화학공학소재연구정보센터

Journal of Crystal Growth

Journal of Crystal Growth, Vol.212, No.1-2 Entire volume, number list
ISSN: 0022-0248 (Print) 

In this Issue (52 articles)

1 - 10 Coalescence in microchannel epitaxy of InP
Yan Z, Hamaoka Y, Naritsuka S, Nishinaga T
11 - 20 In situ monitoring and control of multicomponent gas-phase streams for growth of GaN via MOCVD
Johnson MC, Poochinda K, Ricker NL, Rogers JW, Pearsall TP
21 - 28 Formation of interfaces in InGaP/GaAs/InGaP quantum wells
Kudela R, Kucera M, Olejnikova B, Elias P, Hasenohrl S, Novak J
29 - 34 Investigations on the undersaturated liquid phase epitaxial growth of AlxGa1-xAs
Jeganathan K, Fareed RSQ, Baskar K, Ramasamy P, Kumar J
35 - 38 Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots
Wang HL, Yang FH, Feng SL
39 - 48 Bulk GaN single-crystals growth
Kamler G, Zachara J, Podsiadlo S, Adamowicz L, Gebicki W
49 - 55 Characterization of Ga0.52In0.48P/GaAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy
Yoon SF, Lui PY, Zheng HQ
56 - 60 Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition
Jin SR, Ramsteiner M, Grahn HT, Ploog KH, Zhu ZQ, Shen DX, Li AZ, Metev P, Guido LJ
61 - 66 Effects of PH3/H-2 purge on the As concentration profile of InAsxP1-x/InP single quantum wells
Moon Y, Yoon E
67 - 73 Growth of InAs nanocrystals on GaAs(100) by droplet epitaxy
Lee JM, Kim DH, Hong H, Woo JC, Park SJ
74 - 82 Effect of nitrogen species and energy on the crystallinity and luminescent properties of GaN films grown by the reactive neutral beam-assisted evaporation process
Kim KS, Shim HS, Kim SH
83 - 91 Growth and characterization of hexagonal (Zn,Mg)(S,Se) bulk substrates
Lin WC, Tamargo MC, Steiner J, Wei HY, Sarney W, Salamanca-Riba L, Fitzpatrick BJ
92 - 96 Effect of seed annealing on ZnSe single-crystals grown by vertical sublimation method
Kato H, Kikuma I
97 - 102 Growth and characterization of ZnSe on Si by atomic layer epitaxy
Yokoyama M, Chen NT, Ueng HY
103 - 108 Incorporation mechanism of dopant phosphorus in the Si growth using Si2H6 and PH3
Hirose F
109 - 114 Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films
You LP, Heng CL, Ma SY, Ma ZC, Zong WH, Wu ZL, Win GG
115 - 118 Bulk-quantity Si nanowires synthesized by SiO sublimation
Zhang YF, Tang YH, Lam C, Wang N, Lee CS, Bello I, Lee ST
119 - 127 Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon
Jin S, Bender H, Stalmans L, Bilyalov R, Poortmans J, Loo R, Caymax M
128 - 137 Monte Carlo growth simulation for AlxGa1-xAs heteroepitaxy
Grosse F, Zimmermann R
138 - 141 The effect of B2O3 addition on La2-xSrxCuO4 single-crystal growth
Maljuk A, Watauchi S, Tanaka I, Kojima H
142 - 147 Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5
Sekar C, Watanabe T, Matsuda A
148 - 154 Epitaxial CaGe2 films on germanium
Vogg G, Brandt MS, Stutzmann M, Genchev I, Bergmaier A, Gorgens L, Dollinger G
155 - 160 Surface characterization of NdF3 layers on Si(111) substrates grown by molecular beam epitaxy
Ko JM, Inaba K, Durbin SD, Fukuda T
161 - 166 Growth and investigation of thermoelectric properties of Bi-Sb alloy single crystals
Zemskov VS, Belaya AD, Beluy US, Kozhemyakin GN
167 - 172 Growth of single crystals of ZrW2O8
Kowach GR
173 - 177 Laser molecular beam epitaxy of BaTiO3 and SrTiO3 ultra thin films
Lu HB, Wang N, Chen WZ, Chen F, Zhao T, Peng HY, Lee ST, Yang GZ
178 - 190 MOCVD growth and structure of Nb- and V-doped TiO2 films on sapphire
Gao Y, Thevuthasan S, McCready DE, Engelhard M
191 - 203 Striations in YIG fibers grown by the laser-heated pedestal method
Lim HJ, DeMattei RC, Feigelson RS, Rochford K
204 - 210 Growth of Tm : Ho : YVO4 laser single crystals by the floating zone method
Yan XL, Wu X, Zhou JF, Zhang ZG, Wang XM, Fu PM, Jiang YD, Hu J, Qiu JL
211 - 216 The influence of heavy iron-doping on LiNbO3 fibers and their growth
Lai YJ, Chen JC
217 - 221 Growth of NdxGd1-xCa4O(BO3)(3) along phase-matching direction and passive mode-locking self-frequency-doubling characteristics
Zhang SJ, Cheng ZX, Han JR, Sun LK, Zhang XY, Zhao SZ, Wang QP, Chen HC
222 - 226 Electrophoretic deposition of ligand-stabilized silver nanoparticles synthesized by the process of photochemical reduction
Li HX, Lin MZ, Hou JG
227 - 232 Studies on organic indole-3-aldehyde single crystals
Hameed ASH, Ravi G, Dhanasekaran R, Ramasamy P
233 - 238 Solubility and dissolution kinetics of calcium oxalate renal calculi in solutions, containing DL-lysine: in vitro experiments
Atanassova S, Neykov K, Gutzow I
239 - 245 Crystallization behavior of taltirelin polymorphs in a mixture of water and methanol
Maruyama S, Ooshima H
246 - 254 Influence of organic solvents on the habit of NMBA (4-nitro-4'-methyl benzylidene aniline) crystals
Srinivasan K, Sankaranarayanan K, Thangavelu S, Ramasamy P
255 - 260 Industrial growth, morphology and some properties of Bi-colored amethyst-citrine quartz (ametrine)
Balitsky VS, Machina IB, Mar'in AA, Shigley JE, Rossman GR, Lu T
261 - 269 Abnormal dissolution of octacalcium phosphate crystals at constant undersaturation
Tang RK, Nancollas GH
270 - 282 Electron microscopic observations on protein crystallization: adsorption layers, aggregates and crystal defects
Braun N, Tack J, Fischer M, Bacher A, Bachmann L, Weinkauf S
283 - 290 Macrosegregation in Bridgman growth of Terfenol-D and effects of annealing
Park WJ, Kim JC, Ye BJ, Lee ZH
291 - 298 Effect of annealing on the microstructure of Ni80Fe20/Cu multilayers
Xu M, Luo GM, Chai CL, Mai ZH, Lai WY, Wu ZH, Wang DW
299 - 310 On turbulent flows in cold-wall CVD reactors
Van Santen H, Kleijn CR, Van den Akker HEA
311 - 323 Symmetry breaking in a stagnation-flow CVD reactor
Van Santen H, Kleijn CR, Van den Akker HEA
324 - 333 Monotectic composite growth with fluid flow
Stocker C, Ratke L
334 - 339 Effects of temperature asymmetry and tilting in the vertical Bridgman growth of semi-transparent crystals
Vizman D, Nicoara I, Muller G
340 - 351 Influence of ampoule rotation on three-dimensional convection and segregation in Bridgman crystal growth under imperfect growth conditions
Lan CW, Liang MC, Chian JH
352 - 355 Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
Zhuang QD, Li JM, Zeng YP, Yoon SF, Zheng HQ, Kong MY, Lin LY
356 - 359 Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
Jiang WH, Xu HZ, Xu B, Ye XL, Wu J, Ding D, Liang JB, Wang ZG
360 - 363 The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate
Sun ZZ, Wu J, Lin F, Liu FQ, Chen YH, Ye XL, Jiang WH, Li YF, Xu B, Wang ZG
364 - 367 Crystal growth of Ba(B1-xAlx)(2)O-4 using a new Fz furnace with double ring-shaped halogen lamp heater
Kimura H, Jia X, Shoji K, Sakai R, Katsumata T
368 - 371 Flux growth of the new nonlinear optical crystal: K2Al2B2O7
Hu ZG, Higashiyama T, Yoshimura M, Mori Y, Sasaki T
372 - 372 Surface topography of rapidly grown KH2PO4 crystals with additives: ex situ investigation by atomic force microscopy (vol 203, pg 425, 1999)
Yang SF, Su GB, Tang J, Mao BW, Wu JM, Li ZD