Journal of Crystal Growth

Journal of Crystal Growth, Vol.433 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (27 articles)

1 - 6	Hydrothermal fabrication of multi-functional Eu3+ and Tb3+ co-doped BiPO4: Photocatalytic activity and tunable luminescence properties Wang Y, Huang HW, Quan CM, Tian N, Zhang YH
7 - 12	Experimental study of the orientation dependence of indium incorporation in GaInN Bhat R, Guryanov GM
13 - 18	Growth of BaIn2S4 layers through the hot-wall-epitaxy method and their electric/optical properties Hong KJ, Jeong TS, Youn CJ
19 - 23	Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique Shi B, Lau KM
24 - 30	Effects of tilt angle of mirror-lamp system on shape of solid-liquid interface of silicon melt during floating zone growth using infrared convergent heating Hossain MM, Watauchi S, Nagao M, Tanaka I
31 - 35	Twin defects in thick stoichiometric lithium tantalate crystals prepared by a vapor transport equilibration method Yang JF, Sun J, Xu JJ, Li QL, Shang JF, Zhang L, Liu SG, Huang CX
36 - 42	Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth Kaufmann NAK, Lahourcade L, Hourahine B, Martin D, Grandjean N
43 - 47	Growth of micro-crystals in solution by in-situ heating via continuous wave infrared laser light and an absorber Pathak S, Dharmadhikari JA, Thamizhavel A, Mathur D, Dharmadhikari AK
48 - 53	Growth of solid electrolyte LixLa(1-x)/3NbO3 single crystals by the directional solidification method Fujiwara Y, Hoshikawa K, Kohama K
54 - 58	Temperature distribution across the growth zone of sapphire (Al2O3) and yttrium-aluminum garnet (YAG) single crystal fibers Bufetova GA, Rusanov SY, Seregin VF, Pyrkov YN, Kamynin VA, Tsvetkov VB
59 - 62	Spatial nonlinear optics anisotropy and directional growth of TbCOB crystal by micro-pulling-down for SHG application Yuan DS, Li Y, Shu J, Gao ZL, Jia ZT, Wang ZP, Tao XT
63 - 73	The influence of ternary alloying elements on the Al-Si eutectic microstructure and the Si morphology Darlapudi A, McDonald SD, Terzi S, Prasad A, Felberbaum M, StJohn DH
74 - 79	Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE Mukundan S, Chandan G, Mohan L, Roul B, Krupanidhi SB
80 - 85	Photoluminescence activity of BaTiO3 nanocrystals dependence on the structural evolution Zhan HQ, Jiang XP, Zhu MX, Li XH, Luo ZY, Shu KZ
86 - 88	Epitaxial perovskite Bi2ZnTiO6 thin film with high tetragonality Ahn Y, Son JY
89 - 96	Quantification of Bi distribution in MOVPE-grown Ga(AsBi) via HAADF STEM Knaub N, Beyer A, Wegele T, Ludewig P, Volz K
97 - 104	Characteristic morphologies of triangular defects on Si-face 4H-SiC epitaxial films Yamashita T, Naijo T, Matsuhata H, Momose K, Osawa H, Okumura H
105 - 113	Determination of composition of non-homogeneous GaInNAs layers Pucicki D, Bielak K, Sciana B, Radziewicz D, Latkowska-Baranowska M, Kovac J, Vincze A, Tlaczala M
114 - 121	Metalorganic vapor phase epitaxy of ternary rhombohedral (Bi1-xSbx)(2) Se-3 solid solutions Kuznetsov PI, Yakushcheva GG, Shchamkhalova BS, Luzanov VA, Temiryazev AG, Jitov VA
122 - 127	Two-dimensional X-ray diffraction characterization of (Zn,Cd,Mg)Se wurtzite layers grown on Bi2Se3 Hernandez-Mainet LC, Chen Z, Garcia TA, Bykov AB, Krusin-Elbaum L, Tamargo MC
128 - 138	Utilization of oriented crystal growth for screening of aromatic carboxylic acids cocrystallization with urea Przybylek M, Ziolkowska D, Kobierski M, Mroczynska K, Cysewski P
139 - 142	The role of titanium at the SrTiO3/GaAs epitaxial interface Meunier B, Bachelet R, Grenet G, Botella C, Regreny P, Largeau L, Penuelas J, Saint-Girons G
143 - 147	Nucleation and morphology of sodium metaborate dihydrate from NaOH solution Qin SY, Zhang YF, Zhang Y
148 - 152	Microstructure of iridescence-lacking pearl formed in Pinctada fucata Suzuki M, Mukai H, Aoki H, Yoshimura E, Sakuda S, Nagasawa H, Kogure T
153 - 159	Superheating suppresses structural disorder in layered BiI3 semiconductors grown by the Bridgman method Johns PM, Sulekar S, Yeo S, Baciak JE, Bliss M, Nino JC
160 - 164	Subsurface growth of ultrathin Ni films on Cu(001) surfaces: Photoemission singularity index study Guan LX, Tao JG
165 - 171	GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Cordier Y, Damilano B, Aing P, Chaix C, Linez F, Tuomisto F, Vennegues P, Frayssinet E, Lefebvre D, Portail M, Nemoz M