1 - 3 |
Czochralski growth of alpha-BBO crystals under azimuthally anisotropic heating Kokh K, Kokh A |
4 - 7 |
Synthesis and growth of materials for solid state lasers: Nd:YLF and Nd:LLW single crystal fibers Baldochi SL, Silva FR, de Moraes JR, Jakutis J, Wetter NU, Santo AME |
8 - 15 |
Germanium doping for improved silicon substrates and devices Vanhellemont J, Chen J, Lauwaert J, Vrielinck H, Xu W, Yang D, Rafi JM, Ohyama H, Simoen E |
16 - 22 |
Mapping local defects in PbO-based piezoceramics Dimitriu E, Ramer R, Craciun F |
23 - 27 |
Heat transfer process during the crystallization of benzil grown by the Bridgman-Stockbarger method Barvinschi F, Stanculescu A, Stanculescu F |
28 - 31 |
Solid state growth of Na1/2Bi1/2TiO3-BaTiO3 single crystals and their enhanced piezoelectric properties Moon KS, Rout D, Lee HY, Kang SJL |
32 - 38 |
Crystal growth and perfection of large octahedral synthetic diamonds Khokhryakov AF, Palyanov YN, Kupriyanov IN, Borzdov YM, Sokol AG, Hartwig J, Masiello F |
39 - 42 |
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime Hospodkova A, Pangrac J, Vyskocil J, Oswald J, Vetushka A, Caha O, Hazdra P, Kuldova K, Hulicius E |
43 - 46 |
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates Su SJ, Wang W, Cheng BW, Zhang GZ, Hu WX, Xue CL, Zuo YH, Wang QM |
47 - 51 |
Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient Aqili AKS, Ali Z, Maqsood A |
52 - 59 |
Single crystal growth and characterization of copper aluminum indium disulfide chalcopyrites Ho CH |
60 - 63 |
Misorientation-angle dependence of boron incorporation into (001)-oriented chemical-vapor-deposited (CVD) diamond Ogura M, Kato H, Makino T, Okushi H, Yamasaki S |
64 - 69 |
Computer simulation of metastable zone width for unseeded potassium sulfate aqueous solution Kobari M, Kubota N, Hirasawa I |
70 - 78 |
Effects of carboxylic polyelectrolytes on the growth of calcium carbonate Euvrard M, Martinod A, Neville A |
79 - 83 |
Supersaturation rates and schedules: Nucleation kinetics from isothermal metastable zone widths Peters B |
84 - 86 |
Crystal growth and scintillation properties of Cs2LiLuBr6:Ce3+ Kim S, Rooh G, Kim HJ, Kim DS, Kang SJ |
87 - 91 |
The features of morphology and crystalline structure of the monodisperse Lu2O3:Eu3+ submicrospheres prepared by sol-gel method Yermolayeva Y, Tolmachev A, Tkachenko V, Danylenko N, Fedaruk R |
92 - 97 |
Study on micro-crystallization, growth, optical properties and defects of a nonlinear optical crystal: MnHg(SCN)(4) Liu XT, Wang XQ, Sun ZH, Lin XJ, Zhang GH, Xu D |
98 - 103 |
Role of charge particles irradiation on the deposition of AlN films using plasma focus device Khan IA, Rawat RS, Verma R, Macharaga G, Ahmad R |
104 - 109 |
Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications Azeza B, Sfaxi L, M'ghaieth R, Fouzri A, Maaref H |
110 - 114 |
Growth of large crystallites of Co37Ni34Al29 ferromagnetic shape memory alloys under super-high temperature gradient directional solidification Li JZ, Huang B, Li JG |
115 - 118 |
Microstructure evolution of Bi0.4Ca0.6MnO3 epitaxial films with different thickness Ding YH, Cai RS, Du QT, Wang YQ, Chen YZ, Sun JR |
119 - 127 |
Floating-zone growth and characterization of single crystals of cobalt orthosilicate, CO2SiO4 Tang Q, Dieckmann R |
128 - 131 |
Crystal growth and magnetic property of MCo2V2O8 (M=Sr and Ba) Lejay P, Canevet E, Srivastava SK, Grenier B, Klanjsek M, Berthier C |
132 - 134 |
Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method Nojima Y, Ikari M, Letts E, Hashimoto T |
135 - 138 |
Effects of the diameter of rutile (TiO2) single crystals grown using tilting-mirror-type infrared heating image furnace on solid-liquid interface and etch pit density Sarker AR, Watauchi S, Nagao M, Watanabe T, Shindo I, Tanaka I |