1 - 4 |
Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers Strittmatter A, Teepe M, Knollenberg C, Johnson NM |
5 - 8 |
Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE Rajpalke MK, Bhat TN, Roul B, Kumar M, Misra P, Kukreja LM, Sinha N, Krupanidhi SB |
9 - 12 |
Hydrogen etching on the surface of GaN for producing patterned structures Yeh YH, Chen KM, Wu YH, Hsu YC, Lee WI |
13 - 20 |
The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy Sadler TC, Kappers MJ, Oliver RA |
21 - 29 |
Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron X-ray topography Kallinger B, Polster S, Berwian P, Friedrich J, Muller G, Danilewsky AN, Wehrhahn A, Weber AD |
30 - 33 |
Dopant concentration dependence of structure, optical, and magnetic properties of ZnO:Fe thin films Hong RJ, Wen HR, Liu CM, Chen JL, Liao JS |
34 - 38 |
Self-catalyzed vapor-liquid-solid growth of InP/InAsP core-shell nanopillars Evoen V, Zhou HL, Gao L, Pozuelo M, Liang BL, Tatebeyashi J, Kodambaka S, Huffaker DL, Hicks RF |
39 - 42 |
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD Shi K, Yang AL, Wang J, Song HP, Xu XQ, Sang L, Wei HY, Yang SY, Liu XL, Zhu QS, Wang ZG |
43 - 47 |
Growth angle and melt meniscus of the RF-heated floating zone in silicon crystal growth Wunscher M, Ludge A, Riemann H |
48 - 52 |
Ga and In incorporation rates in Ga1-xInxAs growth by chemical beam epitaxy Ghita D, Plaza J, Sanchez M, Climent-Font A, Garcia BJ |
53 - 57 |
Micro-Raman mapping on layers for crystalline silicon thin-film solar cells Kunz T, Hessmann MT, Meidel B, Brabec CJ |
58 - 61 |
Diamond film growth on the Mo-Re alloy foil Wu XB, Yu ZM, Gong YL, Wang JA, Tian MK |
62 - 65 |
Platinum-catalyst-assisted metalorganic vapor phase epitaxy of InN Sasamoto K, Sugita K, Hashimoto A, Yamamoto A |
66 - 70 |
Minimization of wafer bowing in GaN-based vertical light-emitting diodes by selective area growth using metal-organic chemical vapor deposition Ryu JH, Chandramohan S, Kim HY, Kim HK, Kang JH, Hong CH, Cho HK, Song HD, Kwon HK |
71 - 75 |
Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy Lieten RR, Richard O, Degroote S, Leys M, Bender H, Borghs G |
76 - 80 |
Effect of tellurium deposition rate on the properties of Cu-In-Te based thin films and solar cells Mise T, Nakada T |
81 - 84 |
Growth and characterization of zirconium oxide thin films on silicon substrate Kuei PY, Chou JD, Huang CT, Ko HH, Su SC |
85 - 91 |
Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition Schenk HPD, Frayssinet E, Bayard A, Rondi D, Cordier Y, Kennard M |
92 - 96 |
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Huang Y, Ryou JH, Dupuis RD, D'Costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL |
97 - 103 |
Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy Yang Z, Zuo Z, Zhou HM, Beyermann WP, Liu JL |
104 - 107 |
The effect of Tb doped PbTiO3 inducing layer on texture and tunable property of sol-gel derived Pb0.4Sr0.6TiO3 thin films grown on ITO/glass substrate Li XT, Wang B, Weng WJ, Han GR, Song CL, Ma N, Du PY |
108 - 112 |
Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments Fujii T, Yoshii N, Kumagai Y, Koukitu A |
113 - 118 |
Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC Volkova A, Ivantsov V, Leung L |
119 - 122 |
Growth of Zn3As2 on GaAs by liquid phase epitaxy and their characterization Nagarajan M, Sudhakar S, Lourdudoss S, Baskar K |
123 - 128 |
Flux growth of ZnO crystals doped by transition metals Sofer Z, Sedmidubsky D, Huber S, Hejtmanek J, Marysko M, Jurek K, Mikulics M |
129 - 135 |
Epitaxial lateral overgrowth of non-polar GaN(1 (1)over-bar 0 0) on Si(112) patterned substrates by MOCVD Izyumskaya N, Liu SJ, Avrutin V, Ni XF, Wu M, Ozgur U, Metzner S, Bertram F, Christen J, Zhou L, Smith DJ, Morkoc H |
136 - 140 |
Effects of post-annealing temperature on structural, optical, and electrical properties of MgxZn1-xO films by RF magnetron sputtering Li J, Huang JH, Song WJ, Zhang YL, Tan RQ, Yang Y |
141 - 145 |
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching Wei TB, Yang JK, Hu Q, Duan RF, Huo ZQ, Wang JX, Zeng YP, Wang GH, Li JM |
146 - 150 |
Self-limiting nature in atomic-layer epitaxy of rutile thin films from TiCl4 and H2O on sapphire (001) substrates Kumagai H, Masuda Y, Shinagawa T |
151 - 156 |
Effects of oxide buffer layers on the microstructure and electrical properties of PLZST 2/87/10/3 antiferroelectric thin films Hao XH, Zhai JW, Yue ZX, Zhou J, Yang JC, An SL |
157 - 162 |
Growth and characteristic of Sr3Tb(BO3)(3) crystal Lu JY, Guo FY, Chen JZ |
163 - 170 |
Application of solution techniques for rapid growth of organic crystals Zaitseva N, Carman L, Glenn A, Newby J, Faust M, Hamel S, Cherepy N, Payne S |
171 - 179 |
Structural evolution of SnO2 nanostructure from core-shell faceted pyramids to nanorods and its gas-sensing properties Das S, Kim DY, Choi CM, Hahn YB |
180 - 184 |
Aqueous synthesis of single-crystalline ZnO prisms on graphite substrates Hamada T, Fujii E, Chu DW, Kato K, Masuda Y |
185 - 189 |
On-line concentration measurement for anti-solvent crystallization of beta-artemether using UV-vis fiber spectroscopy Zhang Y, Jiang YB, Zhang DK, Li KX, Qian Y |
190 - 195 |
Physicochemical properties of artificial proteins that accelerate nucleation of crystalline calcium phosphate Tsuji T, Onuma K, Yamamoto A, Iijima M, Shiba K |
196 - 201 |
A comparative study on pure, L-arginine and glycine doped ammonium dihydrogen orthophosphate single crystals grown by slow solvent evaporation and temperature-gradient method Pattanaboonmee N, Ramasamy P, Yimnirun R, Manyum P |
202 - 206 |
Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD Huang SJ, Fan BF, Xian YL, Zheng ZY, Wu ZS, Jiang H, Wang G |
207 - 212 |
Studies on conventional and Sankaranarayanan-Ramasamy (SR) method grown ferroelectric glycine phosphite (GPI) single crystals Pandian MS, Pattanaboonmee N, Ramasamy P, Manyum P |
213 - 219 |
Determining the primary nucleation and growth mechanism of cloxacillin sodium in methanol-butyl acetate system Zhi MJ, Wang YL, Wang JK |
220 - 226 |
Effects of the rate of supersaturation generation on polymorphic crystallization of m-hydroxybenzoic acid and o-aminobenzoic acid He GW, Wong ABH, Chow PS, Tan RBH |
227 - 230 |
Two routes of forming nanorods on the base of nanoparticles Zhang LN, Li DM, Mu JJ, Chen HY, Chen LX, Yang HB, Gao CX, Schattschneider P |
231 - 238 |
The influence of xanthan on the crystallization of calcium carbonate Yang XD, Xu GY |
239 - 245 |
Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace Gao B, Nakano S, Kakimoto K |
246 - 251 |
Crystals of the hydrogenase maturation factor HypF N-terminal domain grown in microgravity, display improved internal order Ponassi M, Felli L, Parodi S, Valbusa U, Rosano C |
252 - 257 |
Intersubband transition at 1.55 mu m in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770 degrees C Yang JS, Sodabanlu H, Sugiyama M, Nakano Y, Shimogaki Y |
258 - 263 |
Peculiarities of crystallization at high undercooling: Analysis of the simulation data for aluminum Ovrutsky AM, Prokhoda AS |
264 - 267 |
Synthesis and microstructural properties of ZnO nanorods on Ti-buffer layers Kwak CH, Kim BH, Park CI, Seo SY, Kim SH, Han SW |
268 - 273 |
Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs-AlGaAs core-shell nanowires grown on a pre-patterned Si (111) substrate Bailon-Somintac MF, Ibanez JJ, Jaculbia RB, Loberternos RA, Defensor MJ, Salvador AA, Somintac AS |
274 - 278 |
Influence of starting zeolite on synthesis of RUT type zeolite by interzeolite conversion method Itakura M, Ota K, Shibata S, Inoue T, Ide Y, Sadakane M, Sano T |
279 - 284 |
Increasing the growth velocity of coupled eutectics in directional solidification of off-eutectic alloys Li SM, Quan QR, Li XL, Fu HZ |
285 - 292 |
Grain refinement in a AlZnMgCuTi alloy by intensive melt shearing: A multi-step nucleation mechanism Li HT, Xia M, Jarry P, Scamans GM, Fan Z |
293 - 297 |
Growth improvement and characterization of AgGaxIn1-xSe2 chalcopyrite crystals using the horizontal Bridgman technique Santos-Ortiz R, Tupitsyn E, Nieves I, Bhattacharya P, Burger A |
298 - 301 |
Effects of substrate orientation on aluminum grown on MgAl2O4 spinel using molecular beam epitaxy Lin Y, Norman AG, McMahon WE, Moutinho HR, Jiang CS, Ptak AJ |
302 - 305 |
Shape evolution of NiS2 minicrystals via thermodynamic controlled growth Zhou XF, Lin L, Wang W, Wang SY |
306 - 309 |
Vertical Bridgman growth and characterization of large ZnGeP2 single crystals Xia SX, Wang M, Yang CH, Lei ZT, Zhu GL, Yao BQ |
310 - 323 |
Existence, stability, and nonlinear dynamics of detached Bridgman growth states under zero gravity Yeckel A, Derby JJ |
324 - 330 |
Polyhedral to nearly spherical morphology transformation of silver microcrystals grown from vapor phase Li CR, Lu NP, Mei J, Dong WJ, Zheng YY, Gao L, Tsukamoto K, Cao ZX |
331 - 335 |
Crystal growth and spectral properties of Nd3+:Ca9Gd(VO4)(7) crystal Li LY, Wang GJ, Huang YS, Zhang LZ, Lin ZB, Wang GF |
336 - 340 |
Structure and chemical order in FeRh nanolayers epitaxially grown on MgO(001) Ayoub JP, Gatel C, Roucau C, Casanove MJ |
341 - 348 |
Single crystal growth and physical properties of superconducting ferro-pnictides Ba(Fe, Co)(2)As-2 grown using self-flux and Bridgman techniques Aswartham S, Nacke C, Friemel G, Leps N, Wurmehl S, Wizent N, Hess C, Klingeler R, Behr G, Singh S, Buchner B |
349 - 352 |
Preparation and characterization of CdGeAs2 crystal by modified vertical Bridgman method He ZY, Zhao BJ, Zhu SF, Li JW, Zhang Y, Du WJ, Huang W, Chen BJ |
353 - 358 |
Effect of solvents on stabilization of micro drug particles Desai C, Meng XX, Yang DC, Wang XQ, Akkunuru V, Mitra S |
359 - 364 |
High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition Xue JS, Hao Y, Zhou XW, Zhang JC, Yang CK, Ou XX, Shi LY, Wang H, Yang LA, Zhang JF |
365 - 369 |
Thickness-dependent structural transition in GaAs nanocrystals grown on Si (111) surface Yasuda H, Matsumoto K, Furukawa T, Imamura M, Nitta N, Mori H |
370 - 373 |
Role of oxygen in structural properties of annealed CuAlO2 films Lan W, Pan JQ, Zhu CQ, Wang GQ, Su Q, Liu XQ, Xie EQ, Yan H |