1 - 5 |
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy Zhao J, Zeng YP, Yang QM, Li YY, Cui LJ, Liu C |
6 - 11 |
Self-catalyzed growth of InP/InSb axial nanowire heterostructures Pozuelo M, Zhou HL, Lin S, Lipman SA, Goorsky MS, Hicks RF, Kodambaka S |
12 - 19 |
Electron backscatter diffraction analysis of a CZT growth tip from a vertical gradient freeze furnace Sundaram SK, Henager CH, Edwards DJ, Schemer-Kohrn AL, Bliss M, Riley BR |
20 - 26 |
Controlling structural quality of ZnO thin film on c-plane sapphire during pulsed laser deposition Loukya B, Sowjanya P, Dileep K, Shipra R, Kanuri S, Panchakarla LS, Datta R |
27 - 32 |
Preparation of bismuth substituted yttrium iron garnet powder and thin film by the metal-organic decomposition method Lee H, Yoon Y, Kim S, Yoo HK, Melikyan H, Danielyan E, Babajanyan A, Ishibashi T, Friedman B, Lee K |
33 - 38 |
High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates Miasojedovas S, Mauder C, Krotkus S, Kadys A, Malinauskas T, Jarasiunas K, Heuken M, Kalisch H, Vescan A |
39 - 43 |
Yb3+:YAG growth with controlled doping distribution using modified horizontal direct crystallization Azrakantsyan M, Albach D, Ananyan N, Gevorgyan V, Chanteloup JC |
44 - 51 |
Sodium sulfate heptahydrate I: The growth of single crystals Derluyn H, Saidov TA, Espinosa-Marzal RM, Pel L, Scherer GW |
52 - 56 |
Nucleation and growth concepts applied to the formation of a stoichiometric compound in a gas phase: The case of MgO smoke Stankic S, Cottura M, Demaille D, Noguera C, Jupille J |
57 - 61 |
Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5 mu m using aberration-corrected scanning transmission electron microscopy Kadkhodazadeh S, Semenova ES, Yvind K, Dunin-Borkowski RE |
62 - 66 |
Deposition temperature effects on tungsten single-crystal layer by chemical vapor transport Lv YW, Yu XD, Tan CW, Ma HL, Zheng JP, Wang FC, Cai HN |
67 - 70 |
Demonstration of p-type 3C-SiC grown on 150 mm Si(100) substrates by atomic-layer epitaxy at 1000 degrees C Wang L, Dimitrijev S, Han JS, Tanner P, Iacopi A, Hold L |
71 - 76 |
Controlled synthesis, characterization, mechanism, and photoluminescence property of nanoerythrocyte-like HoVO4 with high uniform size and morphology He HM, Zhang YJ, Zhu W, Zheng A, Fang ZY |
77 - 81 |
Regular rod-like eutectic spacing selection during directional solidified NiAl-9Mo eutectic in situ composite Zhang JF, Shen J, Shang Z, Feng ZR, Wang LS, Fu HZ |
82 - 85 |
Product change of molecule-magnetic material synthesis induced by magnetic field in hydrothermal system Niu HL, Chen JT, Niu Q, Gao YH, Song JM, Mao CJ, Zhang SY, Chen QW |
86 - 91 |
Flux growth and characterization of Ti- and Ni-doped enstatite single crystals Bloise A, Pingitore V, Miriello D, Apollaro C, Armentano D, Barrese E, Oliva A |