Journal of Crystal Growth

Journal of Crystal Growth, Vol.454 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (27 articles)

1 - 5	Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy Trassoudaine A, Roche E, Bougerol C, Andre Y, Avit G, Monier G, Ramdani MR, Gil E, Castelluci D, Dubrovskii VG
6 - 14	Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots Trempa M, Beier M, Reimann C, Rosshirth K, Friedrich J, Lobel C, Sylla L, Richter T
15 - 18	Floating zone growth and magnetic properties of Y2C two-dimensional electride Otani S, Hirata K, Adachi Y, Ohashi N
19 - 24	Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon Li Q, Jiang HX, Lau KM
25 - 29	Reduced growth temperature of Bi6FeCoTi3O18 thin films by conductive bottom layers Yun Y, Huang HL, Meng DH, Cui ZZ, Wang JL, Fu ZP, Peng RR, Zhai XF, Lu YL
30 - 34	High hole concentration Li-doped NiZnO thin films grown by photo-assisted metal-organic chemical vapor deposition Zhao YD, Dong X, Ma ZZ, Zhang YT, Wu B, Zhuang SW, Zhang BL, Li WC, Du GT
35 - 44	Spatial-temporal stability analysis of faceted growth with application to horizontal ribbon growth Helenbrook BT, Barlow NS
45 - 58	Analysis of the traveling heater method for the growth of cadmium telluride Peterson JH, Fiederle M, Derby JJ
59 - 63	HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis Liu NL, Cheng YT, Wu JJ, Li XB, Yu TJ, Xiong H, Li WH, Chen J, Zhang GY
64 - 70	Calculation of strain compensation thickness for III-V semiconductor quantum dot superlattices Polly SJ, Bailey CG, Grede AJ, Forbes DV, Hubbard SM
71 - 81	Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers Wu CH, Lee PY, Chen KY, Tseng YT, Wang YL, Cheng KY
82 - 86	Liquid immiscibility in a CTGS (Ca3TaGa3Si2O14) melt Nozawa J, Zhao HY, Koyama C, Maeda K, Fujiwara K, Koizumi H, Uda S
87 - 95	Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity Zhang Z, Fang HS, Yao QX, Yan H, Gan ZY
96 - 104	Direct observation of spatially isothermal equiaxed solidification of an Al-Cu alloy in microgravity on board the MASER 13 sounding rocket Murphy AG, Mathiesen RH, Houltz Y, Li J, Lockowandt C, Henriksson K, Melville N, Browne DJ
105 - 110	Solubility and metastable zone width of aqueous sodium dichromate dihydrate solutions in the presence of sodium chromate additive Wang LP, Feng HT, Dong YP, Peng JY, Li W
111 - 113	Anomalous elongation of c-axis of AlN on Al2O3 grown by MBE using NH3-cluster ions Ichinohe Y, Imai K, Suzuki K, Saito H
114 - 120	Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Lee HJ, Bae SY, Lekhal K, Mitsunari T, Tamura A, Honda Y, Amano H
121 - 127	Fabrication of self-assembly polycrystalline perovskite microwires and photodetectors Zhu C, Tang Y, Chen F, Manohari AG, Zhu Y, Shi ZL, Xu CX
128 - 133	Growth and characterization of iron scandium sulfide (FeSc2S4) Morey JR, Plumb KW, Pasco CM, Trump BA, McQueen TM, Koohpayeh SM
134 - 138	Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition Mesoraca S, Kleibeuker JE, Prasad B, MacManus-Driscoll JL, Blamire MG
139 - 146	Studies on the growth aspects, structural, thermal, dielectric and third order nonlinear optical properties of solution grown 4-methylpyridinium p-nitrophenolate single crystal Devi SR, Kalaiyarasi S, Zahid IM, Kumar RM
147 - 155	Analysis of grain structure evolution based on optical measurements of mc Si wafers Strauch T, Demant M, Krenckel P, Riepe S, Rein S
156 - 163	A simplified reaction model and numerical analysis for Si deposition from the SiHCl3-H-2 system in vertical rotating disk reactors Makino S, Inagaki M, Nakashima K, Kozawa T, Horinouchi N
164 - 172	High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy Kyle ECH, Kaun SW, Wu F, Bonef B, Speck JS
173 - 179	Novel nitrogen/gallium precursor [Ga(bdma)H-2] for MOVPE Sterzer E, Beyer A, Nattermann L, Schorn W, Schlechter K, Pulz S, Sundermeyer J, Stolz W, Volz K
180 - 185	Polymorphism control of p-aminobenzoic acid by isothermal anti-solvent crystallization Garg RK, Sarkar D
186 - 191	Effect of the fused quartz particle density on nucleation and grain control of high-performance multicrystalline silicon ingots Ding JJ, Yu YY, Chen WL, Zhou XC, Wu ZY, Zhong GX, Huang XM