1 - 6 |
The investigation of the morphology of a decaying conic mound in the presence of repulsive and attractive step interactions Tuzemen AT, Esen M, Ozdemir M |
7 - 12 |
Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD Lumbantoruan F, Zheng XX, Huang JH, Huang RY, Mangasa F, Chang EY, Tu YY, Lee CT |
13 - 17 |
X-ray characterization technique for the assessment of surface damage in GaN wafers Letts E, Sun YM, Key D, Jordan B, Hashimoto T |
18 - 21 |
Ca-3(VO4)(2):Tm3+-A new crystalline medium for 2-mu m lasers Ivleva LI, Dunaeva EE, Voronina IS, Doroshenko ME, Papashvili AG |
22 - 26 |
Probing the dynamics of crystal nucleation via measurements of emission lifetimes in crystalloluminescence of sodium chloride Huld FT, Alexander AJ |
27 - 33 |
Observation of the growth of MAPbBr(3) single-crystalline thin film based on space-limited method Han LP, Liu C, Wu LL, Zhang JQ |
34 - 37 |
Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si Dinh DV, Parbrook PJ |
38 - 42 |
Piezoelectric Ca3TaAl3Si2O14 (CTAS): High quality 2-in. single-crystal growth and electro-elastic properties from room to high (650 degrees C) temperature Fu XW, Villora EG, Matsushita Y, Kitanaka Y, Noguchi Y, Miyayama M, Shimamura K, Ohashi N |
43 - 48 |
Trace of increasing dot size in porous silicon systems of same thicknesses Gill FS, Panwar V, Dhiman N, Juyal S, Kumar R, Mehra RM, Kumar Y |
49 - 59 |
The effect of ergocalciferol on the precipitation of calcium carbonate Amer L, Ouhenia S, Belabbas I, Chateigner D |
60 - 65 |
Effect of buffer layer and film thickness on the growth mechanism of La0.67Ca0.33MnO3 films Yang CP, Liang WS, Liu GJ, Yang HW, Wang YQ |
66 - 73 |
Determination of metastable zone width and nucleation kinetics for combined cooling and antisolvent crystallization of L-asparagine monohydrate in water-isopropanol mixture Lenka M, Sarkar D |
74 - 80 |
Growth kinetics of basic ammonothermal gallium nitride crystals Griffiths S, Pimputkar S, Kearns J, Malkowski TF, Doherty MF, Speck JS, Nakamura S |
81 - 81 |
Preface [Anonymous] |
82 - 82 |
PREFACE Freitas JA, Tuomisto F, Pimputkar S |