1 - 5 |
Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition Chen GC, Li B, Yan ZQ, Liu J, Lu FX, Ye H |
6 - 11 |
Optimization study of metal-organic chemical vapor deposition of ZnO on sapphire substrate Zhu GY, Gu SL, Zhu SM, Huang SM, Gu R, Ye JD, Zheng YD |
12 - 18 |
Crystal orientation of beta-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate Nakagomi S, Kokubun Y |
19 - 23 |
NH3-free growth of GaN nanostructure on n-Si (111) substrate using a conventional thermal evaporation technique Saron KMA, Hashim MR, Farrukh MA |
24 - 26 |
Enhanced ferroelectric polarization in tetragonally strained NaNbO3 thin film on single crystal Rh substrate Maeng WJ, Jung I, Son JY |
27 - 35 |
Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC Portail M, Michon A, Vezian S, Lefebvre D, Chenot S, Roudon E, Zielinski M, Chassagne T, Tiberj A, Camassel J, Cordier Y |
36 - 42 |
Phase-field modeling of microelastically controlled eutectic lamellar growth in a Ti-Fe system Ebrahimi Z, Rezende JL, Kundin J |
43 - 49 |
Doping induced lattice misfit in 4H-SiC homoepitaxy Kallinger B, Berwian P, Friedrich J, Muller G, Weber AD, Volz E, Trachta G, Spiecker E, Thomas B |
50 - 54 |
Si0.5Ge0.5 bulk single crystals with uniform composition Kinoshita K, Miyata H, Tanaka R, Ueda T, Arai Y, Yoda S |
55 - 60 |
Synthesis of selenium doted pyrite single crystals prepared by chemical vapor transport Diener A, Koppe R |
61 - 67 |
Influence of carbon coated pBN crucible on crystal growth of Cd0.9Zn0.1Te for radiation detector applications Crocco J, Carcelen V, Methven B, Gallardo I, Bensalah H, Zheng Q, Rivas I, Moreno F, Vela O, Dieguez E |
68 - 74 |
Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique Shi YG, Yang JF, Liu HL, Dai PY, Liu BB, Jin ZH, Qiao GJ, Li HL |
75 - 82 |
Growth of one-dimensional single-crystalline hydroxyapatite nanorods Ren FZ, Ding YH, Ge X, Lu X, Wang KF, Leng Y |
83 - 88 |
Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst Murata J, Sadakuni S, Okamoto T, Hattori AN, Yagi K, Sano Y, Arima K, Yamauchi K |