Journal of Crystal Growth

Journal of Crystal Growth, Vol.445 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (19 articles)

1 - 8	Improvement in the optical quality and energy resolution of CsSrBr3: Eu scintillator crystals Gokhale SS, Stand L, Lindsey A, Koschan M, Zhuravleva M, Melcher CL
9 - 14	Single crystal growth and X-ray structure analysis of non-peripheral octahexyl phthalocyanine Ohmori M, Nakano C, Higashi T, Miyano T, Tohnai N, Fujii A, Ozaki M
15 - 23	Obtaining phase-pure CZTS thin films by annealing vacuum evaporated CuS/SnS/ZnS stack Sanchez TG, Mathew X, Mathews NR
24 - 29	High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE Cheng YT, Liu P, Wu JJ, Xiang Y, Chen XJ, Ji C, Yu TJ, Zhang GY
30 - 36	TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern Mynbaeva MG, Kremleva AV, Kirilenko DA, Sitnikova AA, Pechnikov AI, Mynbaev KD, Nikolaev VI, Bougrov VE, Lipsanen H, Romanov AE
37 - 41	Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method Shen L, Wu D
42 - 46	Morphology and magnetic properties of CoFe2O4 nanocables fabricated by electrospinning based on the Kirkendall effect Zhang ZM, Yang GJ, Wei JX, Bian HQ, Gao JM, Li JY, Wang T
47 - 52	Effect of heating conditions on flow patterns during the seeding stage of Kyropoulos sapphire crystal growth Timofeev VV, Kalaev VV, Ivanov VG
53 - 57	Effect of ramping on oxygen precipitates and Cu-vacancy complex in Czochralski silicon Xu J, Lv YC, Guo WB, Xie TT
58 - 62	New CVD-based method for the growth of high-quality crystalline zinc oxide layers Huber F, Madel M, Reiser A, Bauer S, Thonke K
63 - 64	Comment on "Experimental study of the orientation dependence of indium incorporation in GaInN" [J. Cryst. Growth 433 (2016) 7-12] Monavarian M
65 - 72	Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure - Chemical Vapour Deposition tool Aubin J, Hartmann JM, Bauer M, Moffatt S
73 - 77	The orientational relationship between monoclinic beta-Ga2O3 and cubic NiO Nakagomi S, Kubo S, Kokubun Y
78 - 83	Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission Ko YH, Bae SB, Kim SB, Kim DC, Leem YA, Cho YH, Nam ES
84 - 89	Growth, structural, thermal, electrical and nonlinear optical properties of Yb3+ doped KTiOPO4 Sadhasivam S, Perumal RN, Ramasamy P
90 - 100	Directional melting and solidification of gallium in a traveling magnetic field as a model experiment for silicon processes Dadzis K, Lukin G, Meier D, Bonisch P, Sylla L, Patzold O
101 - 107	Ca10Li(VO4)(7):Nd3+, a promising laser material: growth, structure and spectral characteristics of a Czochralski-grown single crystal Kosmyna MB, Nazarenko BP, Puzikov VM, Shekhovtsov AN, Paszkowicz W, Behrooz A, Romanowski P, Yasukevich AS, Kuleshov NV, Demesh MP, Wierzchowski W, Wieteska K, Paulmann C
108 - 109	Reply to "Comments on'Experimental study of the orientation dependence of indium incorporation in GaInN'" by Morteza Monavarian Bhat R, Guryanov GM
110 - 114	The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD Salehzadeh O, He C, Benyon W, SpringThorpe AJ