Journal of Crystal Growth

Journal of Crystal Growth, Vol.219, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (20 articles)

1 - 9	Residual stresses in cubic and hexagonal GaN grown on sapphire using ion beam-assisted deposition Keckes J, Gerlach JW, Rauschenbach B
10 - 16	Low-temperature metalorganic vapor-phase epitaxial growth of InGaAs layers on InP substrates Oe K
17 - 21	Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate Li YF, Liu FQ, Xu B, Ye XL, Ding D, Sun ZZ, Jiang WH, Liu HY, Zhang YC, Wang ZG
22 - 31	Numerical analysis of Cd1-xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique Liu XH, Jie WQ, Zhou YH
32 - 39	Growth of Pb1-xSnxTe (x approximate to 0.12) epitaxial layers by temperature difference under controlled vapor pressure liquid-phase epitaxy Nugraha, Tamura W, Itoh O, Suto K, Nishizawa J
40 - 55	Chemical inhomogeneities of flux grown rare-earth aluminate RAlO3 (R = La, Gd, Tb, Dy, Ho and Er) crystals Razdan AK, Bamzai KK, Hangloo V, Kotru PN, Wanklyn BM
56 - 60	Study of single-crystal growth of Tm3+: CaYAlO4 by the floating-zone method Wang WY, Yan XL, Wu X, Zhang ZG, Hu BQ, Zhou JF
61 - 66	Crystal growth of Ca1.29Bi0.14VO4 Kim HK, Kim MS, Park SM, Sleight AW
67 - 74	Growth mechanism of sucrose in pure solutions and in the presence of glucose and fructose Wang BG, Krafczyk S, Follner H
75 - 82	Determination of growth and dissolution mass rate of boric acid crystals by a simple computer program Sahin O, Ozdemir M, Kendirci H, Bulutcu AN
83 - 90	Schlieren technique to in situ monitor rapidly-growing KDP crystal surface Bredikhin VI, Galushkina GL, Kuznetsov SP
91 - 97	Effect of cationic surfactant on the transformation of octacalcium phosphate Horvath L, Smit I, Sikiric M, Filipovic-Vincekovic N
98 - 101	Dissolution studies of Zn-containing carbonated hydroxyapatites Mayer I, Featherstone JDB
102 - 114	The effect of ordering of internal water in thaumatin and lysozyme crystals as revealed by Raman method Kudryavtsev AB, Christopher G, Smith CD, Mirov SB, Rosenblum WM, DeLucas LJ
115 - 122	Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate Hayashi T, Ueno K, Saiki K, Koma A
123 - 143	Three-dimensional simulation of flow and thermal field in a Czochralski melt using a block-structured finite-volume method Basu B, Enger S, Breuer M, Durst F
144 - 164	Numerical study of three-dimensional mixed convection due to buoyancy and centrifugal force in an oxide melt for Czochralski growth Enger S, Basu B, Breuer M, Durst F
165 - 175	A Monte Carlo study of dislocation growth and etching of crystals Cuppen HM, van Veenendaal E, van Suchtelen J, van Enckevort WJP, Vlieg E
176 - 179	Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor Liu ZJ, Atakan B, Kohse-Hoinghaus K
180 - 183	Self-assembled InAs quantum wires on InP(001) Wu J, Zeng YP, Sun ZZ, Lin F, Xu B, Wang ZG