Journal of Crystal Growth

Journal of Crystal Growth, Vol.335, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (31 articles)

1 - 3	Self-assembled growth of GaSb type-II nanorods aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs Kawazu T, Akiyama Y, Sakaki H
4 - 9	Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy Ranta S, Hakkarainen T, Tavast M, Lindfors J, Leinonen T, Guina M
10 - 16	Low-temperature growth of In-assisted silicon nanowires Convertino A, Cuscuna M, Nicotra G, Spinella C, Felisari L, Fortunato G, Martelli F
17 - 24	Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process Claudel A, Blanquet E, Chaussende D, Boichot R, Doisneau B, Berthome G, Crisci A, Mank H, Moisson C, Pique D, Pons M
25 - 27	Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays Wang J, Yuan JY, van Otten FWM, Notzel R
28 - 30	Towards vertical coupling of CdTe/ZnTe quantum dots formed by a high temperature tellurium induced process Wojnar P, Bougerol C, Bellet-Amalric E, Besombes L, Mariette H, Boukari H
31 - 36	Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth Pinault-Thaury MA, Tillocher T, Kobor D, Habka N, Jomard F, Chevallier J, Barjon J
37 - 41	3D epitaxial growth through holes for the fabrication of thin-film solar cells Brinkmann N, Pocza D, Mitchell EJ, Reber S
42 - 50	Numerical investigation of pulsed chemical vapor deposition of aluminum nitride to reduce particle formation Endres D, Mazumder S
51 - 57	The influence of N-2/H-2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition Alevli M, Ozgit C, Donmez I, Biyikli N
58 - 61	Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes Nemcsics A, Heyn C, Toth L, Dobos L, Stemmann A, Hansen W
62 - 65	Defects in Ge epitaxy in trench patterned SiO2 on Si and Ge substrates Leonhardt D, Ghosh S, Han SM
66 - 69	Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell Tan KH, Wicaksono S, Loke WK, Li D, Yoon SF, Fitzgerald EA, Ringel SA, Harris JS
70 - 74	Synthesis, crystal structure and DFT calculation of an energetic perchlorate amine salt Ma P, Zhang L, Zhu SG, Chen HH
75 - 83	Investigation on growth and characterization of imidazolium picrate: An organic salt Anandhi S, Shyju TS, Srinivasan TP, Gopalakrishnan R
84 - 89	Hybrid organic-inorganic crystals based on ammonium dihydrogen phosphate and ammonium salicylate Voronov AP, Salo VI, Puzikov VM, Babenko GN, Roshal AD, Tkachenko VF
90 - 93	Single crystal growth and characterization of lanthanum-neodymium oxalate octahydrate Want B
94 - 99	Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system Seki K, Alexander, Kozawa S, Ujihara T, Chaudouet P, Chaussende D, Takeda Y
100 - 105	Oligo(L-lysine)-induced titanium dioxide: Effects of consecutive lysine on precipitation Ahn S, Park S, Lee SY
106 - 109	Effects of some polymeric additives on the cocrystallization of caffeine Chung J, Kim IW
110 - 114	Pharmaceutical cocrystals: a comparison of sulfamerazine with sulfamethazine Lu J, Li YP, Wang J, Li Z, Rohani S, Ching CB
115 - 120	Growth and laser characterization of a mixed laser crystal Nd: Lu0.141Y0.855VO4 Zhao B, Zhuang NF, Li T, Guo FY, Zhuo Z, Ye J, Chen JZ
121 - 126	In situ control of the distributions of alloying elements in alloys in liquid state using high magnetic field gradients Liu T, Wang Q, Hirota N, Liu Y, Chen SH, He JC
127 - 132	Vapor phase growth of free-standing palladium nanorods Ma DL, Chen HL
133 - 137	Large LBO crystal growth at 2 kg-level Hu ZG, Zhao Y, Yue YC, Yu XS
138 - 147	An analysis of and a model for spiral growth of Czochralski-grown oxide crystals with high melting point Schwabe D, Uecker R, Bernhagen M, Galazka Z
148 - 159	Analysis of limits for sapphire growth in a micro-pulling-down system Samanta G, Yeckel A, Daggolu P, Fang HS, Bourret-Courchesne ED, Derby JJ
160 - 164	Synthesis of centimeter-scale ultra-long SiC nanowires by simple catalyst-free chemical vapor deposition Wei J, Li KZ, Chen J, Yuan HD
165 - 171	Synthesis of nanocrystalline La2O3-Y2O3-ZrO2 solid solutions by hydrothermal method: A crystal growth and structural study Wang CJ, Wang Y, Cheng YL, Zhu L, Zou BL, Zhao Y, Huang WZ, Fan XZ, Khan ZS, Cao XQ
172 - 180	Application of laser backscattering for monitoring of palm oil crystallisation from melt Hishamuddin E, Stapley AGF, Nagy ZK
181 - 182	Area selective epitaxy of InAs on GaAs(001) and GaAs(111)A by migration enhanced epitaxy (vol 323, pg 9, 2011) Zander M, Nishinaga J, Iga K, Horikoshi Y