| 1 - 5 |
On the mechanisms of micropipe and macrodefect transformation in SiC during liquid phase treatment
Epelbaum BM, Hofmann D |
| 6 - 8 |
Observation of inhomogeneity in congruent LiTaO3 crystal
Hu XB, Jiang HD, Liu H, Jiang SS, Li Q, Wang JY, Zhang CQ, Teng B, Tian YL, Huang WX |
| 9 - 15 |
Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction
Sun YT, Messmer ER, Soderstrom D, Jahan D, Lourdudoss S |
| 16 - 22 |
The stress and strain in cubic films on (113), emphasizing Ge on Si(113)
Bottomley DJ, Omi H, Ogino T |
| 23 - 33 |
Nature and occurrence of defects in 6H-SiC Lely crystals
Tuominen M, Ellison A, Tuomi T, Yakimova R, Milita S, Janzen E |
| 34 - 44 |
Laser ultrasonic sensing of the melting and solidification of cadmium telluride
Queheillalt DT, Wadley HNG |
| 45 - 49 |
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
Fu Y, Yang H, Zhao DG, Zheng XH, Li SF, Sun YP, Feng ZH, Wang YT, Duan LH |
| 50 - 58 |
Modeling halogen chemical vapor deposition for III-V semiconductor compounds
Mimila-Arroyo J, Diaz-Reyes J |
| 59 - 66 |
Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method
Kinoshita K, Kato H, Iwai M, Tsuru T, Muramatsu Y, Yoda S |
| 67 - 72 |
Experimental observation of local heteroepitaxy between cubic-C3N4 and Ti2N in CNx/TiNy bilayers prepared by ion beam sputtering
Tian YJ, Yu DL, He JL, Xiao FR, Wang TS, Li DC, Li L, Zheng G, Yanagisawa O |
| 73 - 78 |
Epitaxial growth of AlN on (La,Sr)(Al,Ta)O-3 substrate by laser MBE
Ohta J, Fujioka H, Sumiya M, Koinuma H, Oshima M |
| 79 - 91 |
Growth of mercuric iodide single crystals by physical vapor transport: development of a new "monothermal" furnace - Non-destructive bulk characterization by a laboratory hard X-ray method
Bernard L, Awitor KO, Coupat B, Fournier JP, Bastie P, Hamelin B |
| 92 - 95 |
Synthesis of SnS2 nanocrystals via a solvothermal process
Hai B, Tang KB, Wang CR, An CH, Yang Q, Shen GZ, Qian YT |
