1 - 10 |
Coalescence in microchannel epitaxy of InP Yan Z, Hamaoka Y, Naritsuka S, Nishinaga T |
11 - 20 |
In situ monitoring and control of multicomponent gas-phase streams for growth of GaN via MOCVD Johnson MC, Poochinda K, Ricker NL, Rogers JW, Pearsall TP |
21 - 28 |
Formation of interfaces in InGaP/GaAs/InGaP quantum wells Kudela R, Kucera M, Olejnikova B, Elias P, Hasenohrl S, Novak J |
29 - 34 |
Investigations on the undersaturated liquid phase epitaxial growth of AlxGa1-xAs Jeganathan K, Fareed RSQ, Baskar K, Ramasamy P, Kumar J |
35 - 38 |
Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots Wang HL, Yang FH, Feng SL |
39 - 48 |
Bulk GaN single-crystals growth Kamler G, Zachara J, Podsiadlo S, Adamowicz L, Gebicki W |
49 - 55 |
Characterization of Ga0.52In0.48P/GaAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy Yoon SF, Lui PY, Zheng HQ |
56 - 60 |
Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition Jin SR, Ramsteiner M, Grahn HT, Ploog KH, Zhu ZQ, Shen DX, Li AZ, Metev P, Guido LJ |
61 - 66 |
Effects of PH3/H-2 purge on the As concentration profile of InAsxP1-x/InP single quantum wells Moon Y, Yoon E |
67 - 73 |
Growth of InAs nanocrystals on GaAs(100) by droplet epitaxy Lee JM, Kim DH, Hong H, Woo JC, Park SJ |
74 - 82 |
Effect of nitrogen species and energy on the crystallinity and luminescent properties of GaN films grown by the reactive neutral beam-assisted evaporation process Kim KS, Shim HS, Kim SH |
83 - 91 |
Growth and characterization of hexagonal (Zn,Mg)(S,Se) bulk substrates Lin WC, Tamargo MC, Steiner J, Wei HY, Sarney W, Salamanca-Riba L, Fitzpatrick BJ |
92 - 96 |
Effect of seed annealing on ZnSe single-crystals grown by vertical sublimation method Kato H, Kikuma I |
97 - 102 |
Growth and characterization of ZnSe on Si by atomic layer epitaxy Yokoyama M, Chen NT, Ueng HY |
103 - 108 |
Incorporation mechanism of dopant phosphorus in the Si growth using Si2H6 and PH3 Hirose F |
109 - 114 |
Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films You LP, Heng CL, Ma SY, Ma ZC, Zong WH, Wu ZL, Win GG |
115 - 118 |
Bulk-quantity Si nanowires synthesized by SiO sublimation Zhang YF, Tang YH, Lam C, Wang N, Lee CS, Bello I, Lee ST |
119 - 127 |
Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon Jin S, Bender H, Stalmans L, Bilyalov R, Poortmans J, Loo R, Caymax M |
128 - 137 |
Monte Carlo growth simulation for AlxGa1-xAs heteroepitaxy Grosse F, Zimmermann R |
138 - 141 |
The effect of B2O3 addition on La2-xSrxCuO4 single-crystal growth Maljuk A, Watauchi S, Tanaka I, Kojima H |
142 - 147 |
Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5 Sekar C, Watanabe T, Matsuda A |
148 - 154 |
Epitaxial CaGe2 films on germanium Vogg G, Brandt MS, Stutzmann M, Genchev I, Bergmaier A, Gorgens L, Dollinger G |
155 - 160 |
Surface characterization of NdF3 layers on Si(111) substrates grown by molecular beam epitaxy Ko JM, Inaba K, Durbin SD, Fukuda T |
161 - 166 |
Growth and investigation of thermoelectric properties of Bi-Sb alloy single crystals Zemskov VS, Belaya AD, Beluy US, Kozhemyakin GN |
167 - 172 |
Growth of single crystals of ZrW2O8 Kowach GR |
173 - 177 |
Laser molecular beam epitaxy of BaTiO3 and SrTiO3 ultra thin films Lu HB, Wang N, Chen WZ, Chen F, Zhao T, Peng HY, Lee ST, Yang GZ |
178 - 190 |
MOCVD growth and structure of Nb- and V-doped TiO2 films on sapphire Gao Y, Thevuthasan S, McCready DE, Engelhard M |
191 - 203 |
Striations in YIG fibers grown by the laser-heated pedestal method Lim HJ, DeMattei RC, Feigelson RS, Rochford K |
204 - 210 |
Growth of Tm : Ho : YVO4 laser single crystals by the floating zone method Yan XL, Wu X, Zhou JF, Zhang ZG, Wang XM, Fu PM, Jiang YD, Hu J, Qiu JL |
211 - 216 |
The influence of heavy iron-doping on LiNbO3 fibers and their growth Lai YJ, Chen JC |
217 - 221 |
Growth of NdxGd1-xCa4O(BO3)(3) along phase-matching direction and passive mode-locking self-frequency-doubling characteristics Zhang SJ, Cheng ZX, Han JR, Sun LK, Zhang XY, Zhao SZ, Wang QP, Chen HC |
222 - 226 |
Electrophoretic deposition of ligand-stabilized silver nanoparticles synthesized by the process of photochemical reduction Li HX, Lin MZ, Hou JG |
227 - 232 |
Studies on organic indole-3-aldehyde single crystals Hameed ASH, Ravi G, Dhanasekaran R, Ramasamy P |
233 - 238 |
Solubility and dissolution kinetics of calcium oxalate renal calculi in solutions, containing DL-lysine: in vitro experiments Atanassova S, Neykov K, Gutzow I |
239 - 245 |
Crystallization behavior of taltirelin polymorphs in a mixture of water and methanol Maruyama S, Ooshima H |
246 - 254 |
Influence of organic solvents on the habit of NMBA (4-nitro-4'-methyl benzylidene aniline) crystals Srinivasan K, Sankaranarayanan K, Thangavelu S, Ramasamy P |
255 - 260 |
Industrial growth, morphology and some properties of Bi-colored amethyst-citrine quartz (ametrine) Balitsky VS, Machina IB, Mar'in AA, Shigley JE, Rossman GR, Lu T |
261 - 269 |
Abnormal dissolution of octacalcium phosphate crystals at constant undersaturation Tang RK, Nancollas GH |
270 - 282 |
Electron microscopic observations on protein crystallization: adsorption layers, aggregates and crystal defects Braun N, Tack J, Fischer M, Bacher A, Bachmann L, Weinkauf S |
283 - 290 |
Macrosegregation in Bridgman growth of Terfenol-D and effects of annealing Park WJ, Kim JC, Ye BJ, Lee ZH |
291 - 298 |
Effect of annealing on the microstructure of Ni80Fe20/Cu multilayers Xu M, Luo GM, Chai CL, Mai ZH, Lai WY, Wu ZH, Wang DW |
299 - 310 |
On turbulent flows in cold-wall CVD reactors Van Santen H, Kleijn CR, Van den Akker HEA |
311 - 323 |
Symmetry breaking in a stagnation-flow CVD reactor Van Santen H, Kleijn CR, Van den Akker HEA |
324 - 333 |
Monotectic composite growth with fluid flow Stocker C, Ratke L |
334 - 339 |
Effects of temperature asymmetry and tilting in the vertical Bridgman growth of semi-transparent crystals Vizman D, Nicoara I, Muller G |
340 - 351 |
Influence of ampoule rotation on three-dimensional convection and segregation in Bridgman crystal growth under imperfect growth conditions Lan CW, Liang MC, Chian JH |
352 - 355 |
Effect of rapid thermal annealing on InGaAs/GaAs quantum wells Zhuang QD, Li JM, Zeng YP, Yoon SF, Zheng HQ, Kong MY, Lin LY |
356 - 359 |
Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy Jiang WH, Xu HZ, Xu B, Ye XL, Wu J, Ding D, Liang JB, Wang ZG |
360 - 363 |
The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate Sun ZZ, Wu J, Lin F, Liu FQ, Chen YH, Ye XL, Jiang WH, Li YF, Xu B, Wang ZG |
364 - 367 |
Crystal growth of Ba(B1-xAlx)(2)O-4 using a new Fz furnace with double ring-shaped halogen lamp heater Kimura H, Jia X, Shoji K, Sakai R, Katsumata T |
368 - 371 |
Flux growth of the new nonlinear optical crystal: K2Al2B2O7 Hu ZG, Higashiyama T, Yoshimura M, Mori Y, Sasaki T |
372 - 372 |
Surface topography of rapidly grown KH2PO4 crystals with additives: ex situ investigation by atomic force microscopy (vol 203, pg 425, 1999) Yang SF, Su GB, Tang J, Mao BW, Wu JM, Li ZD |