Journal of Crystal Growth

Journal of Crystal Growth, Vol.350, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (21 articles)

1 - 1	The 7th International Workshop on Bulk Nitride Semiconductors Koyasan, Wakayama, Japan 15-20 March 2011 Preface Freitas JA, Sitar Z, Kumagai Y, Meissener E
2 - 4	Development of a novel in situ monitoring technology for ammonothermal reactors Alt NSA, Meissner E, Schluecker E
5 - 10	Multi feed seed (MFS) high pressure crystallization of 1-2 in GaN Bockowski M, Grzegory I, Lucznik B, Sochacki T, Nowak G, Sadovyi B, Strak P, Kamler G, Litwin-Staszewska E, Porowski S
11 - 16	Properties of nitrogen-doped titanium oxides David DGF, Guerreiro J, da Silva MVS, Meira MVC, Bargiela P, de Almeida JS, Freitas JA, da Silva AF
17 - 20	Free exciton absorption in Ga1-xZnxN1-xOx alloys Dou MF, Baldissera G, Persson C
21 - 26	Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN Feigelson BN, Anderson TJ, Abraham M, Freitas JA, Hite JK, Eddy CR, Kub FJ
27 - 32	Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy Freitas JA, Mastro MA, Glaser ER, Garces NY, Lee SK, Chung JH, Oh DK, Shim KB
33 - 37	Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy Freitas JA, Culbertson JC, Mastro MA, Kumagai Y, Koukitu A
38 - 43	Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates Fujikura H, Oshima Y, Megro T, Saito T
44 - 49	Growth and strain characterization of high quality GaN crystal by HVPE Geng HY, Sunakawa H, Sumi N, Yamamoto K, Yamaguchi AA, Usui A
50 - 55	Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed-seed configuration Grzegory I, Bockowski M, Lucznik B, Weyher J, Litwin-Staszewska E, Konczewicz L, Sadovyi B, Nowakowski P, Porowski S
56 - 59	Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3 Imade M, Bu Y, Sumi T, Kitamoto A, Yoshimura M, Sasaki T, Imsemura M, Mori Y
60 - 65	Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H-2 and N-2 Kumagai Y, Igi T, Ishizuki M, Togashi R, Murakami H, Takada K, Koukitu A
66 - 68	Development of GaN wafers for solid-state lighting via the ammonothermal method Letts E, Hashimoto T, Ikari M, Nojima Y
69 - 71	AIN homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE Nomura T, Okumura K, Miyake H, Hiramatsu K, Eryu O, Yamada Y
72 - 74	Growth of bulk GaN crystal by Na flux method under various conditions Mori Y, Imade M, Murakami K, Takazawa H, Imabayashi H, Todoroki Y, Kitamoto K, Maruyama M, Yoshimura M, Kitaoka Y, Sasaki T
75 - 79	Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates Nagashima T, Hakomori A, Shimoda T, Hironaka K, Kubota Y, Kinoshita T, Yamamoto R, Takada K, Kumagai Y, Koukitu A, Yanagi H
80 - 84	Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy Novikov SV, Staddon CR, Luckert F, Edwards PR, Martin RW, Kent AJ, Foxon CT
85 - 88	Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy Park HJ, Kim HY, Bae JY, Shin S, Kim J
89 - 92	Growth of GaN boules via vertical HVPE Richter E, Grunder M, Netzel C, Weyers M, Trankle G
93 - 97	On the formation of vacancy defects in III-nitride semiconductors Tuomisto F, Maki JM, Rauch C, Makkonen I