Journal of Crystal Growth

Journal of Crystal Growth, Vol.243, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (31 articles)

1 - 7	The origins of the International Crystal Growth Conferences, the International Organisation for Crystal Growth and the Journal of Crystal Growth Hurle DTJ
8 - 12	Properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy Higashino T, Kawamura Y, Fujimoto M, Amano M, Yokoyama T, Inoue N
13 - 18	ZnO thin film grown on silicon by metal-organic chemical vapor deposition Wang XQ, Yang SR, Yang XT, Liu D, Zhang YT, Wang JH, Yin JZ, Liu DL, Ong HC, Du GT
19 - 24	The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method Chen Z, Lu DC, Han P, Liu XL, Wang XH, Li YF, Yuan HR, Lu Y, Bing LD, Zhu QS, Wang ZG, Wang XF, Yan L
25 - 29	A novel application to quantum dot materials to the active region of superluminescent diodes Zhang ZY, Meng XQ, Jin P, Li CM, Qu SC, Xu B, Ye XL, Wang ZG
30 - 40	Thermal desorption effects in chemical vapor deposition of silicon nanoparticles Leach WT, Zhu JH, Ekerdt JG
41 - 46	Some properties of carbon-doped GaAs using carbon tetrabromide in solid-source molecular beam epitaxy Zhang R, Yoon SF, Tan KH, Sun ZZ, Huang QF
47 - 54	Development of three-dimensional dislocation density analysis code for annealing process of single crystal ingot Miyazaki N, Kutsukake H, Kumamoto A
55 - 65	Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system Kakimoto K, Tashiro A, Shinozaki T, Ishii H, Hashimoto Y
66 - 70	Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing Lee DY, Kim JS, Kim DL, Kim KH, Son JS, Kim IS, Han BK, Bae IH
71 - 76	Strain relaxation of InP film directly grown on GaAs patterned compliant substrate Zhang ZC, Yang SY, Zhang FQ, Li DB, Chen YH, Wang ZG
77 - 86	Defect structure of Ge-doped CdTe Fiederle M, Babentsov V, Franc J, Fauler A, Benz KW, James RB, Cross E
87 - 93	Optimization of process conditions of selective epitaxial growth for elevated source/drain CMOS transistor Nakahata T, Sugihara K, Maruno S, Abe Y, Ozeki T
94 - 102	Determination of crystal misorientation in epitaxial lateral overgrowth of GaN Chen WM, McNally PJ, Jacobs K, Tuomi T, Danilewsky AN, Zytkiewicz ZR, Lowney D, Kanatharana J, Knuuttila L, Riikonen J
103 - 107	Investigations of growth of self-assembled GaInN-GaN islands on SiC substrate by metalorganic vapor phase epitaxy Kobayashi Y, Perez-Solorzano V, Off J, Kuhn B, Grabeldinger H, Schweizer H, Scholz F
108 - 116	Magnetic stabilization of the buoyant convection in the liquid-encapsulated Czochralski process Walker JS, Henry D, BenHadid H
117 - 123	Growth and characterization of US and doped CdS single crystals Sankar N, Sanjeeviraja C, Ramachandran K
124 - 128	Generation of misfit dislocations in high indium content InGaN layer grown on GaN Cho HK, Yang GM
129 - 133	Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy Kawasaki K, Nakamatsu I, Hirayama H, Tsutsui K, Aoyagi Y
134 - 142	Growth of epitaxial multilayers consisting of alternately stacked superconducting YBa2Cu3O7-delta and colossal magnetoresistive La1-xPbxMnO3 layers Singh A, Aswal DK, Sen S, Viswanadham CS, Goswami GL, Gupta LC, Gupta SK, Yakhmi JV, Sahni VC
143 - 150	Process of crystallization in thin amorphous tin oxide film Kobayashi T, Kimura Y, Suzuki H, Sato T, Tanigaki T, Saito Y, Kaito C
151 - 156	The growth and annealing of single crystalline ZnO films by low-pressure MOCVD Ye JD, Gu SL, Zhu SM, Chen T, Hu LQ, Qin F, Zhang R, Shi Y, Zheng YD
157 - 163	Growth of Bi4Ge3O12 single crystal by the micro-pulling-down method from bismuth rich composition Shim JB, Lee JH, Yoshikawa A, Nikl M, Yoon DH, Fukuda T
164 - 169	Thin film crystal growth of BaZrO3 at low oxygen partial pressure Kitano Y, Matsui T, Fujimura N, Morii K, Ito T
170 - 184	Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers Danielsson O, Henry A, Janzen E
185 - 189	Fabrication of periodic domain structure in beta'-Gd-2(MoO4)(3) crystal Yuan QX, Ren TW, Luo GZ, Pan SK, Xu J, Zhu YY, Zhu SN
190 - 203	Effects of Tl on the electrocrystallisation of thick Au layers from KAu(CN)(2) solutions Bozzini B, Fanigliulo A
204 - 213	Dynamics of crystal size distributions with size-dependent rates Madras G, McCoy BJ
214 - 217	Low-temperature hydrothermal synthesis of pure metastable gamma-manganese sulfide (MnS) crystallites Zhang YC, Wang H, Wang B, Yan H, Yoshimura M
218 - 223	Transmission electron microscopy observations on fine structures of shish-kebab crystals of isotactic polystyrene by partial melting Liu TX, Tjiu WC, Petermann J
224 - 229	Carbon nanotube synthesis using a magnetic fluid via thermal chemical vapor deposition Cho YS, Choi GS, Hong SY, Kim D