1 - 11 |
InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy Robson MT, LaPierre RR |
12 - 15 |
Anomalous elongation of c-axis of GaN on Al2O3 grown by MBE using NH3-cluster ions Ichinohe Y, Imai K, Suzuki K, Saito H |
16 - 22 |
Effect of surface nitridation on the epitaxial growth of few-layer sp(2) BN Snure M, Paduano Q, Kiefer A |
23 - 33 |
Observations of secondary defects and vacancies in CZ silicon crystals detached from melt using four different types of characterization technique Abe T, Takahashi T, Shirai K |
34 - 39 |
HPHT synthesis of N-H co-doped diamond single crystals Fang C, Jia XP, Chen N, Li YD, Guo LS, Chen LC, Ma HA, Liu XB |
40 - 45 |
Crystal structure, thermal and optical properties of Benzimidazole benzimidazolium picrate crystal Jagadesan A, Peramaiyan G, Srinivasan T, Kumar RM, Arjunan S |
46 - 50 |
Investigation of AlN thin film growth on MgO(111) substrates using low temperature helicon sputtering system Hsu WF, Kao HL, Lin ZP |
51 - 55 |
Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures Rezvani SJ, Favre L, Celegato F, Boarino L, Berbezier I, Pinto N |
56 - 61 |
Domains of molecular beam epitaxial growth of Ga(In)AsBi on GaAs and InP substrates Bennarndt W, Boehm G, Amann MC |
62 - 67 |
AlN thin film grown on different substrates by hydride vapor phase epitaxy Sun MS, Zhang JC, Huang J, Wang JF, Xu K |
68 - 75 |
Effect of a weak transverse magnetic field on the morphology and orientation of directionally solidified Al-Ni alloys Li HX, Fautrelle Y, Hou L, Du DF, Zhang YK, Rena ZM, Lu XG, Moreau R, Li X |
76 - 81 |
The electrical properties of bulk GaN crystals grown by HVPE Gu H, Ren GQ, Zhou TF, Tian FF, Xu Y, Zhang YM, Wang MY, Wang JF, Xu K |
82 - 86 |
Unsteady growth of ammonium chloride dendrites Martyushev LM, Terentiev PS, Soboleva AS |
87 - 91 |
Plasma assisted molecular beam epitaxy of Cu2O on MgO(001): Influence of copper flux on epitaxial orientation Kracht M, Schormann J, Eickhoff M |
92 - 98 |
The inhibition of crystal growth of mirabilite in aqueous solutions in the presence of phosphonates Vavouraki AI, Koutsoukos PG |
99 - 103 |
Face-selective crystal growth behavior of L-aspartic acid in the presence of L-asparagine Sato H, Doki N, Yoshida S, Yokota M, Shimizu K |
104 - 112 |
The lateral In2O3 nanowires and pyramid networks manipulation by controlled substrate surface energy in annealing evolution Shariati M, Darjani M |
113 - 124 |
Synthesis, growth, structural, optical, luminescence, surface and HOMO LUMO analysis of 2-[2-(4-cholro-phenyl)-vinyl]-1-methylquinolinium naphthalene-2-sulfonate organic single crystals grown by a slow evaporation technique Karthigha S, Kalainathan S, Rao KUM, Hamada F, Yamada M, Kondo Y |
125 - 133 |
Non-isothermal crystallization kinetics of ternary Se90Te10-xPbx glasses Atyia HE, Farid AS |
134 - 137 |
Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices Haugan HJ, Mahalingam K, Szmulowicz F, Brown GJ |
138 - 144 |
Two-dimensional bismuth-rich nanosheets through the evaporative thinning of Se-doped Bi2Te3 Hanson ED, Shi FY, Chasapis TC, Kanatzidis MG, Dravid VP |
145 - 149 |
Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE Patel SJ, Logan JA, Harrington SD, Schultz BD, Palmstrom CJ |
150 - 154 |
Growth characteristics of corundum-structured alpha-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures on sapphire substrates Kaneko K, Suzuki K, Ito Y, Fujita S |