Journal of Crystal Growth

Journal of Crystal Growth, Vol.281, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (27 articles)

1 - 1	Bulk nitride workshop - Preface Freitas JA, Sitar Z
3 - 3	Jose Roberto Leite (1942-2004) - Obituary Freitas JA
5 - 10	Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient Feigelson BN, Henry RL
11 - 16	Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method Bockowski M, Grzegory I, Borysiuk J, Kamler G, Lucznik B, Wroblewski M, Kwiatkowski P, Jasik K, Krukowski S, Porowski S
17 - 31	Growth of thick GaN layers with hydride vapour phase epitaxy Monemar B, Larsson H, Hemmingsson C, Ivanov IG, Gogova D
32 - 37	Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications Storm DF, Katzer DS, Mittereder JA, Binari SC, Shanabrook BV, Xu X, McVey DS, Vaudo RP, Brandes GR
38 - 46	Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates Lucznik B, Pastuszka B, Grzegory I, Bockowski M, Kamler G, Litwin-Staszewska E, Porowski S
47 - 54	Thermodynamic analysis of AlGaNHVPE growth Koukitu A, Kikuchi J, Kangawa Y, Kumagai Y
55 - 61	Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers Paskova T, Darakchieva V, Paskov P, Birch J, Valcheva E, Persson POA, Arnaudov B, Tungasmitta S, Monemar B
62 - 67	Growth of thick AlN layers by hydride vapor-phase epitaxy Kumagai Y, Yamane T, Koukitu A
68 - 74	AlN bulk crystals grown on SiC seeds Dalmau R, Schlesser R, Rodriguez BJ, Nemanich RJ, Sitar Z
75 - 80	Crucible materials for growth of aluminum nitride crystals Schlesser R, Dalmau R, Zhuang D, Collazo R, Sitar Z
81 - 86	Sublimation growth of AlN crystals: Growth mode and structure evolution Yakimova R, Kakanakova-Georgieva A, Yazdi GR, Gueorguiev GK, Syvajarvi M
87 - 92	Thick AlN layers grown by HVPE Kovalenkov O, Soukhoveev V, Ivantsov V, Usikov A, Dmitriev V
93 - 100	Sublimation growth of AlN bulk crystals in Ta crucibles Mokhov EN, Avdeev OV, Barash IS, Chemekova TY, Roenkov AD, Segal AS, Wolfson AA, Makarov YN, Ramm MG, Helava H
101 - 106	Optoelectronic devices on bulk GaN Figge S, Bottcher T, Dennemarck J, Kroger R, Paskova T, Monemar B, Hommel D
107 - 114	Properties of InGaN blue laser diodes grown on bulk GaN substrates Perlin P, Suski T, Leszczynski M, Prystawko P, Swietlik T, Marona L, Wisniewski P, Czernecki R, Nowak G, Weyher JL, Kamler G, Borysiuk J, Litwin-Staszewska E, Dmowski L, Piotrzkowski R, Franssen G, Grzanka S, Grzegory I, Porowski S
115 - 124	Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight Mymrin VF, Bulashevich KA, Podolskaya NI, Karpov SY
125 - 134	Defects in p-doped bulk GaN crystals grown with Ga polarity Liliental-Weber Z, Tomaszewicz T, Zakharov D, O'Keefe MA
135 - 142	Defects in GaN single crystals and homoepitaxial structures Weyher JL, Kamler G, Nowak G, Borysiuk J, Lucznik B, Krysko M, Grzegory I, Porowski S
143 - 150	Identification of donors, acceptors, and traps in bulk-like HVPE GaN Look DC, Fang ZQ, Claflin B
151 - 160	Electronic and optical properties of wurztzie and zinc-blende TlN and AlN da Silva AF, Dantas NS, de Almeida JS, Ahuja R, Persson C
161 - 167	Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques Jursenas S, Miasojedovas S, Zukauskas A
168 - 182	Optical studies of bulk and homoepitaxial films of III-V nitride semiconductors Freitas JA
183 - 187	Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire Miasojedovas S, Jursenas S, Zukauskas A, Ivanov VY, Godlewski M, Leszczynski M, Perlin P, Suski T
188 - 193	Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film Silveira E, Freitas JA, Slack GA, Schowalter LJ, Kneissl M, Treat DW, Johnson NM
194 - 201	Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures Knap W, Skierbiszewski C, Dybko K, Lusakowski J, Siekacz M, Grzegory I, Porowski S