Journal of Crystal Growth

Journal of Crystal Growth, Vol.500 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (21 articles)

1 - 4	Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE Hentschel R, Gartner J, Wachowiak A, Grosser A, Mikolajick T, Schmult S
5 - 10	Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method Rost HJ, Menzel R, Siche D, Juda U, Kayser S, Kiessling FM, Sylla L, Richter T
11 - 14	Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy Sun YJ, Cheng ZY, Sheng K, Zhou Q, Sun Y, Chen P, Zhuo NZ, Wang HB, Yu XD, Heuken M, Egawa T
15 - 22	Directionally-solidified dendrite morphology with eight secondary arms in an FCC ordered phase alloy Mori Y, Harada H, Yokokawa T, Kobayashi T, Suzuki S
23 - 27	Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family Yonenaga I, Deura M, Tokumoto Y, Kutsukake K, Ohno Y
28 - 32	Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE Tile N, Ahia CC, Botha JR
33 - 37	Growth of antiperovskite oxide Ca3SnO films by pulsed laser deposition Minohara M, Yukawa R, Kitamura M, Kumai R, Murakami Y, Kumigashira H
38 - 43	The pyrochlore Ho2Ti2O7: Synthesis, crystal growth, and stoichiometry Ghasemi A, Scheie A, Kindervater J, Koohpayeh SM
44 - 51	Crystallization study of potassium sulfate-water system, metastable zone width and induction time measurements using ultrasonic, turbidity and 3D-ORM techniques Nemdili L, Koutchoukali O, Mameri F, Gouaou I, Koutchoukali MS, Ulrich J
52 - 57	Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy Senichev A, Nguyen T, Diaz RE, Dzuba B, Shirazi-HD M, Cao Y, Manfra MJ, Malis O
58 - 62	Selective-area growth of pulse-doped InAs nanowires on Si and vertical transistor application Gamo H, Tomioka K
63 - 67	Growth, thermal and spectral properties of Er3+/Yb3+: Lu0.5Gd0.5VO4 mixed crystal Ji NJ, Chen Y, Li ZQ, Wang JY, Duan XL, Jiang HD
68 - 73	Interactions between Sb and As on InAs(001) surfaces Anderson EM, Millunchick JM
74 - 79	Physical vapor transport growth of bulk Al1-xScxN single crystals Dittmar A, Wollweber J, Schmidbauer M, Klimm D, Hartmann C, Bickermann M
80 - 84	Crystal defects of Li2MoO4 scintillators grown by Bridgman method Chen P, Wei R, Jiang LW, Yang SS, Chen YP, Wang ZH, Yu HH, Chen HB
85 - 90	The influence of V/III ratio on GaN grown on patterned sapphire substrate with low temperature AlN buffer layer by hydride vapor phase epitaxy Liu NL, Wang Q, Zheng XP, Li SF, Dikme Y, Xiong H, Pang YZ, Zhang GY
91 - 97	Preparation and characterization of calcium oxalate dihydrate seeds suitable for crystal growth kinetic analyses Stankovic A, Kontrec J, Dzakula BN, Kovacevic D, Markovic B, Kralj D
98 - 103	Growth of high-perfect mixed K2NixCo1-x(SO4)(2)center dot 6H(2)O crystals for fabrication of high-efficiency UV optical filters Voloshin AE, Manomenova VL, Rudneva EB, Vasilyeva NA, Masalov VM, Zhokhov AA, Emelchenko GA
104 - 110	Homoepitaxial HVPE GaN: A potential substrate for high performance devices Freitas JA, Culbertson JC, Mahadik NA, Tadjer MJ, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M
111 - 116	Efficient iron doping of HVPE GaN Freitas JA, Culbertson JC, Glaser ER, Richter E, Weyers M, Oliveira AC, Garg VK
117 - 121	Compensated donors in semi-insulating Cd1-xMnxTe:In crystals Nykoniuk Y, Solodin S, Zakharuk Z, Dremlyuzhenko S, Rudyk B, Fochuk P