Journal of Crystal Growth

Journal of Crystal Growth, Vol.242, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (36 articles)

1 - 4	Growth and properties of RE : Zn : LiNbO3 crystals Zhang Y, Xu YH, Li MH, Zhao YQ
5 - 14	Thermodynamic analysis of anion exchange during heteroepitaxy Wang YQ, Wang ZL, Brown T, Brown A, May G
15 - 19	MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuation Zhou W, Chua SJ, Dong JR, Teng JH
20 - 28	Effect of Si doping on the growth and microstructure of GaN grown on Si(111) using SiC as a buffer layer Wang D, Yoshida S, Ichikawa M
29 - 34	Optical properties of GaAs/GaNxAs1-x quantum well structures grown by migration-enhanced epitaxy Hong YG, Tu CW
35 - 40	Effects of post-growth thermal annealing on the indium aggregated structures in InGaN/GaN quantum wells Lin YS, Ma KJ, Yang CC, Weirich TE
41 - 44	Study of CdTe and ZnTe single-crystal growth from vapour phase and investigation of the grown crystals Ilchuk G, Ukrainetz V, Danylov A, Masluk V, Parlag J, Yaskov O
45 - 54	Wetting angles and surface tension of Ge1-xSix melts on different substrate materials Croll A, Salk N, Szofran FR, Cobb SD, Volz MP
55 - 69	Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN Koleske DD, Wickenden AE, Henry RL, Twigg ME
70 - 76	GaN single crystal growth using high-purity Na as a flux Aoki M, Yamane H, Shimada M, Sarayama S, DiSalvo FJ
77 - 81	Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE Honda Y, Kuroiwa Y, Yamaguchi M, Sawaki N
82 - 86	Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE Honda Y, Kameshiro N, Yamaguchi M, Sawaki N
87 - 94	Molecular beam epitaxial growth of GaAs1-XNX with dispersive nitrogen source Wang SZ, Yoon SF, Ng TK, Loke WK, Fan WJ
95 - 103	Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate Song JS, Chang JH, Hong SK, Cho MW, Makino H, Hanada T, Yao T
104 - 108	Distinct growth behaviours in molecular-beam epitaxy of (In,Ga)As on GaAs(311)A substrate Gong Q, Notzel R, Wolter JH, Schonherr HP, Ploog KH
109 - 115	Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy Sun ZZ, Yoon SF, Yew KC, Loke WK, Wang SZ, Ng TK
116 - 123	Epitaxial growth of AlN on sapphire (0001) by sputtering: a structural, morphological and optical study Huttel Y, Gomez H, Cebollada A, Armelles G, Alonso MI
124 - 128	Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD Zheng XH, Feng ZH, Wang YT, Zheng WL, Jia QJ, Jiang XM, Yang H, Liang JW
129 - 131	Crystal growth and characterization of deuterated ammonium dehydrogen phosphate (DADP) Su GB, Zhuang XX, He YP, Li ZD, Li GH, Ma JB
132 - 140	Study of narrow InGaP/(In)GaAs quantum wells Kudela R, Kucera M, Novak J, Ferrari C, Pelosi C
141 - 154	Compositional control in molecular beam epitaxy growth of GaNyAs1-y on GaAs (001) using an Ar/N-2 RF plasma Gupta JA, Wasilewski ZR, Riel BJ, Ramsey J, Aers GC, Williams RL, Sproule GI, Perovic A, Perovic DD, Garanzotis T, SpringThorpe AJ
155 - 160	Net acceptor concentration in ZnSe : Sb grown from vapor phase Prokesch M, Irmscher K, Rinas U, Makino H, Yao T
161 - 166	Crystal growth of La2CuO4 and La2-xBaxCuO4 by the travelling-solvent floating zone method Yan XL, Zhou JF, Niu XJ, Chen XL, Tu QY, Wu X
167 - 171	Structure and growth of pure and Ce3+-doped Li6Gd(BO3)(3) single crystals Shekhovtsov AN, Tolmachev AV, Dubovik MF, Dolzhenkova EF, Korshikova TI, Grinyov BV, Baumer VN, Zelenskaya OV
172 - 176	The fabrication and characteristics of (Ba0.5Sr0.5)TiO3 thin films prepared by pulsed laser deposition Yang GA, Gu HS, Zhu J, Wang YQ
177 - 182	Control of the facet plane formation on solid-liquid interface of LGS Sato H, Kumatoriya M, Fujii T
183 - 188	Growth and defects of Nd : GdVO4 single crystal Qin LJ, Meng XL, Zhang JG, Zhu L, Zhang HJ, Xu BC, Jiang HD
189 - 198	Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on alpha-Al2O3 substrates Aarik J, Aidla A, Mandar H, Uustare T, Schuisky M, Harsta A
199 - 208	AFM observation of the surface morphology and impurity effects on orthorhombic hen egg-white lysozyme crystals Matsuzuki Y, Kubota T, Liu XY, Ataka M, Takano KJ
209 - 214	Growth, characterization and nonlinear optical property of chalcone derivative Indira J, Karat PP, Sarojini BK
215 - 228	On the nature of supersaturation barriers observed during the growth of crystals from aqueous solutions containing impurities Sangwal K
229 - 232	Synthesize AlN nanocrystals in organic solvent at atmospheric pressure Hao XP, Yu MY, Cui DL, Xu XG, Bai YJ, Wang QL, Jiang MH
233 - 238	The overgrowth of calcium carbonate hexahydrate on new functionalized polymers Malkaj P, Chrissanthopoulos A, Dalas E
239 - 244	The modulation of collagen on crystal morphology of calcium carbonate Shen FH, Feng QL, Wang CM
245 - 252	Effect of solvents on the growth morphology and physical characteristics of nonlinear optical gamma-glycine crystals Bhat MN, Dharmaprakash SM
253 - 257	Temperature effect of carbon nanotube-confined reaction Tang C, Ding XX, Gan ZW, Huang XT, Gao JM, Liu W, Qi SR