| 1 - 4 |
Growth, characterization and the fourth harmonic generation at 266 nm of K2Al2B2O7 crystals without UV absorptions and Na impurity
Wang YG, Wang LR, Gao X, Wang GL, Li RK, Chen CT |
| 5 - 9 |
MOCVD-growth of thin zinc oxide films from zinc acetylacetonate and air
Pflitsch C, Nebatti A, Brors G, Atakan B |
| 10 - 14 |
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
Li ZW, Wei HY, Xu XQ, Zhao GJ, Liu XL, Yang SY, Zhu QS, Wang ZG |
| 15 - 19 |
Epitaxial growth of orthorhombic SnO2 films on various YSZ substrates by plasma enhanced atomic layer deposition
Kim S, Kim DH, Hong SH |
| 20 - 24 |
Effect of Ge doping on the kinetics of iron-boron pair association and dissociation in photovoltaic silicon
Zhu XD, Yu XG, Li XQ, Wang P, Yang DR |
| 25 - 30 |
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
Zhu JJ, Fan YM, Zhang H, Lu GJ, Wang H, Zhao DG, Jiang DS, Liu ZS, Zhang SM, Chen GF, Zhang BS, Yang H |
| 31 - 39 |
Diffusion coefficients of two mobile ions in three AB(3)In(7)VI(12) single crystals (AB = Cu and Ag VI = Se or Te). Proposition of an equivalent electrical circuit
Diaz R |
| 40 - 46 |
A facile hydrothermal route for the synthesis of alpha-FeOOH with controlled morphology
Raditoiu V, Diamandescu L, Corobea MC, Raditoiu A, Popescu-Pogrion N, Nicolae CA |
| 47 - 52 |
Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers
Lin YS, Lin KH, Tite T, Chuang CY, Chang YM, Yeh JA |
| 53 - 59 |
Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers
Meduna M, Caha O, Bursik J |
| 60 - 64 |
Hydrothermal growth and optical properties of RbBe2BO3F2 crystals
Liu LJ, Zhou HT, He XL, Zhang X, Wang XY, Lu FH, Zhang CL, Zhou WN, Chen CT |
| 65 - 70 |
Hydrothermal growth of cross-linked hyperbranched copper dendrites using copper oxalate complex
Truong QD, Kakihana M |
| 71 - 74 |
Numerical analysis of the velocity of SiC growth by the top seeding method
Inui F, Gao B, Nakano S, Kakimoto K |
| 75 - 79 |
Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
Baba M, Toh K, Toko K, Saito N, Yoshizawa N, Jiptner K, Sekiguchi T, Hara KO, Usami N, Suemasu T |
| 80 - 84 |
Improving the purity of GaN grown by the ammonothermal method with in-autoclave gas-phase acidic mineralizer synthesis
Tomida D, Chichibu SF, Kagamitani Y, Bao Q, Hazu K, Simura R, Sugiyama K, Yokoyama C, Ishiguro T, Fukuda T |
| 85 - 90 |
Thermal growth and luminescence of wurtzite ZnS nanowires and nanoribbons
Sotillo B, Fernandez P, Piqueras J |
| 91 - 96 |
Cubic SiC formation on the C-face of 6H-SiC (0001) substrates
Vasiliauskas R, Juillaguet S, Syvajarvi M, Yakimova R |
| 97 - 105 |
Effective convection coefficient for porous interface and solute segregation
Ostrogorsky AG |
