Journal of Crystal Growth

Journal of Crystal Growth, Vol.514 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (21 articles)

1 - 7	Islands growth control in adsorptive multilayer plasma-condensate systems Dvornichenko AV, Kharchenko DO, Lysenko IO, Kharchenko VO
8 - 12	Pseudomorphic deposition of L1(0) MnGa nanolayers at room temperature Kunimatsu K, Suzuki KZ, Mizukami S
13 - 13	Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019) Liu ZB, Nitta S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Sitar Z, Amano H
14 - 20	Preparation of dispersed metal nanoparticles in the aqueous solution of metal carboxylate and the tetra-n-butylammonium carboxylate Machida H, Sugahara T, Hirasawa I
21 - 28	Effect of surface heat dissipation on thermocapillary convection of moderate Prandtl number fluid in a shallow annular pool Zhang L, Li YR, Wu CM, Zhang L
29 - 35	Carbon-doped MBE GaN: Spectroscopic insights Pohl D, Solovyev VV, Roher S, Gartner J, Kukushkin IV, Mikolajick T, Grosser A, Schmult S
36 - 39	InSb/InAs quantum nano-stripes grown by molecular beam epitaxy and its photoluminescence at mid-infrared wavelength Srisinsuphya P, Rongrueangkul K, Khanchaitham R, Thainoi S, Kiravittaya S, Nuntawong N, Sopitpan S, Yordsri V, Thanachayanont C, Kanjanachuchai S, Ratanathammaphan S, Tandaechanurat A, Panyakeow S
40 - 44	High temperature ammonia MBE-Real way to improve crystal quality of nitride heterostructures Petrov SI, Alexeev AN, Mamaev VV, Novikov SA, Lutsenko EV, Rzheutski MV
45 - 48	Si doping mechanism in Si doped GaAsN Tsukasaki T, Hiyoshi R, Fujita M, Makimoto T
49 - 53	Reduced metal contamination from crucible and coating using a silicon nitride based diffusion barrier for the growth of cast quasi-single crystalline silicon ingots Wolny F, Krause A, Muller M, Fischer G, Neuhaus H
54 - 59	Double epitaxy of tetragonal and hexagonal phases in the FeSe system Harris SB, Camata RP
60 - 64	Strain study of epitaxial Al1-xGaxN based on first-principles theory Jin S, Li XF, Yang WX, Bian LF, Lu SL
65 - 69	Strain control of GaN grown on Si substrates using an AlGaN interlayer Deura M, Nakahara T, Momose T, Nakano Y, Sugiyama M, Shimogaki Y
70 - 82	Confined growth with slow surface kinetics: A thin film model approach Gagliardi L, Pierre-Louis O
83 - 88	X-ray photoelectron spectroscopy study of Ga nanodroplet on silica-terminated silicon surface for nanowire growth Fouquat L, Vettori M, Botella C, Benamrouche A, Penuelas J, Grenet G
89 - 97	Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy Eftychis S, Kruse JE, Tsagaraki K, Koukoula T, Kehagias T, Komninou P, Georgakilas A
98 - 102	Gain measurement of terahertz quantum cascade laser via a master-oscillator power-amplifier configuration Yu CR, Zhu H, Wang FF, Chang GL, Zhu HQ, Chen JX, Xu GY, He L
103 - 108	MBE growth of continuously-graded parabolic quantum well arrays in AlGaAs Deimert C, Wasilewski ZR
109 - 113	Thin Ge buffer layer on silicon for integration of III-V on silicon Yang JJ, Jurczak P, Cui F, Li KS, Tang MC, Billiald L, Beanland R, Sanchez AM, Liu HY
114 - 123	Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots Trempa M, Kranert C, Kupka I, Reimann C, Friedrich J
124 - 129	Cost-effective selective-area growth of GaN-based nanocolumns on silicon substrates by molecular-beam epitaxy Zhao YK, Yang WX, Lu SL, Wu YY, Zhang X, Bian LF, Li XF, Tan M