1 - 5 |
New two-step growth of microcrystalline silicon thin films without incubation layer Yue HY, Wu AM, Zhang XY, Li TJ |
6 - 9 |
Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy Lu XM, Izumi Y, Koyama M, Nakata Y, Adachi S, Muto S |
10 - 14 |
Growth rate enhancement of InAs nanowire by molecular beam epitaxy Babu JB, Yoh K |
15 - 22 |
Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate Chen XJ, Hwang JS, Perillat-Merceroz G, Landis S, Martin B, Dang DL, Eymery J, Durand C |
23 - 26 |
Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy Novikov SV, Staddon CR, Powell REL, Akimov AV, Luckert F, Edwards PR, Martin RW, Kent AJ, Foxon CT |
27 - 32 |
Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films Frajtag P, Samberg JP, El-Masry NA, Nepal N, Bedair SM |
33 - 37 |
Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD Kim DH, Kwon JH, Kim M, Hong SH |
38 - 40 |
Single-crystalline Sr2MoO4 films as prepared by pulsed laser deposition Radetinac A, Takahashi KS, Alff L, Kawasaki M, Tokura Y |
41 - 44 |
Epitaxial La0.9Ca0.1MnO3 films grown on vicinal cut substrates for the investigation of resistivity and thermoelectric anisotropy Yu L, Wang Y, Zhang PX, Habermeier HU |
45 - 50 |
Hydrothermally grown ZnO buffer layer for the growth of highly (4 wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates Shin SW, Kwon YB, Moholkar AV, Heo GS, Jung IO, Moon JH, Kim JH, Lee JY |
51 - 56 |
A study on the epitaxy nature and properties of 3 wt% Ga-doped epitaxial ZnO thin film on Al2O3 (0001) substrates Shin SW, Lee GH, Moholkar AV, Moon JH, Heo GS, Kim TW, Kim JH, Lee JY |
57 - 62 |
Low temperature II-VI nanowire growth using Au-Sn catalysts Kahen KB, Goldthorpe IA, Minter J |
63 - 68 |
Molecular beam epitaxy of ferromagnetic gamma'-Fe4N thin films on LaAlO3(100), SrTiO3(100) and MgO(100) substrates Ito K, Lee GH, Akinaga H, Suemasu T |
69 - 73 |
Crystal growth and characterization of semiorganic single crystals of L-histidine family for NLO applications Anandan P, Jayavel R |
74 - 77 |
Liquid phase epitaxy (LPE) of GaN on c- and r-faces of AlN substrates Azizi M, Meissner E, Friedrich J, Muller G |
78 - 83 |
Crystal growth and characterization of dibromo bis(triphenylphosphine oxide) cadmium (II) Sreevani K, Thangaraj K, Ramamurthi K, Selvanayagam S, Ravikumar K |
84 - 90 |
Formation of the solidified microstructure in Mg-Sn binary alloy Fu JW, Yang YS |
91 - 94 |
Investigation of high-quality CuInSe2 films with various Cu/In ratios Ko HJ, Lee GH, Kim HJ, Han MS, Jeong CH, Lee JH, Kim HS, Kim JH, Kim KB, Lee SH |
95 - 102 |
Microstructure of platinum films on YSZ prepared by pulsed laser deposition Beck G, Popke H, Luerssen B, Janek J |
103 - 108 |
Flux synthesis and growth mechanism of Na0.5MnO2 whiskers Chu QX, Wang XF, Li BX, Jin H, Cao XJ, Zhao XD, Liu XY |
109 - 113 |
Precise characterization of grain structures, stacking disorders, and lattice disorders of a close-packed colloidal crystal Suzuki Y, Mori A, Fujiwara T, Tamura K |
114 - 116 |
Thermodynamic properties of gallium nitride Peshek TJ, Angus JC, Kash K |
117 - 118 |
Comments on the papers recently published by MM Khandpekar and SP Pati Petrosyan AM, Ghazaryan VV, Fleck M |