Journal of Crystal Growth

Journal of Crystal Growth, Vol.334, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (33 articles)

1 - 3	Simultaneous growth of several materials using a single experimental setup Moovendaran K, Sundar JK, Natarajan S
4 - 15	Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth Abe T
16 - 36	Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results Abe T, Takahashi T
37 - 39	Structural analysis of site-controlled InAs/InP quantum dots Fain B, Elvira D, Le Gratiet L, Largeau L, Beaudoin G, Troadec D, Abram I, Beveratos A, Robert-Philip I, Patriarche G, Sagnes I
40 - 45	Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy Kadir A, Meissner C, Schwaner T, Pristovsek M, Kneissl M
46 - 50	Improvement of structural and electrical properties of Cu2O films with InN epilayers Pan Y, Wang Z, Peng T, Wu KM, Wu H, Liu C
51 - 56	Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study Mandl B, Dey AW, Stangl J, Cantoro M, Wernersson LE, Bauer G, Samuelson L, Deppert K, Thelander C
57 - 61	Vapor-liquid-solid growth route to AlN nanowires on Au-coated Si substrate by direct nitridation of Al powder Yu LS, Lv YY, Zhang XL, Zhang YY, Zou RY, Zhang F
62 - 66	Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth Zhang L, Shao YL, Hao XP, Wu YZ, Qu S, Chen XF, Xu XG
67 - 71	Numerical analysis of two-dimensional model of the traveling liquidus-zone method Adachi S, Kinoshita K, Takayanagi M, Miyata H
72 - 75	Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates Kim JH, Roh JH, Lee KJ, Moon SJ, Kim JW, Do KM, Moon BM, Koo SM
76 - 79	Low temperature growth of metastable cubic CdSe nanocrystals and their photoluminescence properties Al-Amri AM, Yaghmour SJ, Mahmoud WE
80 - 83	Misoriented grains with a preferential orientation in a-plane oriented GaN layers Tokumoto Y, Lee HJ, Ohno Y, Yao T, Yonenaga I
84 - 89	Long wavelength infrared detection using amorphous InSb and InAs0.3Sb0.7 Zens T, Becla P, Agarwal AM, Kimerling LC, Drehman A
90 - 95	Growth of BiFeO3/SrTiO3 artificial superlattice structure by RF sputtering Chiu SJ, Liu YT, Lee HY, Yu GP, Huang JH
96 - 102	Growth characteristics of topological insulator Bi2Se3 films on different substrates Wang ZY, Li HD, Guo X, Ho WK, Xie MH
103 - 107	Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization Svensson SP, Donetsky D, Wang D, Hier H, Crowne FJ, Belenky G
108 - 112	Crystal growth of Cu3-xZnxMo2O9 by continuous solid-state crystallization method Oka K, Ito T, Eisaki H, Hase M, Hamasaki T, Kuroe H, Sekine T
113 - 117	Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide Goodman K, Protasenko V, Verma J, Kosel T, Xing G, Jena D
118 - 121	Segregation of Mg in Zn1-xMgxO single crystals grown from the melt Schulz D, Bertram R, Klimm D, Schulz T, Thiede E
122 - 125	Preparation and fluorescence properties of La2CaB10O19 crystals doped with Pr3+ ions El-Naggar AM, Alzayed NS, Majchrowski A, Jaroszewicz L, Brik MG, Kuznik W, Kityk IV
126 - 133	A study of highly crystalline novel beryllium oxide film using atomic layer deposition Yum JH, Akyol T, Lei M, Ferrer DA, Hudnall TW, Downer M, Bielawski CW, Bersuker G, Lee JC, Banerjee SK
134 - 137	Solubility measurements by in situ observation of the apex region formed by the (110), (1(1)over-bar0) and (101) faces of tetragonal lysozyme crystals Fujiwara T, Suzuki Y, Tamura K
138 - 145	Anisotropy effects during non-selective epitaxial growth of Si and SiGe materials Pribat C, Dutartre D
146 - 152	Three-dimensional phase-field crystal modeling of fcc and bcc dendritic crystal growth Tang S, Backofen R, Wang JC, Zhou YH, Voigt A, Yu YM
153 - 158	Incorporation of Cr-containing anionic species into potassium dihydrogen phosphate crystal Ding JX, Wang SL, Xu XG, Gu QT, Liu WJ, Sun Y, Liu GX, Zhu SJ
159 - 164	Synthesis, crystal structure, crystal growth and physical properties of N,N-diethyl anilinium picrate Raja RS, Babu GA, Ramasamy P
165 - 169	Growth and characterisation of LixCoO2 single crystals Pinsard-Gaudart L, Ciomaga VC, Dragos O, Guillot R, Dragoe N
170 - 176	Numerical modeling of crystal growth of a nickel-based superalloy with applied direct current Feng XH, Yang YS
177 - 180	Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature Mata R, Hestroffer K, Budagosky J, Cros A, Bougerol C, Renevier H, Daudin B
181 - 188	Self-assembled dendritic nanowires of Au-Pt alloy through electrodeposition from solution under AC fields Cheng Y, Yu G, Tang LL, Zhou YB, Zhang GX
189 - 194	Substrate temperature dependence of the phase transition behavior of AIN layers grown on Si(111) substrate by metalorganic chemical vapor deposition Kim YH, Kim CS, Noh YK, Kim MD, Oh JE
195 - 199	An analysis of non-equilibrium peritectic reaction driven by solute diffusion under a temperature gradient Liu DM, Li XZ, Su YQ, Luo LS, Zhang B, Chen RR, Guo JJ, Fu HZ