| 1 - 4 |
Growth and spectroscopic properties of Tb3+-doped Na3La9O3(BO3)(8) crystal
Shan FX, Zhang GC, Zhang XY, Xu TX, Wu YX, Fu Y, Wu YC |
| 5 - 10 |
Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures
Aziz M, Mesli A, Felix JF, Jameel D, Al Saqri N, Taylor D, Henini M |
| 11 - 13 |
Investigation of anisotropic wafer bending curvature in a-plane GaN films grown on r-plane sapphire substrates
Shon JW, Ohta J, Inoue S, Kobayashi A, Fujioka H |
| 14 - 23 |
Solidification and thermodynamic parameters of binary faceted organic alloys: Picric acid-Resorcinol system
Singh J, Singh NB |
| 24 - 27 |
GaSb-based > 3 mu m laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation
Kaspi R, Lu CA, Newell TC, Yang C, Luong S |
| 28 - 32 |
GaN growth on Si with rare-earth oxide distributed Bragg reflector structures
Grinys T, Dargis R, Kalpakovaite A, Stanionyte S, Clark A, Arkun FE, Reklaitis I, Tomasiunas R |
| 33 - 37 |
Substrate temperature optimization for heavily-phosphorus-doped diamond films grown on vicinal (001) surfaces using high-power-density microwave-plasma chemical-vapor-deposition
Maida O, Tada S, Nishio H, Ito T |
| 38 - 41 |
Room-temperature fabrication of highly oriented beta-Ga2O3 thin films by excimer laser annealing
Shiojiri D, Yamauchi R, Fukuda D, Tsuchimine N, Kaneko S, Matsuda A, Yoshimoto M |
| 42 - 48 |
Three dimensional organic framework of 2-amino 4, 6 dimethoxypyrimidine p-toluenesulfonic acid monohydrate: synthesis, single crystal growth and its properties
Jauhar ROMU, Kalainathan S, Murugakoothan P |
| 49 - 54 |
Thermodynamics and kinetics of the growth mechanism of vapor-liquid-solid grown nanowires
Koto M |
| 55 - 61 |
Comprehensive nucleation mechanisms of quasi-monolayer graphene grown on Cu by chemical vapor deposition
Ning J, Wang D, Han D, Shi YG, Cai WW, Zhang JC, Hao Y |
| 62 - 67 |
Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions
El Kazzi S, Smets Q, Ezzedini M, Rooyackers R, Verhulst A, Douhard B, Bender H, Collaert N, Merckling C, Heyns MM, Thean A |
| 68 - 76 |
Strain-relaxed buffer technology based on metamorphic InxAl1-xAs
Loke WK, Tan KH, Wicaksono S, Yoon SF, Wang W, Zhou Q, Yeo YC |
| 77 - 79 |
Oxygen-radical-assisted pulsed-laser deposition of beta-Ga2O3 and beta-(AlxGa1-x)(2)O-3 films
Wakabayashi R, Oshima T, Hattori M, Sasaki K, Masui T, Kuramata A, Yamakoshi S, Yoshimatsu K, Ohtomo A |
| 80 - 80 |
MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-ln/Sb content for very low turn-on-voltage InP-based DHBTs (vol 404, pg 172, 2014)
Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H |
