| 1 - 5 |
Direct MOVPE growth of semipolar (1122) AlxGa1-xN across the alloy composition range
Hatui N, Rahman AA, Maliakkal CB, Bhattacharya A |
| 6 - 9 |
Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE
Wang L, Elleuch O, Shirahata Y, Kojima N, Ohshita Y, Yamaguchi M |
| 10 - 13 |
Ferroelectric domain of epitaxial AgNbO3 thin film
Ahn Y, Seo J, Lee KJ, Son JY |
| 14 - 19 |
Effect of alternating magnetic field on the removal of metal impurities in silicon ingot by directional solidification
Li PT, Ren SQ, Jiang DC, Li JY, Zhang L, Tan Y |
| 20 - 25 |
Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties
Papadomanolaki E, Bazioti C, Kazazis SA, Androulidaki M, Dimitrakopulos GP, Iliopoulos E |
| 26 - 31 |
Synthesis and characterization of Si/ZnO coaxial nanorod heterostructure on (100) Si substrate
Cho HD, Cho HY, Kwak DW, Kang TW, Yoon IT |
| 32 - 41 |
Thermodynamic equilibrium, metastable zone widths, and nucleation behavior in the cooling crystallization of gestodene-ethanol systems
Wang LY, Zhu L, Yang LB, Wang YF, Sha ZL, Zhao XY |
| 42 - 48 |
Control of crystal phase and morphology in hydrothermal synthesis of BiFeO3 crystal
Xu XQ, Xu QR, Huang YJ, Hu XX, Hu XL, Zhuang NF |
| 49 - 52 |
Polarity dependence of Mn incorporation in (Ga,Mn)N superlattices
Tropf L, Kunert G, Jakiela R, Wilhelm RA, Figge S, Grenzer J, Hommel D |
| 53 - 58 |
Growth and characterization of CdMnTe by the vertical Bridgman technique
Roy UN, Camarda GS, Cui Y, Gu G, Gul R, Hossain A, Yang G, Egarievwe SU, James RB |
| 59 - 62 |
III-V site-controlled quantum dots on Si patterned by nanoimprint lithography
Hussain S, Pozzato A, Tormen M, Zannier V, Biasiol G |
