Journal of Crystal Growth

Journal of Crystal Growth, Vol.478 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (35 articles)

1 - 8	Observation of the growth characteristics of gas hydrate in the quiescent-type formation method using surfactant Asaoka T, Ikeda K
9 - 16	Fast growth of n-type 4H-SiC bulk crystal by gas-source method Hoshino N, Kamata I, Tokuda Y, Makino E, Kanda T, Sugiyama N, Kuno H, Kojima J, Tsuchida H
17 - 21	Growth of homogeneous Nd:LGGG single crystal plates by edge-defined film-fed growth method Mu WX, Jia ZT, Yin YR, Hu QQ, Li Y, Tao XT
22 - 27	Competition between crystalline and icosahedral order during crystal growth in bimetallic systems Gonzalez B, Bechelli S, Essafri I, Piquet V, Desgranges C, Delhommelle J
28 - 32	Development of longer Nd:LGGG crystal for high power laser application Yin YR, Tian HL, Zhang J, Mu WX, Zhang BT, Jia ZT, He JL, Tao XT
33 - 41	Origin and effective reduction of inversion domains in aluminum nitride grown by a sublimation method Shigetoh K, Horibuchi K, Nakamura D
42 - 46	A kinetics model for MOCVD deposition of AlN film based on Grove theory Pu KW, Dai XY, Miao DM, Wu SJ, Zhao TL, Hao Y
47 - 51	A multilayer nucleation model for twinning during directional solidification of multi-crystalline silicon Lin HK, Lan CW
52 - 57	Thermodynamics and nucleation mechanism of ammonium jarosite in sulfuric acid solution Liu PF, Zhang YF, Wang L, You SW, Bo J
58 - 63	Applying the X-ray diffraction analysis for estimating the height and width of nanorods in low symmetry crystal multiphase materials Mokhtari A, Soleimanian V, Dehkordi HA, Dastafkan K
64 - 70	Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers Kohen D, Nguyen XS, Made RI, Heidelberger C, Lee KH, Lee KEK, Fitzgerald EA
71 - 76	Study on the local stress induced dislocations on ((1)over-bar(1)over-bar(1)over-bar) Te face of CdTe-based crystals Fu X, Xu YD, Xu LY, Gu YX, Jia NB, Jie WQ
77 - 84	Qualitative discussion of prenucleation cluster role in crystallization of calcium carbonate under high concentration of magnesium based on experimental phenomena Zhang J, Sun YZ, Yu JG
85 - 88	Basic ammonothermal growth of bulk GaN single crystal using sodium mineralizers Shim JB, Kim GH, Lee YK
89 - 95	Low-temperature surface preparation and epitaxial growth of ZnS and Cu2ZnSnS4 on ZnS(110) and GaP(100) Harvey SP, Wilson S, Moutinho H, Norman AG, Teeter G
96 - 101	Morphology and formation mechanism in precipitation of calcite induced by Curvibacter lanceolatus strain HJ-1 Zhang CH, Li FC, Lv JJ
102 - 110	Controlling the size and morphology of precipitated calcite particles by the selection of solvent composition Konopacka-Lyskawa D, Koscielska B, Karczewski J
111 - 116	Effect of doping of KDP crystal with amino acid L-arginine on the strength properties and character of laser damage Dolzhenkova EF, Kostenyukova EI, Bezkrovnaya ON, Pritula IM
117 - 122	Kinetics and mechanisms of the transformation of precipitated amorphous calcium phosphate with a Ca/P ratio of 1:1 to calcium pyrophosphates Zyman Z, Goncharenko A, Rokhmistrov D
123 - 128	Bulk GaN substrate with overall dislocation density on the order of 10(5)/cm(2) fabricated by hydride vapor phase epitaxy Goubara S, Matsubara T, Yukizane K, Arita N, Fujimoto S, Ezaki T, Inomoto R, Yamane K, Okada N, Tadatomo K
129 - 133	Synthesis and microstructure of NiTe2 Monteiro JFHL, Marciniak MB, Jurelo AR, Siqueira EC, Dias FT, Pimentel JL
134 - 139	One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique Barick BK, Yadav S, Dhar S
140 - 145	Di-thiourea cadmium chloride crystals synthesis under UV radiation influence Trujillo LE, Chavez-Urbiola EA, Legorreta F, Chavez-Urbiola IR, Willars-Rodriguez FJ, Ramirez-Bon R, Ramirez-Cardona M
146 - 151	Ultrasonic study of elastic anisotropy of unidirectional Rochelle salt single crystals grown using the Sankaranarayanan-Ramasamy method Singaravadivelu S, Uthayakumar A, Abraham ST
152 - 158	Thermodynamic assessment and binary nucleation modeling of Sn-seeded InGaAs nanowires Ghasemi M, Selleby M, Johansson J
159 - 162	Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (100) seeding layers Schuh P, Scholer M, Wilhelm M, Syvajarvi M, Litrico G, La Via F, Mauceri M, Wellmann PJ
163 - 173	TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors Nakamura D, Kimura T, Narita T, Suzumura A, Kimoto T, Nakashima K
174 - 179	Formation of basal plane stacking faults on the (000(1)over-bar) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth Ohtomo K, Matsumoto N, Ashida K, Kaneko T, Ohtani N, Katsuno M, Sato S, Tsuge H, Fujimoto T
180 - 186	Numerical simulation of the distribution of individual gas bubbles in shaped sapphire crystals Borodin AV, Borodin VA
187 - 192	Controlling the morphology transition between step-flow growth and step-bunching growth Bellmann K, Pohl UW, Kuhn C, Wernicke T, Kneissl M
193 - 204	Effects of reaction-kinetic parameters on modeling reaction pathways in GaN MOVPE growth Zhang H, Zuo R, Zhang GY
205 - 211	Sn - Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy Talochkin AB, Timofeev VA, Gutakovskii AK, Mashanov VI
212 - 215	MOVPE growth of violet GaN LEDs on beta-Ga2O3 substrates Li D, Hoffmann V, Richter E, Tessaro T, Galazka Z, Weyers M, Trankle G
216 - 219	Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix Komissarova TA, Wang P, Paturi P, Wang X, Ivanov SV
220 - 228	Crystal growth patterns in DC and pulsed plated galvanic copper films on (111), (100) and (110) copper surfaces Brown DA, Morgan S, Peldzinski V, Bruning R