Journal of Crystal Growth

Journal of Crystal Growth, Vol.234, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (38 articles)

1 - 4	Diamond formation using Fe3C as a carbon source at high temperature and high pressure Yin LW, Li MS, Cui HJ, Zou ZD, Liu P, Hao ZY
5 - 8	Crystallization of diamond from CO2 fluid at high pressure and high temperature Yamaoka S, Kumar MDS, Kanda H, Akaishi M
9 - 11	Formation of alpha-Si3N4 whiskers with addition of NaN3 as catalyst Cao YG, Chen H, Li JT, Ge CC, Tang SY, Tang JX, Chen X
12 - 24	Te distribution in space grown GaSb Voloshin AE, Nishinaga T, Ge P, Huo C
25 - 31	Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy Li ZQ, Bang HJ, Piao GX, Sawahata J, Akimoto K, Kinoshita H, Watanabe K
32 - 46	Global simulation of a silicon Czochralski furnace Li MW, Li YR, Imaishi N, Tsukada T
47 - 62	Controlling transport phenomena in the Czochralski crystal growth process Gunzburger M, Ozugurlu E, Turner J, Zhang H
63 - 69	Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE Chaussende D, Ferro G, Monteil Y
70 - 76	Catalytic growth of high quality GaN micro-crystals Ahn SH, Lee SH, Nahm KS, Suh EK, Hong MH
77 - 84	Statistical investigation on morphology development of gallium nitride in initial growth stage Yuan HR, Lu DC, Liu XL, Chen Z, Han P, Wang XH, Wang D
85 - 90	Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats Gao YZ, Kan H, Gao FS, Gong XY, Yamaguchi T
91 - 98	Detached growth of gallium doped germanium Dold P, Szofran FR, Benza KW
99 - 104	Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy Lu LW, Fong WK, Zhu CF, Leung BH, Surya C, Wang J, Ge WK
105 - 109	Growth of Si-doped InAs quantum dots and annealing effects on size distribution Kim JS, Yu PW, Leem JY, Lee JI, Noh SK, Kim JS, Kim GH, Kang SK, Ban SI, Kim SG, Jang YD, Lee UH, Yim JS, Lee D
110 - 114	Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy Kim GH, Choi JB, Leem JY, Lee JI, Noh SK, Kim JS, Kim JS, Kang SK, Ban SI
115 - 120	A geometrical model of GaN morphology in initial growth stage Yuan HR, Chen Z, Lu DC, Liu XL, Han PD, Wang XH
121 - 131	Thermal conductivities of silicon and germanium in solid and liquid states measured by non-stationary hot wire method with silica coated probe Yamasue E, Susa M, Fukuyama H, Nagata K
132 - 138	Kinetics of self-assembled island formation: Part I - Island density Johansson J, Seifert W
139 - 144	Kinetics of self-assembled island formation: Part II - Island size Johansson J, Seifert W
145 - 152	Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN Lu DC, Duan SK
153 - 158	Study on the lateral growth of silicon films from metal solutions with temperature gradient Kita K, Wen CJ, Otomo J, Yamada K, Komiyama H, Takahashi H
159 - 163	Growth of organic molecular single crystal trans-stilbene by selective self seeding from vertical Bridgman technique Arulchakkaravarthi A, Jayavel P, Santhanaraghavan P, Ramasamy P
164 - 170	Carrier concentration gradient generated in p-type PbTe crystals by unidirectional solidification Dariel MP, Dashevsky Z, Jarashnely A, Shusterman S, Horowitz A
171 - 175	Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties Wang YW, Zhang LD, Wang GZ, Peng XS, Chu ZQ, Liang CH
176 - 183	Crystallization kinetics and mechanism of the LixNi2-xO2 (0 < x <= 1) from Li2CO3 and NiO Lin SP, Fung KZ, Hon YM, Hon MH
184 - 189	Crystal growth of undoped semi-insulating CdTe Zha M, Gorog T, Zappettini A, Bissoli F, Zanotti L, Paorici C
190 - 196	Growth and stoichiometry of THM-bulk single crystals of CuAlSe2 Shim Y, Horikawa S, Kikuno Y, Yamamoto N
197 - 201	Characterization of strain distribution in quantum dots by X-ray diffraction Uragami T, Acosta AS, Fujioka H, Mano T, Ohta J, Ofuchi H, Oshima M, Takagi Y, Kimura M, Suzuki T
202 - 206	X-ray diffraction study of crystallographic parameters and Debye temperature of C-60 single crystals Shebanovs L, Maniks J, Kalnacs J
207 - 219	Influence of supersaturation and structurally related additives on the crystal growth of alpha-lactose monohydrate Garnier S, Petit S, Coquerel G
220 - 226	Growth kinetics of CO2 hydrate just below melting point of ice Kawamura T, Komai T, Yamamoto Y, Nagashima K, Ohga K, Higuchi K
227 - 236	Experimental simulations of the biomineralization phenomena in avian eggshells using BaCO3 aggregates grown inside an alkaline silica matrix Reyes-Grajeda JP, Jauregui-Zuniga D, Batina N, Salmon-Salazar M, Morenoa A
237 - 246	The growth and dissolution of sodium chloride in a fluidized bed crystallizer Al-Jibbouri S, Ulrich J
247 - 254	The effect of amphiphilic additives on the growth and morphology of Aspergillus niger acid proteinase A crystals Tanaka S, Ataka M, Kubota T, Soga T, Homma K, Lee WC, Tanokura M
255 - 262	Morphological control of Ca3Al2(OH)(12) Fogg AM, Freij AJ, Oliveira A, Rohl AL, Ogden MI, Parkinson GM
263 - 266	Sonochemical synthesis of copper selenides nanocrystals with different phases Xu S, Wang H, Zhu JJ, Chen HY
267 - 271	Single crystal growth and characterization of the nonlinear optical crystal L-arginine hydrofluoride Pal T, Kar T
272 - 278	Usefulness of experiments with model fluid for thermocapillary convection-effect of Prandtl number on two-dimensional thermocapillary convection Zeng Z, Mizuseki H, Shimamura K, Fukuda T, Kawazoe Y, Higashino K