Journal of Crystal Growth

Journal of Crystal Growth, Vol.464 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (42 articles)

1 - 1	Proceedings of the 18th International Conference on Metal Organic Vapor Phase Epitaxy Preface Biefeld RM
2 - 7	GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient Doscher H, Hens P, Beyer A, Tapfer L, Volz K, Stolz W
8 - 13	MOVPE growth of GaP on Si with As initial coverage Navarro A, Garcia-Tabares E, Galiana B, Cano P, Rey-Stolle I, Ballesteros C
14 - 19	In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient Paszuk A, Dobrich A, Koppka C, Bruckner S, Duda M, Kleinschmidt P, Supplie O, Hannappel T
20 - 27	Reduced dislocation density in GaxIn1-xP compositionally graded buffer layers through engineered glide plane switch Schulte KL, France RM, McMahon WE, Norman AG, Guthrey HL, Geisz JF
28 - 32	Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si Shi B, Li Q, Lau KM
33 - 38	Measurement of 3-dimensional dopant distribution in InGaAs microdiscs grown selectively on Si (111) Watanabe T, Takeuchi M, Nakano Y, Sugiyama M
39 - 48	Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1-yBiy on offcut and mesa-patterned GaAs substrates Guan YX, Forghani K, Kim H, Babcock SE, Mawst LJ, Kuech TF
49 - 53	Material quality frontiers of MOVPE grown AlGaAs for minority carrier devices Heckelmann S, Lackner D, Dimroth F, Bett AW
54 - 58	Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane Chan SH, Keller S, Koksaldi OS, Gupta C, DenBaars SP, Mishra UK
59 - 63	Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications Zikova M, Hospodkova A, Pangrac J, Oswald J, Hulicius E
64 - 68	GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications Vyskocil J, Hospodkova A, Petricek O, Pangrac J, Zikova M, Oswald J, Vetushka A
69 - 74	Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots Kulkova IV, Lyasota A, Jarlov C, Rigal B, Rudra A, Dwir B, Kapon E
75 - 79	Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy Yoshida A, Tomioka K, Ishizaka F, Motohisa J
80 - 85	Magnetization in vertical MnAs/InAs heterojunction nanowires Kabamoto K, Kodaira R, Hara S
86 - 93	Stability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi junction solar cells Cho H, Toprasertpong K, Sodabanlu H, Watanabe K, Sugiyama M, Nakano Y
94 - 99	Electroluminescence-based quality characterization of quantum wells for solar cell applications Toprasertpong K, Inoue T, Delamarre A, Watanabe K, Guillemoles JF, Sugiyama M, Nakano Y
100 - 104	Large-area MoS2 deposition via MOVPE Marx M, Nordmann S, Knoch J, Franzen C, Stampfer C, Andrzejewski D, Kummell T, Bacher G, Heuken M, Kalisch H, Vescan A
105 - 111	Growth by MOCVD of In(Ga)AIN alloys, and a study of gallium contamination in these layers under nitrogen and hydrogen carrier gas Bouveyron R, Charles MB
112 - 118	Indium incorporation into InGaN: The role of the adlayer Rossow U, Horenburg P, Ketzer F, Bremers H, Hangleiter A
119 - 122	Improved structural quality of AIN grown on sapphire by 3D/2D alternation growth Guo YM, Fang YL, Yin JY, Zhang ZR, Wang B, Li J, Lu WL, Feng ZH
123 - 126	Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers Czernecki R, Grzanka E, Strak P, Targowski G, Krukowski S, Perlin P, Suski T, Leszczynski M
127 - 131	Growth of high purity N-polar (In,Ga)N films Lund C, Nakamura S, DenBaars SP, Mishra UK, Keller S
132 - 137	Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions Creighton JR, Coltrin ME, Figiel JJ
138 - 142	Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes Lee K, Lee CR, Chung TH, Park J, Leem JY, Jeong KU, Kim JS
143 - 147	In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs Gamarra P, Lacam C, Tordjman M, Medjdoub F, di Forte-Poisson MA
148 - 152	Mechanism of stress control for GaN growth on Si using AlN interlayers Suzuki M, Nakamura A, Nakano Y, Sugiyama M
153 - 158	High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence Xiao M, Zhang JC, Hao Y
159 - 163	AlGaN HEMTs on patterned resistive/conductive SiC templates Prystawko P, Sarzynski M, Nowakowska-Siwinska A, Crippa D, Kruszewski P, Wojtasiak W, Leszczynski M
164 - 167	The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers Charles M, Baines Y, Bos S, Escoffier R, Garnier G, Kanyandekwe J, Lebreton J, Vandendaele W
168 - 174	GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates Snure M, Siegel G, Look DC, Paduano Q
175 - 179	High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AIN spacer layer Ko TS, Lin DY, Lin CF, Chang CW, Zhang JC, Tu SJ
180 - 184	Low-temperature growth of AIN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode Nakamura A, Suzuki M, Fujii K, Nakano Y, Sugiyama M
185 - 189	Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs Enslin J, Mehnke F, Mogilatenko A, Bellmann K, Guttmann M, Kuhn C, Rass J, Lobo-Ploch N, Wernicke T, Weyers M, Kneissl M
190 - 196	Phase degradation in BxGa1-xN films grown at low temperature by metalorganic vapor phase epitaxy Gunning BP, Moseley MW, Koleske DD, Allerman AA, Lee SR
197 - 200	Semipolar (2021) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect Forman C, Leonard J, Yonkee B, Pynn C, Mates T, Cohen D, Farrell R, Margalith T, DenBaars S, Speck J, Nakamura S
201 - 205	MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications Fuchs C, Beyer A, Volz K, Stolz W
206 - 210	InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy Hospodkova A, Hulicius E, Pangrac J, Dominec F, Mikhailova MP, Veinger AI, Kochman IV
211 - 214	Room temperature operating InAsSb-based photovoltaic infrared sensors grown by metalorganic vapor phase epitaxy Hasegawa R, Yoshikawa A, Morishita T, Moriyasu Y, Nagase K, Kuze N
215 - 220	Sensitivity of heterointerfaces on emission wavelength of quantum cascade lasers Wang CA, Schwarz B, Siriani DF, Connors MK, Missaggia LJ, Calawa DR, McNulty D, Akey A, Zheng MC, Donnelly JP, Mansuripur TS, Capasso F
221 - 225	Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures Hubacek T, Hospodkova A, Oswald J, Kuldova K, Pangrac J
226 - 230	Near ultraviolet light emitting diodes using ZnMgO:N/ZnO hetero-junction grown by MOVPE Fujita Y, Yanase S, Nishikori H, Hiragino Y, Furubayashi Y, Lin J, Yoshida T