1 - 4 |
The impact of germanium doping on the dislocation distribution in directional solidified mc-silicon Bellmann MP, Kaden T, Kressner-Kiel D, Friedl J, Moller HJ, Arnberg L |
5 - 9 |
Control of GaAs nanowire morphology by group III precursor chemistry Salehzadeh O, Watkins SP |
10 - 19 |
Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride Zhang N, Yeckel A, Burger A, Cui YL, Lynn KG, Derby JJ |
20 - 26 |
Growth and structural characterization of intrinsic, acceptor, and donor doped (Mg,Zn)O epilayers via metalorganic vapor phase epitaxy on (1 0 (1)over-bar 0) ZnO substrates Pierce JM, Wen H, Liu K, Kumrr M, Tresback J, Ali YS, Krahnert A, Adekore BT |
27 - 31 |
Oxygen content increasing mechanism in Czochralski (CZ) silicon crystals doped with heavy antimony under a double-typed heat shield Song DW, Lee SH, Mun YH, Kim H |
32 - 35 |
Effects of growth pressure on the properties of p-GaN layers Xian YL, Huang SJ, Zheng ZY, Fan BF, Wu ZS, Jiang H, Wang G |
36 - 40 |
Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire Chu S, Morshed M, Li L, Huang J, Liu JL |
41 - 45 |
Optical properties of InGaN/GaN multiple quantum wells with trimethylindium treatment during growth interruption Feng SW, Tsai CY, Wang HC, Lin HC, Chyi JI |
46 - 51 |
Hierarchical structure of asteriscus and in vitro mineralization on asteriscus substrate Ren DN, Ma YF, Li ZO, Gao YH, Feng QL |
52 - 54 |
Effect of halogen species of acidic mineralizer on solubility of GaN in supercritical ammonia Tomida D, Kuribayashi T, Suzuki K, Kagamitani Y, Ishiguro T, Fukuda T, Yokoyama C |
55 - 59 |
Optical properties, micro-crystallization and etching studies of an organic/inorganic hybrid nonlinear optical crystal: 1-Ethyl-3-methyl imidazolium tribromoplumbate (EMITB) Chen TL, Sun ZH, Niu JP, Zhai QG, Jin CG, Wang SY, Li L, Wang Y, Luo JH, Hong MC |
60 - 67 |
New insights into the structure of Pd-Au nanoparticles as revealed by aberration-corrected STEM Deepak FL, Casillas-Garcia G, Esparza R, Barron H, Jose-Yacaman M |
68 - 75 |
A study of the parameters influencing the microstructure of thick La2Zr2O7 films Cloet V, Lommens P, Huhne R, De Buysser K, Hoste S, Van Driessche I |
76 - 80 |
Solvothermal synthesis and mechanical characterization of single crystalline copper nanorings Zhan YJ, Lu Y, Peng C, Lou J |
81 - 84 |
On the effect of oxygen partial pressure on the chromium distribution coefficient in melt-grown ruby crystals Ganschow S, Klimm D, Bertram R |
85 - 88 |
Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film Cho Y, Choi S, Kil GS, Lee HJ, Yao T, Yang JM, Yoo J, Kwon J, Chang J |
89 - 92 |
Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks Bengoechea-Encabo A, Barbagini F, Fernandez-Garrido S, Grandal J, Ristic J, Sanchez-Garcia MA, Calleja E, Jahn U, Luna E, Trampert A |
93 - 95 |
Realization of non-polar ZnO (1 1 (2)over-bar 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy Zhang TC, Mei ZX, Kuznetsov AY, Du XL |
96 - 100 |
Hydrothermal conversion of FAU zeolite into LEV zeolite in the presence of non-calcined seed crystals Yashiki A, Honda K, Fujimoto A, Shibata S, Ide Y, Sadakane M, Sano T |
101 - 103 |
Some remarks on the undercooling of the Si(111) facet and the "Monte Carlo modeling of silicon crystal growth" by Kirk M. Beatty & Kenneth A. Jackson, J. Crystal Growth 211 (2000) 13 Miller W |
104 - 104 |
Response to: Some remarks on the undercooling of the Si(111) facet and the "Monte Carlo modeling of silicon crystal growth" by Kirk M. Beatty & Kenneth A. Jackson, J. Crystal Growth 211 (2000), 13 by W. Miller Jackson KA |