| 1 - 7 |
Recycling of Al-Si die casting scraps for solar Si feedstock
Seo KH, Jeon JB, Youn JW, Kim SJ, Kim KY |
| 8 - 13 |
Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires
Eftychis S, Kruse J, Koukoula T, Kehagias T, Komninou P, Adikimenakis A, Tsagaraki K, Androulidaki M, Tzanetakis P, Iliopoulos E, Georgakilas A |
| 14 - 24 |
Two-dimensional phase-field study of competitive grain growth during directional solidification of polycrystalline binary alloy
Takaki T, Ohno M, Shibuta Y, Sakane S, Shimokawabe T, Aoki T |
| 25 - 30 |
MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AIN nucleation layer on GaN surface hillock density
Marini J, Leathersich J, Mahaboob I, Bulmer J, Newman N, Shahedipour-Sandvik F |
| 31 - 40 |
Temperature dependency of the Ga/In distribution in Cu(In,Ga)Se-2 absorbers in high temperature processes
Mueller BJ, Demes T, Lill PC, Haug V, Hergert F, Zweigart S, Herr U |
| 41 - 46 |
Reconciling results of MOCVD of a CNT composite with equilibrium thermodynamics
Dhar S, Arod P, Shivashankar SA |
| 47 - 51 |
Simultaneous determination of interfacial energy and growth activation energy from induction time measurements
Shiau LD, Wang HP |
| 52 - 61 |
Nanostructures design by plasma afterglow-assisted oxidation of iron-copper thin films
Imam A, Boileau A, Gries T, Ghanbaja J, Mangin D, Hussein K, Sezen H, Amati M, Belmonte T |
| 62 - 67 |
Characterization of interfaces in mosaic CVD diamond crystal
Muchnikov AB, Radishev DB, Vikharev AL, Gorbachev AM, Mitenkin AV, Drozdov MN, Drozdov YN, Yunin PA |
| 68 - 74 |
Formation of copper porous structures under near-equilibrium chemical vapor deposition
Kornyushchenko AS, Natalich VV, Perekrestov VI |
| 75 - 80 |
Manganese phosphide thin films and nanorods grown on gallium phosphide and on glass substrates
Nateghi N, Lambert-Milot S, Menard D, Masut RA |
| 81 - 88 |
On the effect of added impurity on crystal purity of urea in an oscillatory baffled crystallizer and a stirred tank crystallizer
McLachlan H, Ni XW |
| 89 - 94 |
The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate
Shang L, Zhai GM, Mei FH, Jia W, Yu CY, Liu XG, Xu BS |
| 95 - 97 |
Experimental evidence for the participation of deep eutectic solvents in silver chloride crystal formation at low temperature
Bhatt J, Mondal D, Prasad K |
| 98 - 101 |
Overcoming Zn segregation in CdZnTe with the temperature gradient annealing
Kim K, Bolotnikov AE, Camarda GS, Hossain A, James RB |
| 102 - 109 |
Vertical gradient solution growth of N-type Si0.73Ge0.27 bulk crystals with homogeneous composition and its thermoelectric properties
Omprakash M, Arivanandhan M, Sabarinathan M, Koyama T, Momose Y, Ikeda H, Tatsuoka H, Aswal DK, Bhattacharya S, Inatomi Y, Hayakawa Y |
| 110 - 113 |
A solid phase honey-like channel method for synthesizing urea-ammonium chloride cocrystals on industrial scale
Xue BC, Mao ML, Liu YH, Guo JY, Li J, Liu EB |
| 114 - 120 |
Photoluminescence and the gallium problem for highest-mobility GaAsiAlGaAs-based 2d electron gases
Schlapfer F, Dietsche W, Reichl C, Faelt S, Wegscheider W |
