-ray radiography of the evolution of the mushy zone in a fixed temperature gradient Salloum-Abou-Jaoude G, Reinhart G, Combeau H, Zaloznik M, Lafford TA, Nguyen-Thi H
96 - 105	Existence and static stability of the meniscus in horizontal ribbon growth Oliveros GA, Sridhar S, Ydstie BE
106 - 109	MOVPE growth of semipolar (11(2)over-bar2) Al1-xInxN across the alloy composition range (0 <= x <= 0.55) Hatui N, Frentrup M, Rahman AA, Kadir A, Subramanian S, Kneissl M, Bhattacharya A