Journal of Crystal Growth

Journal of Crystal Growth, Vol.315, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (68 articles)

1 - 4	In situ curvature monitoring for metal-organic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells Sugiyama M, Sugita K, Wang YP, Nakano Y
5 - 9	Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate Hoffmann V, Knauer A, Brunner C, Einfeldt S, Weyers M, Trankle G, Haberland K, Zettler JT, Kneissl M
10 - 15	Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment Doscher H, Bruckner S, Dobrich A, Hohn C, Kleinschmidt P, Hannappel T
16 - 21	Indirect in situ characterization of Si(100) substrates at the initial stage of III-V heteroepitaxy Doscher H, Supplie O, Bruckner S, Hannappel T, Beyer A, Ohlmann J, Volz K
22 - 27	Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (100) Barrigon E, Galiana B, Rey-Stolle I
28 - 31	Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) Si substrate Kunert B, Liebich S, Beyer A, Fritz R, Zinnkann S, Volz K, Stolz W
32 - 36	Growth of high quality InP layers in STI trenches on miscut Si (001) substrates Wang G, Leys MR, Nguyen ND, Loo R, Brammertz G, Richard O, Bender H, Dekoster J, Meuris M, Heyns MM, Caymax M
37 - 47	GaP-nucleation on exact Si (001) substrates for III/V device integration Volz K, Beyer A, Witte W, Ohlmann J, Nemeth I, Kunert B, Stolz W
48 - 52	InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers Cederberg JG, Overberg ME
53 - 56	High material-efficiency MOVPE of GaAs without degradation of photovoltaic performances Onitsuka R, Sugiyama M, Nakano Y
57 - 60	Growth and characterization of heavily selenium doped GaAs using MOVPE Maassdorf A, Hoffmann M, Weyers M
61 - 63	Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells Ebert C, Pulwin Z, Byrnes D, Paranjpe A, Zhang W
64 - 67	Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy Sato T, Mitsuhara M, Iga R, Kanazawa S, Inoue Y
68 - 73	Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications Garrod TJ, Kirch J, Dudley P, Kim S, Mawst LJ, Kuech TF
74 - 77	Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes Bugge F, Mogilatenko A, Zeimer U, Brox O, Neumann W, Erbert G, Weyers M
78 - 81	MOVPE growth and properties of light emitting diodes with an incorporated InMnAs ferromagnetic layer Novak J, Telek P, Vavra I, Hasenohrl S, Reiffers M
82 - 86	MOVPE of CuGaSe2 on GaAs in the presence of a CuxSe secondary phase Gutay L, Larsen JK, Guillot J, Muller M, Bertram F, Christen J, Siebentritt S
87 - 90	A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy Jha S, Wiedmann MK, Kuech TF
91 - 95	Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography Jha S, Wiedmann MK, Kuan TS, Song XY, Babcock SE, Kuech TF
96 - 101	Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1-y metamorphic buffer layers on InP substrates Kirch J, Kim TW, Konen J, Mawst LJ, Kuech TF, Kuan TS
XI - XI	15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV) Lake Tahoe Hyatt Regency, Incline Village, NV 23-28 May 2010 Preface Wang C, Bhat R, Bour D, Caneau C, Kuech T
102 - 105	InAs quantum dot growth on planar InP (100) by metalorganic vapor-phase epitaxy with a thin GaAs interlayer Yuan JY, Wang H, van Veldhoven RPJ, Notzel R
106 - 109	In situ CBrCl3 etching to control size and density of InAs/GaAs quantum dots Koizumi A, Imanishi H, Uchida K, Nozaki S
110 - 113	Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Hospodkova A, Pangrac J, Oswald J, Hazdra P, Kuldova K, Vyskocil J, Hulicius E
114 - 118	Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3 mu m band for silicon photonics Rajesh M, Bordel D, Kawaguchi K, Faure S, Nishioka M, Augendre E, Clavelier L, Guimard D, Arakawa Y
119 - 122	Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots Dimastrodonato V, Mereni LO, Young RJ, Pelucchi E
123 - 126	InP/AlGaInP quantum dot laser emitting at 638 nm Schulz WM, Eichfelder M, Rossbach R, Jetter M, Michler P
127 - 130	Pulsed single-photon resonant-cavity quantum dot LED Schulz WM, Eichfelder M, Reischle M, Kessler C, Rossbach R, Jetter M, Michler P
131 - 133	Growth and characterization of electrically pumped red-emitting VCSEL with embedded InP/AlGaInP quantum dots Eichfelder M, Schulz WM, Reischle M, Wiesner M, Rossbach R, Jetter M, Michler P
134 - 137	Epitaxial InP nanowire growth from Cu seed particles Hillerich K, Messing ME, Wallenberg LR, Deppert K, Dick KA
138 - 142	Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence Bolinsson J, Mergenthaler K, Samuelson L, Gustafsson A
143 - 147	Axial pn-junctions formed by MOVPE using DEZn and TESn in vapor-liquid-solid grown GaAs nanowires Regolin I, Gutsche C, Lysov A, Blekker K, Li ZA, Spasova M, Prost W, Tegude FJ
148 - 151	Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE Yoshimura M, Tomioka K, Hiruma K, Hara S, Motohisa J, Fukui T
152 - 156	Au-catalyzed self assembly of GeTe nanowires by MOCVD Longo M, Wiemer C, Salicio O, Fanciulli M, Lazzarini L, Rotunno E
157 - 159	Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer Lohn AJ, Li XM, Kobayashi NP
160 - 163	Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth Goh WH, Patriarche G, Bonanno PL, Gautier S, Moudakir T, Abid M, Orsal G, Sirenko AA, Cai ZH, Martinez A, Ramdane A, Le Gratiet L, Troadec D, Soltani A, Ougazzaden A
164 - 167	N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties Bergbauer W, Strassburg M, Kolper C, Linder N, Roder C, Lahnemann J, Trampert A, Fundling S, Li SF, Wehmann HH, Waag A
168 - 173	Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC Caban P, Strupinski W, Szmidt J, Wojcik M, Gaca J, Kelekci O, Caliskan D, Ozbay E
174 - 177	The structural and optical properties of selectively grown a-plane GaN with LT-GaN and HT-AlN buffer layers Kang BK, Kang SM, Song KM, Yoon DH
178 - 182	Reduced anisotropy of a-plane GaN layers grown by metalorganic vapor phase epitaxy Song KM, Kim JM, Lee DH, Kang DH, Park WK, Shin CS, Ko CG, Hwang SM, Yoon DH
183 - 187	Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor Phase Epitaxy Tao YB, Yu TJ, Yang ZY, Ling D, Wang Y, Chen ZZ, Yang ZJ, Zhang GY
188 - 191	Void shape control in GaN re-grown on hexagonally patterned mask-less GaN Ali M, Romanov AE, Suihkonen S, Svensk O, Torma PT, Sopanen M, Lipsanen H, Odnoblyudov MA, Bougrov VE
192 - 195	Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template Hsu HC, Su YK, Huang SJ, Cheng SH, Cheng CY
196 - 199	Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates Ishikawa H, Shimanaka K
200 - 203	Growth of AlGaN and AlN on patterned AlN/sapphire templates Kueller V, Knauer A, Brunner F, Zeimer U, Rodriguez H, Kneissl M, Weyers M
204 - 207	AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation Cheng K, Degroote S, Leys M, Medjdoub F, Derluyn J, Sijmus B, Germain M, Borghs G
208 - 210	High-resolution X-ray diffraction investigations of the microstructure of MOVPE grown a-plane AlGaN epilayers Laskar MR, Ganguli T, Hatui N, Rahman AA, Gokhale MR, Bhattacharya A
211 - 215	Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate Drechsel P, Riechert H
216 - 219	High quality AlGaN epilayers grown on sapphire using SiNx interlayers Forghani K, Klein M, Lipski F, Schwaiger S, Hertkorn J, Leute RAR, Scholz F, Feneberg M, Neuschl B, Thonke K, Klein O, Kaiser U, Gutt R, Passow T
220 - 223	On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE Mauder C, Booker ID, Fahle D, Boukiour H, Behmenburg H, Khoshroo LR, Woitok JF, Vescan A, Heuken M, Kalisch H, Jansen RH
224 - 228	Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach Dauelsberg M, Brien D, Pusche R, Schon O, Yakovlev EV, Segal AS, Talalaev RA
229 - 232	High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor Stellmach J, Pristovsek M, Savas O, Schlegel J, Yakovlev EV, Kneissl M
233 - 237	Influence of buffer layers on the microstructure of MOVPE grown a-plane InN Laskar MR, Ganguli T, Kadir A, Hatui N, Rahman AA, Shah AP, Gokhale MR, Bhattacharya A
238 - 241	Material characteristics of InGaN based light emitting diodes grown on porous Si substrates Deng DM, Chiu CH, Kuo HC, Chen P, Lau KM
242 - 245	Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method Wang CH, Ke CC, Chiu CH, Li JC, Kuo HC, Lu TC, Wang SC
246 - 249	Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates Mauder C, Reuters B, Wang KR, Fahle D, Trampert A, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Chou MMC, Heuken M, Kalisch H, Jansen RH
250 - 253	Growth of the active zone in nitride based long wavelength laser structures Rossow U, Jonen H, Brendel M, Drager A, Langer T, Hoffmann L, Bremers H, Hangleiter A
254 - 257	Quaternary AlxInyGa1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission Jetter M, Wachter C, Meyer A, Feneberg M, Thonke K, Michler P
258 - 262	InGaN-based true green laser diodes on novel semi-polar {2 0 (2)over-bar 1} GaN substrates Ueno M, Yoshizumi Y, Enya Y, Kyono T, Adachi M, Takagi S, Tokuyama S, Sumitomo T, Sumiyoshi K, Saga N, Ikegami T, Katayama K, Nakamura T
263 - 266	Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50% Lee J, Tak Y, Kim JY, Hong HG, Chae S, Min B, Jeong H, Yoo J, Kim JR, Park Y
267 - 271	Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice Lundin WV, Nikolaev AE, Sakharov AV, Zavarin EE, Valkovskiy GA, Yagovkina MA, Usov SO, Kryzhanovskaya NV, Sizov VS, Brunkov PN, Zakgeim AL, Cherniakov AE, Cherkashin NA, Hytch MJ, Yakovlev EV, Bazarevskiy DS, Rozhavskaya MM, Tsatsulnikov AF
272 - 277	Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition Liu JP, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH, Shen SC, Yoder PD, Dupuis RD, Wei QYY, Sun KWW, Fischer AM, Ponce FA
278 - 282	Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases Lochner Z, Kim HJ, Choi S, Lee YC, Zhang Y, Shen SC, Ryou JH, Dupuis RD
283 - 287	Blue-violet boron-based Distributed Bragg Reflectors for VCSEL application Abid M, Moudakir T, Djebbour Z, Orsal G, Gautier S, Naciri AE, Migan-Dubois A, Ougazzaden A
288 - 291	Deep structural analysis of novel BGaN material layers grown by MOVPE Gautier S, Patriarche G, Moudakir T, Abid M, Orsal G, Pantzas K, Troadec D, Soltani A, Largeau L, Mauguin O, Ougazzaden A
292 - 296	Dimethylzinc adduct chemistry revisited: MOCVD of vertically aligned ZnO nanowires using the dimethylzinc 1,4-dioxane adduct Kanjolia R, Jones AC, Ashraf S, Bacsa J, Black K, Chalker PR, Beahan P, Hindley S, Odedra R, Williams PA, Heys PN
297 - 300	Effect of growth parameters on MgxZn1-xO films grown by metalorganic chemical vapour deposition Talla K, Dangbegnon JK, Wagener MC, Weber J, Botha JR
301 - 304	Tuning light absorption by band gap engineering in ZnCdO as a function of MOVPE-synthesis conditions and annealing Venkatachalapathy V, Galeckas A, Sellappan R, Chakarov D, Kuznetsov AY