| 1 - 5 |
Alleviation of parasitic reactions for III-nitride epitaxy in MOCVD with a spatial separated source delivery method by controlling the main reaction type
Yang HJ, Wu HY, Hu W, Ma ZG, Jiang Y, Wang WX, Jia HG, Zhou JM, Chen H |
| 6 - 11 |
Cu-Si nanoobjects prepared by CVD on Cu/Cu5Si-substrates using various precursors (SiH4, EtSiH3, BuSiH3) with added H-2 or air
Klementova M, Krabac L, Brazda P, Palatinus L, Drinek V |
| 12 - 17 |
Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AIN on sapphire substrate
Wang HB, Sodabanlu H, Daigo Y, Seino T, Nakagawa T, Sugiyama M |
| 18 - 26 |
Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots
Kupka I, Lehmann T, Trempa M, Kranert C, Reimann C, Friedrich J |
| 27 - 33 |
Facile synthesis and structure characterization of hexagonal tungsten bronzes crystals
Lee JS, Liu HC, Peng GD, Tseng Y |
| 34 - 42 |
The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structures
Schimpke T, Avramescu A, Koller A, Fernando-Saavedra A, Hartmann J, Ledig J, Waag A, Strassburg M, Lugauer HJ |
| 43 - 47 |
Comparative study of semipolar (20(2)over-bar1), nonpolar (10(1)over-bar0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy
Sawicka M, Wolny P, Krysko M, Turski H, Szkudlarek K, Grzanka S, Skierbiszewski C |
| 48 - 54 |
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
Kim H, Choi J, Lingley Z, Brodie M, Sin Y, Kuech TF, Gopalan P, Mawst LJ |
| 55 - 59 |
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
Hestroffer K, Lund C, Koksaldi O, Li HR, Schmidt G, Trippel M, Veit P, Bertram F, Lu N, Wang QX, Christen J, Kim MJ, Mishra UK, Keller S |
| 60 - 60 |
Modeling high speed growth of large rods of cesium iodide crystals by edge-defined film-fed growth (EFG) (vol 449, pg 75, 2016)
Yeckel A |
